sot23 npn silicon planar rf transistor issue 2 ? november 1995 features *high f t =650mhz * maximum capacitance 0.7pf * low noise < 5db at 500mhz partmarking detail ? 3ez absolute maximum ratings. parameter symbol value unit collector-emitter voltage v ces 30 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 3v continuous collector current i c 25 ma peak pulse current i cm 50 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c) parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 30 v i c =100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo 25 v i c =1ma, i b =0 emitter-base breakdown voltage v (br)ebo 3v i e =10 m a, i c =0 collector cut-off current i cbo 100 na v cb =25v, i e =0 emitter cut-off current i ebo 100 na v eb =2v,i c =0 collector-emitter saturation voltage v ce(sat) 0.5 v i c =4ma, i b =0.4ma common base feedback capacitance c rb typ. 0.45 0.65 pf v cb =10v, i e =0 f=1mhz base-emitter turn-on voltage v be(on) 0.95 v i c =4ma, v ce =10v static forward current transfer ratio h fe 60 i c =4ma, v ce =10v* transition frequency f t 650 mhz i c =4ma, v ce =10v, f=100mhz collector base capacitance c cb 0.7 pf v cb =10v, i e =0, f=1mhz collector base time constant r b c c 9psi c =4ma, v cb =10v, f=31.8mhz noise figure n f typ. 3 5dbi c =2ma, v ce =5v f=500mhz, *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FMMTH10 c b e sot23 3 - 182 3 - 181 FMMTH10 100 50 0 150 200 100 typical characteristics h fe v i c i c - (ma) h -g a i n v - ( v o lts) v ce =-10v 0.1 1 10 0.4 0.2 0 0.8 1.0 0.6 500 0 1500 1000 30 0 0.1 1 10 c - ( pf ) v cb - (volts) 1.2 c cb v v cb f t v i c v ce =10v f=100mhz 175c 100c 25c -55c 100 0.1 1 10 v ce =-10v 175c 100c 25c -55c f - (mh z) i c - (ma) 100 0.1 1 10 i c - (ma) 1.0 0.8 0.6 0.4 0.2 v be(on) v i c
sot23 npn silicon planar rf transistor issue 2 ? november 1995 features *high f t =650mhz * maximum capacitance 0.7pf * low noise < 5db at 500mhz partmarking detail ? 3ez absolute maximum ratings. parameter symbol value unit collector-emitter voltage v ces 30 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 3v continuous collector current i c 25 ma peak pulse current i cm 50 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c) parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 30 v i c =100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo 25 v i c =1ma, i b =0 emitter-base breakdown voltage v (br)ebo 3v i e =10 m a, i c =0 collector cut-off current i cbo 100 na v cb =25v, i e =0 emitter cut-off current i ebo 100 na v eb =2v,i c =0 collector-emitter saturation voltage v ce(sat) 0.5 v i c =4ma, i b =0.4ma common base feedback capacitance c rb typ. 0.45 0.65 pf v cb =10v, i e =0 f=1mhz base-emitter turn-on voltage v be(on) 0.95 v i c =4ma, v ce =10v static forward current transfer ratio h fe 60 i c =4ma, v ce =10v* transition frequency f t 650 mhz i c =4ma, v ce =10v, f=100mhz collector base capacitance c cb 0.7 pf v cb =10v, i e =0, f=1mhz collector base time constant r b c c 9psi c =4ma, v cb =10v, f=31.8mhz noise figure n f typ. 3 5dbi c =2ma, v ce =5v f=500mhz, *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FMMTH10 c b e sot23 3 - 182 3 - 181 FMMTH10 100 50 0 150 200 100 typical characteristics h fe v i c i c - (ma) h -g a i n v - ( v o lts) v ce =-10v 0.1 1 10 0.4 0.2 0 0.8 1.0 0.6 500 0 1500 1000 30 0 0.1 1 10 c - ( pf ) v cb - (volts) 1.2 c cb v v cb f t v i c v ce =10v f=100mhz 175c 100c 25c -55c 100 0.1 1 10 v ce =-10v 175c 100c 25c -55c f - (mh z) i c - (ma) 100 0.1 1 10 i c - (ma) 1.0 0.8 0.6 0.4 0.2 v be(on) v i c
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