unisonic technologies co., ltd uf840 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2011 unisonic technologies co., ltd qw-r502-047,f 8a, 500v, 0.85 , n-channel power mosfet ? description the n-channel enhancement mode silicon gate power mosfet is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ? features * low r ds(on) =0.85 ? * single pulse avalanche energy rated * rugged - soa is power dissipation limited * fast switching speeds * linear transfer characteristics * high input impedance ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 uf840l-ta3-t uf840g-ta3-t to-220 g d s tube uf840l-tf1-t uf840g-tf1-t to-220f1 g d s tube UF840L-TF2-T uf840g-tf2-t to-220f2 g d s tube uf840l-tf3-t uf840g-tf3-t to-220f g d s tube uf840l-tq2-r uf840g-tq2-r to-263 g d s tape reel uf840l-tq2-t uf840g-tq2-t to-263 g d s tube note: pin assignment: g: gate d: drain s: source
uf840 power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-047,f ? absolute maximum ratings (t a = 25c, unless otherwise specified.) parameter symbol ratings unit drain to source voltage (t j =25c ~125c) v dss 500 v drain to gate voltage (r gs = 20k ? , t j =25c ~125c) v dgr 500 v gate to source voltage v gss 30 v drain current continuous i d 8.0 a pulsed i dm 32 a power dissipation (t c =25c) to-220 p d 134 w to-220f/to-220f1 44 to-220f2 46 to-263 134 single pulse avalanche energy e as 510 mj operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case to-220 jc 0.93 c/w to-220f/to-220f1 2.86 to-220f2 2.72 to-263 0.93 ? electrical specifications (t a =25c, unless otherwise specified.) parameter symbol test conditions min typ max unit drain-source breakdown voltage bv dss i d = 250 a, v gs = 0v 500 v gate threshold voltage v gs ( th ) v gs = v ds , i d = 250 a 2 4 v on-state drain current (note 1) i d ( on ) v ds > i d ( on ) x r ds ( on ) ma x , v gs = 10v 8 a drain-source leakage current i dss v ds = rated bv dss , v gs = 0v 25 a v ds =0.8xrated bv dss ,v gs =0v,t j = 125c 250 a gate-source leakage current i gss v gs = 30v 100 na static drain-source on-state resistance (note 1) r ds(on) i d = 4.4a, v gs = 10v 0.8 0.85 ? turn-on delay time t dly ( on ) v dd =250v, i d 8a, r g = 9.1 ? , r l =30 ? (note 2) 15 21 ns turn-off delay time t dly ( off ) 50 74 ns turn-on rise time t r 21 35 ns turn-off fall time t f 20 30 ns total gate charge q g ( tot ) v gs =10v, i d =8a,v ds =0.8 x rated bv dss i g(ref) =1.5ma (note 3) 42 63 nc gate-source charge q gs 7 nc gate-drain charge q gd 22 nc input capacitance c iss v ds = 25v, v gs = 0v, f = 1.0mhz 1225 pf output capacitance c oss 200 pf reverse transfer capacitance c rss 85 pf note : 1. pulse test: pulse width 300 s, duty cycle 2%. 2. mosfet switching times are essentia lly independent of o perating temperature. 3. gate charge is essentially i ndependent of operat ing temperature.
uf840 power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-047,f ? internal package inductance parameter symbol min typ max unit drain inductance measured from the contact scr ew on tab to center of die measured from the drain lead(6mm from package) to center of die l d 3.5 nh 4.5 nh source inductance measured from the source lead(6mm from header) to source bond pad l s 7.5 nh remark: modified mosfet symbol showing the internal devices inductances as below. ? source to drain diode specifications parameter symbol test conditions min typ max unit source to drain diode voltage(note 1) v sd t j = 25c, i sd = 8.0a, v gs = 0v 2 v continuous source to drain current i sd note 2 8 a pulse source to drain current i sdm 32 a reverse recovery time t r r t j = 25c, i sd = 8.0a, di sd /dt = 100a/ s 210 475 970 ns reverse recovery charge q rr t j = 25c, i sd = 8.0a, di sd /dt = 100a/ s 2 4.6 8.2 c notes: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. modified mosfet symbol showing the integral reverse p-n junction diode as below.
uf840 power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-047,f ? test circuits and waveforms unclamped energy test circuit unclamped energy waveforms switching time test circuit
uf840 power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-047,f ? test circuits and waveforms (cont.) t on t dly(on) t r 90% 10% 0 v ds t dly(off) t off t f 90% 10% 90% 50% 50% v gs 0 10% pulse width resistive switching waveforms gate charge test circuit gate charge waveforms
uf840 power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-047,f ? typical characteristics drain current, i d (a) normalized transient thermal impedance, z jc drain current, i d (a) drain current, i d (a)
uf840 power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-047,f ? typical characteristics(cont.) normalized drain to source on resistance voltage junction temperature, t j (c) 0 80 normalized drain to source on resistance vs. junction temperature 0 120 -40 0.6 1.2 1.8 2.4 3.0 40 140 100 60 20 -20 -60 160 pulse duration=80s duty cycle = 0.5% max v gs =10v, i d =4.4a normalized drain to source on breakdown voltage junction temperature, t j (c) 0 80 normalized drain to source breakdown voltage vs. junction temperature 0.75 -60 1.25 40 0.85 0.95 1.05 1.15 100 60 20 -40 i d =250a -20 120 140 160
uf840 power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-047,f ? typical characteristics(cont.) source to drain current, i sd (a) source to drain voltage, v sd (v) source to drain diode voltage 0.1 0 10 100 t j =25c pulse duration=80s duty cycle = 0.5% max 1.0 0.3 0.6 0.9 1.2 1.5 t j =150c gate to source voltage, v gs (v) gate charge, q g (nc) 24 36 60 gate to source voltage vs. gate charge 0 4 8 12 0 4 12 16 20 i d =8a v ds =250v v ds =400v 8 v ds =100v utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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