? semiconductor components industries, llc, 20008 november, 2008 ? rev. 4 1 publication order number: mcr72/d mcr72-3, mcr72-6, mcr72-8 preferred device sensitive gate silicon controlled rectifiers reverse blocking thyristors designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and mpu interface. features ? center gate geometry for uniform current density ? all diffused and glass-passivated junctions for parameter uniformity and stability ? small, rugged thermowatt construction for low thermal resistance, high heat dissipation and durability ? low trigger currents, 200 a maximum for direct driving from integrated circuits ? pb ? free packages are available* maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive off ? state voltage (note 1) (t j = 40 to 110 c, sine wave, 50 hz to 60 hz) mcr72 ? 3 mcr72 ? 6 mcr72 ? 8 v drm, v rrm 100 400 600 v on-state rms current (180 conduction angles; t c = 83 c) i t(rms) 8.0 a peak non-repetitive surge current (1/2 cycle, 60 hz, t j = 110 c) i tsm 100 a circuit fusing considerations (t = 8.3 ms) i 2 t 40 a 2 s forward peak gate voltage (t 10 s, t c = 83 c) v gm 5.0 v forward peak gate current (t 10 s, t c = 83 c) i gm 1.0 a forward peak gate power (t 10 s, t c = 83 c) p gm 5.0 w average gate power (t = 8.3 ms, t c = 83 c) p g(av) 0.75 w operating junction temperature range t j ? 40 to +110 c storage temperature range t stg ? 40 to +150 c mounting torque ? 8.0 in. lb. stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking scrs 8 amperes rms 100 thru 600 volts k g a to ? 220ab case 221a ? 07 style 3 pin assignment 1 2 3 anode gate cathode 4 anode preferred devices are recommended choices for future use and best overall value. http://onsemi.com see detailed marking, ordering, and shipping information in the package dimensions section on page 5 of this data sheet. marking and ordering information to ? 220ab case 221a ? 09 style 3 1 2 3 1 2 3
mcr72 ? 3, mcr72 ? 6, mcr72 ? 8 http://onsemi.com 2 voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d.
mcr72 ? 3, mcr72 ? 6, mcr72 ? 8 http://onsemi.com 3 thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 2.2 c/w thermal resistance, junction ? to ? ambient r ja 60 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 secs t l 260 c electrical characteristics (t c = 25 c unless otherwise noted.) characteristic symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (note 2) (v ak = rated v drm or v rrm ; r gk = 1 k )t j = 25 c t j = 110 c i drm , i rrm ? ? ? ? 10 500 a a high logic level supply current from v cc i cch 4 4 a a on characteristics peak forward on-state voltage (i tm = 16 a peak, pulse width 1 ms, duty cycle 2%) v tm ? 1.7 2.0 v gate trigger current (continuous dc) (note 3) (v d = 12 v, r l = 100 ) i gt ? 30 200 a gate trigger voltage (continuous dc) (note 3) (v d = 12 v, r l = 100 ) v gt ? 0.5 1.5 v gate non ? trigger voltage (v d = 12 vdc, r l = 100 , t j = 110 c) v gd 0.1 ? ? v holding current (v d = 12 v, initiating current = 200 ma, r gk = 1 k ) i h ? ? 6.0 ma gate controlled turn-on time (v d = rated v drm , i tm = 16 a, i g = 2 ma) t gt ? 1.0 ? s dynamic characteristics critical rate-of-rise of of f-state voltage (v d = rated v drm , r gk = 1 k , t j = 110 c, exponential waveform) dv/dt ? 10 ? v/ s 2. ratings apply for negative gate voltage or r gk = 1 k . devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. devices should not be tested with a constant curre nt source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 3. r gk current not included in measurement.
mcr72 ? 3, mcr72 ? 6, mcr72 ? 8 http://onsemi.com 4 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode ? forward blocking region i rrm at v rrm (off state) 60 i t(av) , average on\state current (amp) 70 80 90 100 2.0 4.0 0 110 6.0 0 i t(av) , average on\state current (amp) 0 4.0 p, average power dissipation (watts) av = 30 90 dc 8.0 6.0 4.0 2.0 8.0 12 16 t c , maximum case temperature (c) 8.0 = 30 60 90 180 dc = conduction angle = conduction angle 180 figure 1. average current derating figure 2. on ? state power dissipation 0.3 120 0.5 1.0 2.0 -40 -20 0 20 40 60 80 90 100 3.0 140 t j , junction temperature ( c) 0.6 0.1 0.2 0.3 0.4 0.5 40 0.7 -60 -40 -20 0 100 20 60 80 120 v d = 12 vdc t j , junction temperature ( c) normalized gate current v , gate trigger voltage (volts) gt v d = 12 vdc figure 3. normalized gate current figure 4. gate voltage
mcr72 ? 3, mcr72 ? 6, mcr72 ? 8 http://onsemi.com 5 marking diagrams to ? 220ab case 221a ? 07 a = assembly location y = year ww = work week mcr72 ? x = device code x = 3, 6, 8, or 8t g=pb ? free package aka = diode polarity to ? 220ab case 221a ? 09 a = assembly location y = year ww = work week mcr72 ? 6t = device code g = pb ? free package aka = diode polarity ay ww mcr72 ? xg aka ay ww mcr72 ? 6tg aka ordering information device package shipping mcr72 ? 3 to ? 220ab 500 units / box mcr72 ? 3g to ? 220ab (pb ? free) mcr72 ? 6 to ? 220ab mcr72 ? 6g to ? 220ab (pb ? free) mcr72 ? 6t to ? 220ab 50 units / rail mcr72 ? 6tg to ? 220ab (pb ? free) mcr72 ? 8 to ? 220ab 500 units / box mcr72 ? 8g to ? 220ab (pb ? free) mcr72 ? 8t to ? 220ab 50 units / rail mcr72 ? 8tg to ? 220ab (pb ? free)
mcr72 ? 3, mcr72 ? 6, mcr72 ? 8 http://onsemi.com 6 package dimensions to ? 220 case 221a ? 07 issue o notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.022 0.36 0.55 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 a k l v g d n z h q f b 123 4 ? t ? seating plane s r j u t c style 3: pin 1. cathode 2. anode 3. gate 4. anode to ? 220 case 221a ? 09 issue af notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. style 3: pin 1. cathode 2. anode 3. gate 4. anode dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j
mcr72 ? 3, mcr72 ? 6, mcr72 ? 8 http://onsemi.com 7 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. sc illc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems in tended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hol d scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding th e design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resa le in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mcr72/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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