for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 16 hmc383lc4 gaas phemt mmic medium power amplifier, 12 - 30 ghz v04.1208 general description features functional diagram the hmc383lc4 is a general purpose gaas phemt mmic driver ampli er housed in a leadless rohs compliant smt package. the ampli er provides 15 db of gain and +18 dbm of saturated power from a single +5v supply. consistent gain and output power across the operating band make it possible to use a com- mon driver/lo ampli er approach in multiple radio bands. the rf i/os are dc blocked and matched to 50 ohms for ease of use. the hmc383lc4 is housed in a rohs compliant leadless 4x4 mm package allow- ing the use of surface mount manufacturing tech- niques. gain: 15 db saturated output power: +18 dbm output ip3: +25 dbm single positive supply: +5v @ 100 ma 50 ohm matched input/output rohs compliant 4x4 mm package electrical speci cations, t a = +25 c, vdd = +5v typical applications the hmc383lc4 is ideal for: ? point-to-point radios ? point-to-multi-point radios & vsat ? test equipment & sensors ? lo driver for hmc mixers ? military & space parameter min. typ. max. min. typ. max. min. typ. max. min. typ. max. units frequency range 12 - 16 16 -24 24 - 28 28 - 30 ghz gain 12 15 13 16 12 15 10 13 db gain variation over temperature 0.02 0.03 0.02 0.03 0.02 0.03 0.02 0.03 db/ c input return loss 14 14 11 13 db output return loss 14 17 10 8 db output power for 1 db compression (p1db) 12 15 13.5 16.5 13 16 12 15 dbm saturated output power (psat) 17 18 17 16 dbm output third order intercept (ip3) 24 25 25 23 dbm noise figure 10.5 8 7.5 8 db supply current (idd) 75 100 135 75 100 135 75 100 135 75 100 135 ma
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 17 input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature p1db vs. temperature psat vs. temperature -20 -10 0 10 20 8 121620242832 s21 s11 s22 response (db) frequency (ghz) -20 -15 -10 -5 0 12 14 16 18 20 22 24 26 28 30 +25c +85c -40c return loss (db) frequency (ghz) -20 -15 -10 -5 0 12 14 16 18 20 22 24 26 28 30 +25c +85c -40c return loss (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 12 14 16 18 20 22 24 26 28 30 +25c +85c -40c psat (dbm) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 12 14 16 18 20 22 24 26 28 30 +25c +85c -40c p1db (dbm) frequency (ghz) 0 4 8 12 16 20 12 14 16 18 20 22 24 26 28 30 +25c +85c -40c gain (db) frequency (ghz) hmc383lc4 gaas phemt mmic medium power amplifier, 12 - 30 ghz v04.1208
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 18 power compression @ 18 ghz output ip3 vs. temperature noise figure vs. temperature gain & power vs. supply voltage @ 18 ghz reverse isolation vs. temperature power compression @ 30 ghz 0 2 4 6 8 10 12 14 16 18 20 -16-14-12-10-8-6-4-202468 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 12 14 16 18 20 22 24 26 28 30 +25c +85c -40c noise figure (db) frequency (ghz) 10 14 18 22 26 30 12 15 18 21 24 27 30 +25c +85c -40c ip3 (dbm) frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 12 14 16 18 20 22 24 26 28 30 +25c +85c -40c isolation (db) frequency (ghz) 14 15 16 17 18 19 4.5 5 5.5 gain p1db psat gain (db), p1db (dbm), psat (dbm) vdd supply voltage (vdc) 0 2 4 6 8 10 12 14 16 18 20 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) hmc383lc4 gaas phemt mmic medium power amplifier, 12 - 30 ghz v04.1208
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 19 absolute maximum ratings drain bias voltage (vdd) +5.5 vdc rf input power (rfin)(vdd = +5vdc) +10 dbm channel temperature 175 c continuous pdiss (t= 85 c) (derate 10 mw/c above 85 c) 0.92 w thermal resistance (channel to ground paddle) 98 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c esd sensitivity (hbm) class 1a vdd (v) idd (ma) +4.5 99 +5.0 100 +5.5 101 typical supply current vs. vdd note: ampli er will operate over full voltage ranges shown above electrostatic sensitive device observe handling precautions outline drawing notes: 1. package body material: alumina 2. lead and ground paddle plating: 30-80 microinches gold over 50 microinches minimum nickel. 3. all dimensions are in inches [mm] 4. lead spacing tolerance is non-cumulative 5. package warp shall not exceed 0.05mm datum -c- 6. all ground leads and ground paddle must be soldered to pcb rf ground hmc383lc4 gaas phemt mmic medium power amplifier, 12 - 30 ghz v04.1208
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 20 pin descriptions pin number function description interface schematic 1, 2, 4-15, 17, 18, 20-24 n/c no connection required. these pins may be connected to rf/dc ground without affecting performance if using grounded coplanar wave guide transmission lines. 3rfin this pad is ac coupled and matched to 50 ohms. 16 rfout this pad is ac coupled and matched to 50 ohms. 19 vdd power supply voltage for the ampli er. external bypass capacitors of 100 pf, 1,000 pf and 2.2 f are required. gnd package base has an exposed metal ground that must be connected to rf/dc ground. vias under the device are required application circuit component value c1 100 pf c2 1,000 pf c3 2.2 f hmc383lc4 gaas phemt mmic medium power amplifier, 12 - 30 ghz v04.1208
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 21 evaluation pcb item description j1, j2 2.92 mm pcb mount k-connector j3, j4 dc pin c1 100 pf capacitor, 0402 pkg. c2 1,000 pf capacitor, 0603 pkg. c3 2.2f capacitor, tantalum u1 hmc383lc4 ampli er pcb [2] 108535 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350. list of materials for evaluation pcb 122198 [1] the circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro- priate heat sink. the evaluation circuit board shown is available from hittite upon request. hmc383lc4 gaas phemt mmic medium power amplifier, 12 - 30 ghz v04.1208
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