? semiconductor components industries, llc, 2006 may, 2006 ? rev.6 1 publication order number: 2n6027/d 2n6027, 2n6028 preferred device programmable unijunction transistor programmable unijunction transistor triggers designed to enable the engineer to ?program?? unijunction characteristics such as r bb , , i v , and i p by merely selecting two resistor values. application includes thyristor?trigger, oscillator, pulse and timing circuits. these devices may also be used in special thyristor applications due to the availability of an anode gate. supplied in an inexpensive to?92 plastic package for high?volume requirements, this package is readily adaptable for use in automatic insertion equipment. features ? programmable ? r bb , , i v and i p ? low on?state voltage ? 1.5 v maximum @ i f = 50 ma ? low gate to anode leakage current ? 10 na maximum ? high peak output vo ltage ? 11 v typical ? low offset voltage ? 0.35 v typical (r g = 10 k ) ? pb?free packages are available* *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. puts 40 volts, 300 mw preferred devices are recommended choices for future use and best overall value. see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information k g a to?92 (to?226aa) case 029 style 16 3 2 1 pin assignment 1 2 3 gate cathode anode http://onsemi.com 2n602x = device code x = 7 or 8 a = assembly location y = year ww = work week = pb?free package marking diagram 2n 602x ayww (note: microdot may be in either location)
2n6027, 2n6028 http://onsemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit power dissipation* derate above 25 c p f 1/ ja 300 4.0 mw mw/ c dc forward anode current* derate above 25 c i t 150 2.67 ma ma/ c dc gate current* i g 50 ma repetitive peak forward current 100 s pulse width, 1% duty cycle 20 s pulse width, 1% duty cycle* i trm 1.0 2.0 a non?repetitive peak forward current 10 s pulse width i tsm 5.0 a gate to cathode forward voltage* v gkf 40 v gate to cathode reverse voltage* v gkr 5.0 v gate to anode reverse voltage* v gar 40 v anode to cathode voltage* (note 1) v ak 40 v capacitive discharge energy (note 2) e 250 j power dissipation (note 3) p d 300 mw operating temperature t opr ?50 to +100 c junction temperature t j ?50 to +125 c storage temperature range t stg ?55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. *indicates jedec registered data 1. anode positive, r ga = 1000 anode negative, r ga = open 2. e = 0.5 cv 2 capacitor discharge energy limiting resistor and repetition. 3. derate current and power above 25 c. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 75 c/w thermal resistance, junction?to?ambient r ja 200 c/w maximum lead temperature for soldering purposes ( 1/16 from case, 10 seconds maximum) t l 260 c
2n6027, 2n6028 http://onsemi.com 3 electrical characteristics (t c = 25 c unless otherwise noted) characteristic fig. no. symbol min typ max unit peak current* (v s = 10 vdc, r g = 1 m ) 2n6027 2n6028 (v s = 10 vdc, r g = 10 k ) 2n6027 2n6028 2,9,11 i p ? ? ? ? 1.25 0.08 4.0 0.70 2.0 0.15 5.0 1.0 a offset voltage* (v s = 10 vdc, r g = 1 m ) 2n6027 2n6028 (v s = 10 vdc, r g = 10 k ) (both types) 1 v t 0.2 0.2 0.2 0.70 0.50 0.35 1.6 0.6 0.6 v valley current* (v s = 10 vdc, r g = 1 m ) 2n6027 2n6028 (v s = 10 vdc, r g = 10 k ) 2n6027 2n6028 (v s = 10 vdc, r g = 200 ) 2n6027 2n6028 1,4,5 i v ? ? 70 25 1.5 1.0 18 18 150 150 ? ? 50 25 ? ? ? ? a ma gate to a node leakage current* (v s = 40 vdc, t a = 25 c, cathode open) (v s = 40 vdc, t a = 75 c, cathode open) ? i gao ? ? 1.0 3.0 10 ? nadc gate to cat hode leakage current (v s = 40 vdc, anode to cathode shorted) ? i gks ? 5.0 50 nadc forward voltage* (i f = 50 ma peak) (note 4) 1,6 v f ? 