2008-06-03 rev. 2.3 page 1 sdt12s60sdt12s60 thinq! ? sic schottky diode silicon carbide schottky diode ? worlds first 600v schottky diode ? revolutionary semiconductor material - silicon carbide ? switching behavior benchmark ? no reverse recovery ? no temperature influence on the switching behavior ? no forward recovery product summary v rrm 600 v q c 30 nc i f 12 a pg-to220-2-2. pin 1 pin 2 c a type package ordering code sdt12s60 pg-to220-2-2. q67040-s4470 marking d12s60 maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous forward current, t c =100c i f 12 a rms forward current , f =50 hz i frms 17 surge non repetitive forward current, sine halfwave t c =25c, t p =10ms i fsm 36 repetitive peak forward current t j =150c, t c =100c, d =0.1 i frm 49 non repetitive peak forward current t p =10s, t c =25c i fmax 120 i 2 t value , t c =25c, t p =10ms i 2 d t 6.48 a2s repetitive peak reverse voltage v rrm 600 v surge peak reverse voltage v rsm 600 power dissipation , t c =25c p tot 88.2 w operating and storage temperature t j , t stg -55... +175 c
2008-06-03 rev. 2.3 page 2 sdt12s60sdt12s60 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 1.7 k/w thermal resistance, junction - ambient, leaded r thja - - 62 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics diode forward voltage i f =12a, t j =25c i f =12a, t j =150c v f - - 1.5 1.7 1.7 2.1 v reverse current v r =600v, t j =25c v r =600v, t j =150c i r - - 40 100 400 2000 a
2008-06-03 rev. 2.3 page 3 sdt12s60sdt12s60 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics total capacitive charge v r =400v, i f =12a, d i f /d t =200a/s, t j =150c q c - 30 - nc switching time v r =400v, i f =12a, d i f /d t =200a/s, t j =150c t rr - n.a. - ns total capacitance v r =1v, t c =25c, f =1mhz v r =300v, t c =25c, f =1mhz v r =600v, t c =25c, f =1mhz c - - - 450 45 43 - - - pf
2008-06-03 rev. 2.3 page 4 sdt12s60sdt12s60 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 c 180 t c 0 10 20 30 40 50 60 70 w 90 p tot 2 diode forward current i f = f ( t c ) parameter: t j 175 c 0 20 40 60 80 100 120 140 c 180 t c 0 2 4 6 8 10 12 14 16 18 20 a 24 i f 4 typ. forward power dissipation vs. average forward current p f(av) = f ( i f ) t c =100c, d = t p / t 0 2 4 6 8 10 12 a 16 i f(av) 0 4 8 12 16 20 24 28 32 36 w 44 p f(av) d=0.1 d=0.2 d=0.5 d=1 3 typ. forward characteristic i f = f ( v f ) parameter: t j , t p = 350 s 0 0.5 1 1.5 v 2.5 v f 0 4 8 12 16 a 24 i f 150c 125c 100c 25c -40c
2008-06-03 rev. 2.3 page 5 sdt12s60sdt12s60 5 typ. reverse current vs. reverse voltage i r = f ( v r ) 100 150 200 250 300 350 400 450 500 v 600 v r -3 10 -2 10 -1 10 0 10 1 10 2 10 a i r 150c 125c 100c 25c 6 transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w sdt12s60 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 7 typ. capacitance vs. reverse voltage c = f ( v r ) parameter: t c = 25 c, f = 1 mhz 10 0 10 1 10 2 10 3 v v r 0 50 100 150 200 250 300 350 400 450 500 pf 600 c 8 typ. c stored energy e c = f ( v r ) 0 100 200 300 400 v 600 v r 0 1 2 3 4 5 6 7 j 9 e c
2008-06-03 rev. 2.3 page 6 sdt12s60sdt12s60 9 typ. capacitive charge vs. current slop e q c = f ( d i f /d t ) parameter: t j = 150 c 100 200 300 400 500 600 700 800 a/s 1000 d i f /d t 0 4 8 12 16 20 24 28 32 nc 40 q c i f *2 i f *0.5 i f
2008-06-03 rev. 2.3 page 7 sdt12s60sdt12s60 pg-to-220-2-2
2008-06-03 rev. 2.3 page 8 sdt12s60sdt12s60
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