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zene r diode chips fo r esd p r otection WT-Z106P-AU4-14 1. featu r e: 2. structu r e: 3. size: 4. electrical characteristics ( t a=25oc) 5. drawing: 2-1 p lanar t ype: sili c on diode 3-1. * chip si z e : 6.88 mils x 6.88 mils (175m x 17.5m ). 3-2. chip thic k ness : 3.3 0.6 mils (85 15m ). 3-3. a c ti v e a r ea : 4.1 mils x 4.1 mils (105m x 105m). 3-4. b onding pad : 4.5 mils x 4.5 mils (115m x 115m) . 3-5. p a t t e r n d r a wing : r e f er t o the a ttached d r a win g . * i ncluding sc r ibing lin e . t he chip si z e is about 5.9mil(0.150mm) a f t er dicin g . 2-2 ele c t r odes: t op side:gold pad ( anode). back side: g old l a y er ( c a thode). parameter symbol condition min. typ. max. unit zener voltage reverse leakage v r =10v 100 na 12.5 - - - - - - - 15.5 v current i f = 20m a 1.2 v electrostatic discharge esd 8.0 kv top side n - sub p bonding pa d back side weitron technolog y co., l td. tel:886-2-29148158 fax:886-2-29106796 http://www.weitron.com.tw 20-jul-07 i z =5ma hbm mil-std 883 forward voltage i r v z v f 1-1 silicon zener diode chips for electrostatic discharge(esd) protection application 1-2 this specication applies to p-type silicon zener diode chipdevice no:WT-Z106P-AU4-14
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