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r07ds0562ej0100 rev.1.00 page 1 of 6 nov 07, 2011 preliminary data sheet np89n04puk mos field effect transistor description the np89n04puk is n-channel mos field effect transistor designed for high current switching applications. features ? super low on-state resistance r ds(on) = 2.95 m ? max. (v gs = 10 v, i d = 45 a) ? low c iss : c iss = 3900 pf typ. (v ds = 25 v) ? designed for automotive application and aec-q101 qualified ordering information part no. lead plating packing package NP89N04PUK-E1-AY * 1 taping (e1 type) np89n04puk-e2-ay * 1 pure sn (tin) tape 800 p/reel taping (e2 type) to-263 (mp-25zp) note: * 1 pb-free (this product does not contain pb in the external electrode) absolute maximum ratings (t a = 25c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss 40 v gate to source voltage (v ds = 0 v) v gss ? 20 v drain current (dc) (t c = 25c) i d(dc) ? 90 a drain current (pulse) * 1 i d(pulse) ? 360 a total power dissipation (t c = 25c) p t1 147 w total power dissipation (t a = 25c) p t2 1.8 w channel temperature t ch 175 c storage temperature t stg ?55 to 175 c repetitive avalanche current * 2 i ar 37 a repetitive avalanche energy * 2 e ar 136 mj notes: *1 t c = 25c, p w ? 10 ? s, duty cycle ? 1% *2 r g = 25 ? , v gs = 20 ? 0 v thermal resistance channel to case thermal resistance r th(ch-c) 1.02 c/w channel to ambient thermal resistance r th(ch-a) 83.3 c/w r07ds0562ej0100 rev.1.00 nov 07, 2011
np89n04puk r07ds0562ej0100 rev.1.00 page 2 of 6 nov 07, 2011 electrical characteristics (t a = 25c) item symbol min. typ. max. unit test conditions zero gate voltage drain current i dss ? ? 1 ? a v ds = 40 v, v gs = 0 v gate leakage current i gss ? ? ? 100 na v gs = ? 20 v, v ds = 0 v gate to source threshold voltage v gs(th) 2.0 3.0 4.0 v v ds = v gs , i d = 250 ? a forward transfer admittance * 1 | y fs | 30 60 ? s v ds = 5 v, i d = 45 a drain to source on-state resistance * 1 r ds(on) ? 2.45 2.95 m ? v gs = 10 v, i d = 45 a input capacitance c iss ? 3900 5850 pf output capacitance c oss ? 530 800 pf reverse transfer capacitance c rss ? 200 360 pf v ds = 25 v v gs = 0 v f = 1 mhz turn-on delay time t d(on) ? 25 60 ns rise time t r ? 12 30 ns turn-off delay time t d(off) ? 65 130 ns fall time t f ? 8 20 ns v dd = 20 v, i d = 45 a v gs = 10 v r g = 0 ? total gate charge q g ? 68 102 nc gate to source charge q gs ? 18 ? nc gate to drain charge q gd ? 18 ? nc v dd = 32 v v gs = 10 v i d = 90 a body diode forward voltage * 1 v f(s-d) ? 0.9 1.5 v i f = 90 a, v gs = 0 v reverse recovery time t rr ? 47 ? ns reverse recovery charge q rr ? 68 ? nc i f = 90 a, v gs = 0 v di/dt = 100 a/ ? s note: * 1 pulsed test test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 duty cycle 1% = 1 s v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10% np89n04puk r07ds0562ej0100 rev.1.00 page 3 of 6 nov 07, 2011 typical characteristics (t a = 25c) derating factor of forward bias safe operating area 0 20 40 60 80 100 120 dt - percentage of rated power - % 0 25 50 75 100 125 150 175 t c - case temperature - c 0.1 m 1 m 10 m 100 m 1 10 100 1000 pw - pulse width - s total power dissipation vs. case temperature 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power disslpation - w forward bias safe operating area 0.1 1 10 100 1000 0.1 1 10 100 v ds - drain to source voltage - v i d - drain current - a power