skr 10,3 qu bond ? by semikron rev. 0 ? 22.09.2009 1 diode skr i f(dc) = 170 a v rrm = 1600 v size: 10,3 mm x 10,3 mm skr 10,3 qu bond features ? high current density due to mesa technology ? high surge current ? compatible to thick wire bonding ? compatible to all standard solder processes typical applications ? uncontrolled rectifier bridges absolute maximum ratings symbol conditions values unit v rrm t j =25c, i r =0.1ma 1600 v i f(av) t s =80c, t j = 150 c 135 a i 2 t t j = 150 c, 10 ms, sin 180 13613 a 2 s i fsm 10 ms sin 180 t j =25c 2000 a t j = 150 c 1650 a t jmax 150 c electrical char acteristics symbol conditions min. typ. max. unit i r t j =25c, v rrm 0.1 ma t j = 145 c, v rrm 1.1 ma v f t j =25c, i f = 106 a 11.21v t j = 125 c, i f = 106 a 0.9 1.1 v v (to) t j = 125 c 0.83 v r t t j = 125 c 1.6 m ? t rr t j =25c, 1a 29 s thermal characteristics symbol conditions min. typ. max. unit t j -40 150 c t stg -40 150 c t solder 10 min. 250 c t solder 5 min. 320 c r th(j-s) soldered on 0,38 mm dcb, reference point on copper heatsink close to the chip 0.38 k/w mechanical characteristics symbol conditions values unit raster size 10,3 x 10,3 mm area total 106,09 mm 2 anode bondable (al) cathode solderable (ag/ni) wire bond al, diameter 500 m package wafer frame chips / package 128 pcs
skr 10,3 qu bond 2 rev. 0 ? 22.09.2009 ? by semikron this technical information specifies semiconductor devices. no warranty or guarantee expressed or implied is made regarding del ivery, performance or suitability.
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