c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . re v . a jun.20 11 mc k 10 0 -8 se se se se n n n n sitive sitive sitive sitive g g g g ate ate ate ate silic silic silic silic o o o o n n n n c c c c on on on on tr tr tr tr o o o o lled lled lled lled rect rect rect rect i i i i f f f f i i i i e e e e r r r r s s s s features sensitive gate trigger current: i gt =200ua ma x imum low on-state voltage: v tm =1.2(typ.)@ i tm low reverse and fo r w a r d blocking current: i drm / i prm =100ua@tc=125 low holding current: i h =5ma ma x imum general description sensitive triggering scr is suitab l e for the application w he r e gate current limited such as microcontrollers, logic integrated circuits, small motor control, gate driver f or large sc r , sensing and detecting circuits. general purpose s w itching and phase control applications absolute maximum ratings (tj=25 unless otherwise specified) symbol parameter v a lue units v drm /v rrm repetitive peak off - state voltage note(1) 600 v i t(r m s) rms on-state current (180 o conduction angles) ti=85 0.8 a i t( a v ) average on-state current (80 o conduction angles ) ti=85 0.5 a i tsm non repetitive surge peak on-state current tp = 8.3 ms 9 a tp = 10 ms 8 i 2 t i 2 t v a lue for fusing tp = 8.3 ms 0.41 a 2 s p gm peak gate po w er 2 w di/dt critical rate of rise of on-state current i tm = 2a; i g = 10ma; di g /dt = 100ma/ s t j =125 50 a/ s p g( a v ) a v e rage gate po w er dissipation t j =125 0.1 w i fgm peak gate current t j =125 1 a v rgm peak gate voltage t j =125 5 v t j, junction temperatu r e -40~125 t stg storage t emperature -40~150 note1: note1: note1: note1: although not recommended, o ff- state voltages up to 800 v may be appli e d w it h out damage, but the th y r istor may s w itch to the on-state. t he rate of rise of current should not e x ceed 15 a/ s. thermal characteristics symbol parameter v a lue units min t y p max r qjc thermal resistance, junction-to-case - - 60 /w r qja thermal resistance, junction-to-ambient - - 150 /w
mc k 10 0 -8 symbol characteristics min typ. max unit i drm / i rrm off - state leakage current (v = v /v ) tc=25 - - 1 a tc=125 100 v tm for w a r d o n voltage ( i tm = 1a tp = 380 s) (note2. 1 ) - 1.2 1.7 v i gt gate trigger current ( continuous dc) (note2.2) (v ak = 7 vdc, rl = 100 ) 15 - 200 a v gt gate trigger voltage (continuous dc) (note2.2) (v ak = 7 vdc, rl = 100 ) - - 0.8 v v gd gate threshold voltage (note2.1) 0.2 - - v dv/dt voltage rate of rise of f -state voltage (v d =0.67v drm ;e x ponential w a v e f orm) t j =125 500 800 - v/ s gate open circuit 25 i h hold i ng current (vd = 12 v ; igt = 0.5 m a ) - 2 5 ma i l latching current (vd = 12 v ; igt = 0.5 ma) - 2 6 ma r d dynamic resistance t j =125 - - 245 m steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance 2 /5 electrical characte r istics (t j = 25 c, r gk = 1 k ? unless otherwise specified) ak drm rrm note 2.1 pulse w i dt h 1.0ms,duty c y cl e 1% 2.2 r gk current is not included in measurement.
mc k 10 0 -8 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance 3 /5
mc k 10 0 -8 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance 4 /5
mc k 10 0 -8 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance 5 /5 sot-89 sot-89 sot-89 sot-89 package package package package dimension dimension dimension dimension
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