dissipation limited secondary breakdown limited dc pw = 10 ms pw = 1 ms pw = 100 s i d(dc) = 90 a i d(pulse) = 360 a r ds(on) limited (v gs =10 v) t c = 25c single pulse transient thermal resistance vs. pulse width 0.01 0.1 1 10 100 1000 r th(t) - transient thermal resistance - c/w single pulse r th(ch-c) = 1.02c/w r th(ch-a) = 83.3c/w np89n04puk r07ds0562ej0100 rev.1.00 page 4 of 6 nov 07, 2011 forward transfer characteristics 0.001 0.01 0.1 1 10 100 0123456 v gs - gate to source voltage - v i d - drain curent - a gate to source threshold voltage vs. channel temperature 0 1 2 3 4 ?100 ?50 0 50 100 150 200 t ch - channel temperature - c v gs(th) - gate to source threshold voltage - v forward transfer admittance vs. drain current 1 10 100 0.1 1 10 100 i d - drain current - a |y fs | - forward transfer admittance - s drain to source on-state resistance vs. drain current 0 2 4 6 1 3 5 1 10 100 1000 i d - drain current - a r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. gate to source voltage 0 5 10 15 20 v gs - gate to source voltage - v drain current vs. drain to source voltage 0 50 100 150 200 250 300 350 400 0 0.2 0.4 0.6 0.8 1.0 v ds - drain to source voltage - v i d - drain current - a v gs = 10 v pulsed v ds = 10 v pulsed t a = ?55c 25c 85c 150c 175c v ds = v gs i d = 250 a v ds = 5 v pulsed 0 2 4 6 1 3 5 r ds(on) - drain to source on-state resistance - m v gs = 10 v pulsed i d = 45 a pulsed t a = ?55c 25c 85c 150c 175c np89n04puk r07ds0562ej0100 rev.1.00 page 5 of 6 nov 07, 2011 capacitance vs. drain to source voltage 100 1000 10000 0.1 1 10 100 v ds - drain to source voltage - v c iss , c oss , c rss - capacitance -pf reverse recovery time vs. drain current 1 10 100 0.1 1 10 100 i f - drain current - a t rr - reverse recovery time - ns switching characteristics 1 10 100 1000 0.1 1 10 100 i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns dynamic input/output characteristics 0 5 10 15 20 25 30 35 0 1020304050607080 q g - gate charge - nc v ds - drain to source voltage - v 0 2 4 6 8 10 12 14 v gs - gate to source voltage - v source to drain diode forward voltage 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1.0 1.4 1.2 v f(s-d) - source to drain voltage - v i f - diode forward current - a drain to source on-state resistance vs. channel temperature ?100 ?50 0 50 100 150 200 t ch - channel temperature - c di/dt = 100 a/s v gs = 0 v v dd = 20 v v gs = 10 v r g = 0 v gs = 10 v v gs = 0 v pulsed 0 2 4 6 1 3 5 r ds(on) - drain to source on-state resistance - m v gs = 10 v i d = 45 a pulsed v gs = 0 v f = 1 mhz c iss c oss c rss t d(off) t d(on) t r t f v dd = 32 v 20 v 8 v v gs v ds i d = 90 a np89n04puk r07ds0562ej0100 rev.1.00 page 6 of 6 nov 07, 2011 package drawing (unit: mm) to-263 (mp-25zp) (mass: 1.5 g typ.) no plating 7.88 min. 2.54 0.75 0.2 0.5 9.15 0.3 8.0 typ. 2.54 0.25 15.25 0.5 1.35 0.3 2 13 4 2.5 4.45 0.2 1.3 0.2 0.6 0.2 0 to 8 1. gate 2. drain 3. source 4. fin (drain) 0.025 to 0.25 0.25 10.0 0.3 equivalent circuit source body diode gate drain remark: strong electric field, when exposed to this device, can cause destructi on of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly diss ipate it once, when it has occurred. all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history np89 n04puk data sheet description rev. date page summary 1.00 nov 07, 2011 ? 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