1/2 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.06 - rev.b infrared light emitting diode, top view type sir-341st3f the sir-341st3f is a gaas infrared light emitting diode housed in clear plastic. this device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. it is small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment. ? applications ? dimensions (unit : mm) optical control equipment light source for remote control devices ? features 1) compact ( ? 3.1mm). 2) high efficiency, high output p o ? 8.4mw (i f ? 50ma). 3) wide radiation angle ? 1/2 ?? 16deg. 4) peak wavelength well suited to silicon detectors ( ? p ? 940nm). 5) good current-optical output linearity. 6) long life, high reliability. ? absolute maximum ratings (ta = 25 ? c) parameter symbol p d i f i fp ? v r topr tstg limits ? 25 to + 85 ? 40 to + 85 75 5 100 500 unit ma v mw ma c c forward current reverse voltage power dissipation pulse forward current operating temperature storage temperature ? pulse width = 0.1msec, duty ratio 1% ? electrical and opti cal characteristics (ta = 25 ? c) parameter symbol p o i e f c i r v f ? p 1 / 2 trtf min. ? 5.6 ? ? ? ? ? ? ? typ. 8.4 18.1 1.3 ? 940 40 16 1.0 1.0 max. ? 1.5 ? 10 ? ? ? ? ? unit mw mw/sr i f = 50ma i f = 50ma i f = 50ma v r = 3v i f = 50ma i f = 50ma i f = 50ma i f = 50ma i f = 50ma a nm nm v deg mhz s conditions optical output emitting strength forward voltage reverse current peak light emitting wavelength spectral line half width half-viewing angle response time cut-off frequency notes: 1. unspecified tolerance shall be 0.2. 2. dimension in parenthesis are show for reference. 1 1 anode 2 2 cathode 1.1 max.1 2.5 1 (2.5) 5.2 0.3 min.24 3.1 0.2 3.8 0.3 3.5 2 ? 0.5 4 ? 0.6
2/2 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.06 - rev.b data sheet sir-341st3f ? electrical and optical characteristic curves fig.1 forward current falloff forward current : i f (ma) ambient temperature : ta ( c) 0 2040608010 0 0 20 40 60 80 100 forward current : i f (ma) forward voltage : v f (v) 0 10 20 30 40 50 01 2 75 c 50 c 25 c 0 c ? 25 c fig.2 forward current vs. forward voltag e relative optical output : p o (%) optical wavelength : (nm) 900 920 940 960 980 0 20 40 60 80 100 fig.3 wavelength fig.4 emitting strength vs. forward current emitting strength : i e (mw/sr) forward current : i f (ma) 20 0 40608010 0 0 10 20 30 40 50 fig.5 relative emitting strengt h vs.ambient temperature relative emitting strength : i e (% ) ambient temperature : ta ( c) 0 ? 20 20 80 40 60 10 20 50 100 200 0 100 80 60 40 20 angular displacement : (deg) relative emitting strength (%) 10 100 20 30 40 50 60 70 80 90 10 0 20 30 40 50 60 70 80 9 0 20 40 60 80 relative emitting strength (%) fig.6 directional pattern
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