sot23 npn silicon planar medium power transistor issue 3 ? october 1995 features * very low equivalent resistance, r ce(sat) 195m w at 1a complementary type ? fmmt591a partmarking detail ? 41a absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 5v continuous collector current i c 1a peak pulse current i cm 2a power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 40 v i c =100 m a collector-emitter breakdown voltage v ceo(sus) 40 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a cut-off currents i cbo ,i ces 100 na v cb =30v,v ces =30v emitter cut-off current i ebo 100 na v eb =4v saturation voltages v ce(sat) 0.3 0.5 v v i c =500ma, i b =50ma* i c =1a, i b =100ma* v be(sat) 1.1 v i c =1a, i b =100ma* base emitter turn on voltage v be(on) 1.0 v i c =1a, v ce =5v* static forward current transfer ratio h fe 300 300 200 35 900 i c =1ma, v ce =5v* i c =500ma, v ce =5v* i c =1a, v ce =5v* i c =2a, v ce =5v* transition frequency f t 150 mhz i c =50ma, v ce =10v f=100mhz collector-base breakdown voltage c obo 10 pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FMMT491A c b e FMMT491A 3 - 117 3 - 118 10a 1a 10ma 100ma 1ma -55 c +25 c +100 c v ce(sat) v i c i c -collector current i c -collector current v be(sat) v i c 0 0.2 100ma 10ma 0.4 0.6 0.8 1.2 1.0 1.4 10a 1a h fe v i c i c -collector current 1ma 100ma 10ma 10a 1a 600 0 800 200 400 10ma 1ma i c -collector current v be(on) v i c 100ma 1a 10a 0.6 0.8 1.0 0.4 0.2 0 i c -collector current v ce(sat) v i c 1ma 0 0.1 100ma 10ma +25c 0.2 0.3 0.4 0.5 10a 1a 0.4 -55 c +25c +100c 10 1 0.1 safe operating area v ce - collector emitter voltage (v) 0.1v 10v 100v 1s dc 100ms 10ms 100us 1ms 1v 0 0.1 0.5 0.3 0.2 1ma 0.01 i c /i b =50 1000 0.001 i c /i b =100 i c /i b =10 i c /i b =10 v ce =5v +100c +25c -55 c v ce =5v -55c +25c +100c i c /i b =10 typical characteristics
sot23 npn silicon planar medium power transistor issue 3 ? october 1995 features * very low equivalent resistance, r ce(sat) 195m w at 1a complementary type ? fmmt591a partmarking detail ? 41a absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 5v continuous collector current i c 1a peak pulse current i cm 2a power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 40 v i c =100 m a collector-emitter breakdown voltage v ceo(sus) 40 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a cut-off currents i cbo ,i ces 100 na v cb =30v,v ces =30v emitter cut-off current i ebo 100 na v eb =4v saturation voltages v ce(sat) 0.3 0.5 v v i c =500ma, i b =50ma* i c =1a, i b =100ma* v be(sat) 1.1 v i c =1a, i b =100ma* base emitter turn on voltage v be(on) 1.0 v i c =1a, v ce =5v* static forward current transfer ratio h fe 300 300 200 35 900 i c =1ma, v ce =5v* i c =500ma, v ce =5v* i c =1a, v ce =5v* i c =2a, v ce =5v* transition frequency f t 150 mhz i c =50ma, v ce =10v f=100mhz collector-base breakdown voltage c obo 10 pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FMMT491A c b e FMMT491A 3 - 117 3 - 118 10a 1a 10ma 100ma 1ma -55 c +25 c +100 c v ce(sat) v i c i c -collector current i c -collector current v be(sat) v i c 0 0.2 100ma 10ma 0.4 0.6 0.8 1.2 1.0 1.4 10a 1a h fe v i c i c -collector current 1ma 100ma 10ma 10a 1a 600 0 800 200 400 10ma 1ma i c -collector current v be(on) v i c 100ma 1a 10a 0.6 0.8 1.0 0.4 0.2 0 i c -collector current v ce(sat) v i c 1ma 0 0.1 100ma 10ma +25c 0.2 0.3 0.4 0.5 10a 1a 0.4 -55 c +25c +100c 10 1 0.1 safe operating area v ce - collector emitter voltage (v) 0.1v 10v 100v 1s dc 100ms 10ms 100us 1ms 1v 0 0.1 0.5 0.3 0.2 1ma 0.01 i c /i b =50 1000 0.001 i c /i b =100 i c /i b =10 i c /i b =10 v ce =5v +100c +25c -55 c v ce =5v -55c +25c +100c i c /i b =10 typical characteristics
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