jfets switching nchannel depletion maximum ratings rating symbol value unit drainsource voltage v ds 30 vdc draingate voltage v dg 30 vdc gatesource voltage v gs 30 vdc forward gate current i g(f) 50 madc total device dissipation @ t a = 25 c derate above 25 c p d 350 2.8 mw mw/ c operating and storage channel temperature range t channel , t stg 65 to +150 c electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics gatesource breakdown voltage (i g = 1.0 m adc, v ds = 0) v (br)gss 30 vdc gate reverse current (v gs = 15 vdc, v ds = 0) (v gs = 15 vdc, v ds = 0, t a = 100 c) i gss 1.0 0.2 nadc m adc draincutoff current (v ds = 15 vdc, v gs = 12 vdc) (v ds = 15 vdc, v gs = 12 vdc, t a = 100 c) i d(off) 1.0 0.1 nadc m adc gate source voltage (v ds = 15 vdc, i d = 10 nadc) mpf4392 mpf4393 v gs 2.0 0.5 5.0 3.0 vdc on characteristics zerogatevoltage drain current (1) (v ds = 15 vdc, v gs = 0) mpf4392 mpf4393 i dss 25 5.0 75 30 madc drainsource onvoltage (i d = 6.0 madc, v gs = 0) mpf4392 (i d = 3.0 madc, v gs = 0) mpf4393 v ds(on) 0.4 0.4 vdc static drainsource on resistance (i d = 1.0 madc, v gs = 0) mpf4392 mpf4393 r ds(on) 60 100 w smallsignal characteristics forward transfer admittance (v ds = 15 vdc, i d = 25 madc, f = 1.0 khz) mpf4392 (v ds = 15 vdc, i d = 5.0 madc, f = 1.0 khz) mpf4393 |y fs | 17 12 mmhos 1. pulse test: pulse width 300 m s, duty cycle 3.0%. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 november, 2001 rev. 3 1 publication order number: mpf4392/d mpf4392 mpf4393 case 2911, style 5 to92 (to226aa) 1 2 3 on semiconductors preferred devices 1 drain 2 source 3 gate
mpf4392 mpf4393 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit smallsignal characteristics (continued) drainsource aono resistance (v gs = 0, i d = 0, f = 1.0 khz) mpf4392 mpf4393 r ds(on) 60 100 w input capacitance (v gs = 15 vdc, v ds = 0, f = 1.0 mhz) c iss 6.0 10 pf reverse transfer capacitance (v gs = 12 vdc, v ds = 0, f = 1.0 mhz) (v ds = 15 vdc, i d = 10 madc, f = 1.0 mhz) c rss 2.5 3.2 3.5 pf switching characteristics rise time (see figure 2) (i d(on) = 6.0 madc) mpf4392 (i d(on) = 3.0 madc) mpf4393 t r 2.0 2.5 5.0 5.0 ns fall time (see figure 4) (v gs(off) = 7.0 vdc) mpf4392 (v gs(off) = 5.0 vdc) mpf4393 t f 15 29 20 35 ns turnon time (see figures 1 and 2) (i d(on) = 6.0 madc) mpf4392 (i d(on) = 3.0 madc) mpf4393 t on 4.0 6.5 15 15 ns turnoff time (see figures 3 and 4) (v gs(off) = 7.0 vdc) mpf4392 (v gs(off) = 5.0 vdc) mpf4393 t off 20 37 35 55 ns
mpf4392 mpf4393 http://onsemi.com 3 figure 1. turnon delay time figure 2. rise time figure 3. turnoff delay time figure 4. fall time typical switching characteristics i d , drain current (ma) , turn-on delay time (ns) d(on) t 5.0 2.0 20 10 0.5 1.0 3.0 7.0 5.0 1.0 50 100 0.7 2.0 10 20 , rise time (ns) r t , turn-off delay time (ns) d(off) t , fall time (ns) f t 30 50 200 500 1000 v gs(off) = 7.0 v = 5.0 v mpf4392 mpf4393 i d , drain current (ma) 5.0 2.0 20 10 0.5 1.0 3.0 7.0 5.0 1.0 50 100 0.7 2.0 10 20 30 50 200 500 1000 i d , drain current (ma) 5.0 2.0 20 10 0.5 1.0 3.0 7.0 5.0 1.0 50 100 0.7 2.0 10 20 30 50 200 500 1000 i d , drain current (ma) 5.0 2.0 20 10 0.5 1.0 3.0 7.0 5.0 1.0 50 100 0.7 2.0 10 20 30 50 200 500 1000 t j = 25 c t j = 25 c t j = 25 c t j = 25 c r k = r d r k = 0 r k = r d r k = 0 r k = r d r k = 0 r k = r d r k = 0 v gs(off) = 7.0 v = 5.0 v mpf4392 mpf4393 v gs(off) = 7.0 v = 5.0 v mpf4392 mpf4393 v gs(off) = 7.0 v = 5.0 v mpf4392 mpf4393
