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| inchange semiconductor isc product specification isc silicon pnp power transistors 2SB696 description collector-emitter breakdown voltage- : v (br)ceo = -120v(min) high current capability wide area of safe operation complement to type 2sd732 applications designed for af power amplifier applications. recommended for output stage of 60w power amplifier. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -150 v v ceo collector-emitter voltage -120 v v ebo emitter-base voltage -6 v i c collector current-continuous -8 a i cm emitter current-peak -12 a p c collector power dissipation @t c =25 80 w t j junction temperature 150 t stg storage temperature -40~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistors 2SB696 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -5ma; r be = -120 v v (br)ceo collector-emitter breakdown voltage i c = -50ma; r be = -120 v v (br)cbo collector-base breakdown voltage i c = -5ma; i e = 0 -150 v v (br)ebo emitter-base breakdown voltage i e = -5ma; i c = 0 -6 v v ce (sat) collector-emitter saturation voltage i c = -5a; i b = -0.5a b -0.6 v v be (on) base-emitter on voltage i c = -1a; v ce = -5v -1.5 v i cbo collector cutoff current v cb = -80v; i e = 0 -0.1 ma i ebo emitter cutoff current v eb = -4v; i c = 0 -0.1 ma h fe dc current gain i c = -1a; v ce = -5v 40 320 f t current-gain?bandwidth product i c = -1a; v ce = -5v 15 mhz ? h fe classifications c d e f 40-80 60-120 100-200 160-320 isc website www.iscsemi.cn |
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