0.8 1.5 v peak output voltage* (v g = 20 vdc, c c = 0.2 f) 3,7 v o 6.0 11 ? v pulse voltage rise time (v b = 20 vdc, c c = 0.2 f) 3 t r ? 40 80 ns *indicates jedec registered data 4. pulse test: pulse width 300 s, duty cycle 2%. k g a programmable unijunction with program" resistors r1 and r2 1a ? v ak +v b i a r1 r1 + r2 r1 r2 ? v s = v b v ak i a + v s r g r g = r1 r2 r1 + r2 equivalent test circuit for figure 1a used for electrical characteristics testing (also see figure 2) 1b ? adjust for turn?on threshold 100 k 1.0% 2n5270 v b 0.01 f 20 r r r g = r/2 v s = v b/2 (see figure 1) + ? i p (sense) 100 v = 1.0 na scope put under test c c 510 k 16 k 27 k 20 v o +v b +v v o 6.0 v 0.6 v t f t ic ? electrical characteristics v a v s v f v v ?v p i a i f i v i p v t = v p ? v s i gao figure 1. electrical characterization figure 2. peak current (i p ) test circuit figure 3. v o and t r test circuit
2n6027, 2n6028 http://onsemi.com 4 v s , supply voltage (v) t a , ambient temperature ( c) i , valley current ( a) v 100 10 1000 10 51520 500 5 10 0 ?50 +50 +100 100 r g = 10 k 100 k 1 m ?25 +25 +75 r g = 10 k 100 k 1 m typical valley current behavior i f , peak forward current (amp) v s , supply voltage (v) 0.1 0.05 0.02 0.01 0.2 0.5 1.0 0.02 0.01 0.05 0.1 10 20 5.0 0 15 10 02030 25 t a = 25 c 5.0 15 25 c c = 0.2 f 1000 pf v , peak output voltage (v) o t a = 25 c (see figure 3) i , valley current ( a) v 2.0 5.0 10 0.2 2.0 0.5 1.0 5.0 35 40 a k g k a g e p n n p circuit symbol b2 b1 r 1 r 2 r1 r1 + r2 r bb = r1 + r2 = equivalent circuit with external program" resistors r1 and r2 typical application c c r t k a g r 2 r 1 + figure 4. effect of supply voltage figure 5. effect of temperature figure 6. forward voltage figure 7. peak output voltage figure 8. programmable unijunction v p , peak forward voltage (v)
2n6027, 2n6028 http://onsemi.com 5 v s , supply voltage (v) t a , ambient temperature ( c) i , peak current ( a) p 1.0 0.5 0.3 0.2 0.1 2.0 3.0 5.0 10 10 5.0 15 20 1.0 0.5 20 0.2 0.1 2.0 50 5.0 10 0 ?50 +50 +100 100 t a = 25 c (see figure 2) r g = 10 k 100 k v s = 10 v (see figure 2) 1.0 m ?25 +25 +75 r g = 10 k 100 k 1.0 m i , peak current ( a) p typical peak current behavior 2n6027 v s , supply voltage (v) t a , ambient temperature ( c) i , peak current ( a) p 0.1 0.05 0.03 0.02 0.01 0.2 0.3 0.5 1.0 10 5.0 15 20 0.1 0.05 2.0 0.02 0.01 0.2 5.0 0.5 1.0 0 ?50 +50 +100 10 t a = 25 c (see figure 2) r g = 10 k 100 k v s = 10 v (see figure 2) 1.0 m ?25 +25 +75 r g = 10 k 100 k 1.0 m i , peak current ( a) p 2n6028 0.07 0.7 figure 9. effect of supply voltage and r g figure 10. effect of temperature and r g figure 11. effect of supply voltage and r g figure 12. effect of temperature and r g ordering information u.s. european equivalent shipping ? description of to?92 tape orientation 2n6027 2N6027RL1 2N6027RL1g 5000 units / box n/a ? bulk 2n6027g 2n6028 2n6028g 2n6027rlra 2000 / tape & reel round side of to?92 and adhesive tape visible 2n6027rlrag 2n6028rlra 2n6028rlrag 2n6028rlrm 2000 / tape & ammo box flat side of to?92 and adhesive tape visible 2n6028rlrmg 2n6028rlrp round side of to?92 and adhesive tape visible 2n6028rlrpg ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *the ?g?? suffix indicates pb?free package available.
2n6027, 2n6028 http://onsemi.com 6 package dimensions to?92 (to?226aa) case 029?11 issue al style 16: pin 1. anode 2. gate 3. cathode notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 ??? 12.70 ??? l 0.250 ??? 6.35 ??? n 0.080 0.105 2.04 2.66 p ??? 0.100 ??? 2.54 r 0.115 ??? 2.93 ??? v 0.135 ??? 3.43 ??? 1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5773?3850 2n6027/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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