mpf4392 mpf4393 http://onsemi.com 4 figure 5. switching time test circuit 10 2.0 15 3.0 5.0 7.0 0.5 1.0 3.0 30 5.0 0.3 0.1 10 0.05 0.03 v r , reverse voltage (volts) c, capacitance (pf) 50 170 20 -10 -40 80 140 -70 r 1.8 1.0 2.0 1.2 1.4 1.6 0.8 0.6 0.4 , drain-source on-state ds(on) resistance (normalized) t channel , channel temperature ( c) 1.5 1.0 110 -v dd v gg r gg r t r gen 50 w v gen r k r d output input 50 w 50 w set v ds(off) = 10 v input pulse t r 0.25 ns t f 0.5 ns pulse width = 2.0 m s duty cycle 2.0% r gg r k r d = r d (r t + 50) r d + r t + 50 figure 6. typical forward transfer admittance note 1 the switching characteristics shown above were measured using a test circuit similar to figure 5. at the beginning of the switching in- terval, the gate voltage is at gate supply voltage (v gg ). the drainsource voltage (v ds ) is slightly lower than drain supply voltage (v dd ) due to the voltage divider. thus reverse transfer capacitance (c rss ) or gatedrain capacitance (c gd ) is charged to v gg + v ds . during the turnon interval, gatesource capacitance (c gs ) dis- charges through the series combination of r gen and r k . c gd must discharge to v ds(on) through r g and r k in series with the parallel combination of effective load impedance (r d ) and drainsource resistance (r ds ). during the turnoff, this charge flow is reversed. predicting turnon time is somewhat difficult as the channel re- sistance r ds is a function of the gatesource voltage. while c gs dis- charges, v gs approaches zero and r ds decreases. since c gd dis- charges through r ds , turnon time is nonlinear. during turnoff, the situation is reversed with r ds increasing as c gd charges. the above switching curves show two impedance conditions: 1) r k is equal to r d which simulates the switching behavior of cas- caded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) r k = 0 (low imped- ance) the driving source impedance is that of the generator. figure 7. typical capacitance i d , drain current (ma) 2.0 5.0 3.0 7.0 0.5 1.0 3.0 7.0 5.0 50 30 10 20 0.7 2.0 10 20 , forward transfer admittance (mmhos) fs y 80 120 160 200 1.0 3.0 5.0 2.0 v gs , gate-source voltage (volts) 4.0 0 40 6.0 7.0 8.0 0 r , drain-source on-state ds(on) resistance (ohms) t channel = 25 c (c ds is negligible) c gs t channel = 25 c v ds = 15 v figure 8. effect of gatesource voltage on drainsource resistance figure 9. effect of temperature on drainsource onstate resistance mpf4392 mpf4393 c gd i d = 1.0 ma v gs = 0 i dss = 10 ma 25 ma 50 ma 75 ma 100 ma 125 ma t channel = 25 c
mpf4392 mpf4393 http://onsemi.com 5 i dss , zero-gate voltage drain current (ma) , drain-source on-state ds(on) r 20 10 30 40 50 30 40 50 60 70 20 resistance (ohms) 0 10 0 1.0 2.0 3.0 4.0 5.0 , gate-source voltage gs v (volts) 6.0 7.0 8.0 9.0 10 70 60 80 90 100 80 90 100 110 120 130 140 150 note 2 the zerogatevoltage drain current (i dss ), is the princi- ple determinant of other jfet characteristics. figure 10 shows the relationship of gatesource off voltage (v gs(off) ) and drainsource on resistance (r ds(on) ) to i dss . most of the devices will be within 10% of the values shown in figure 10. this data will be useful in predicting the characteristic variations for a given part number. for example: unknown r ds(on) and v gs range for an mpf4392 the electrical characteristics table indicates that an mpf4392 has an i dss range of 25 to 75 ma. figure 10 shows r ds(on) = 52 ohms for i dss = 25 ma and 30 ohms for i dss = 75 ma. the corresponding v gs values are 2.2 volts and 4.8 volts. figure 10. effect of i dss on drainsource resistance and gatesource voltage t channel = 25 c r ds(on) @ v gs = 0 v gs(off)
mpf4392 mpf4393 http://onsemi.com 6 package dimensions case 2911 issue al to92 (to226) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1
mpf4392 mpf4393 http://onsemi.com 7 notes
mpf4392 mpf4393 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mpf4392/d thermal clad is a trademark of the bergquist company. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
|
