features trenchfet power mosfet new low thermal resistance powerpak package with low 1.07-mm profile applications dc/dc synchronous rectifier SI7388DP vishay siliconix new product document number: 71919 s-21518?rev. b, 26-aug-02 www.vishay.com 1 n-channel reduced q g , fast switching mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.007 @ v gs = 10 v 19 30 0.010 @ v gs = 4.5 v 15 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view n-channel mosfet g d s absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 30 gate-source voltage v gs 20 v t a = 25 c 19 12 continuous drain current (t j = 150 c) a t a = 70 c i d 15 9 pulsed drain current i dm 50 a continuous source current (diode conduction) a i s 4.1 1.6 t a = 25 c 5 1.9 maximum power dissipation a t a = 70 c p d 3.2 1.2 w operating junction and storage temperature range t j , t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 10 sec 20 25 maximum junction-to-ambient (mosfet) a steady state r thja 55 65 c/w maximum junction-to-case (drain) steady state r thjc 2.0 2.6 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI7388DP vishay siliconix new product www.vishay.com 2 document number: 71919 s-21518 ? rev. b, 26-aug-02 mosfet specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.80 1.6 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 24 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 70 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 40 a a v gs = 10 v, i d = 19 a 0.0058 0.007 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 15 a 0.008 0.010 forward transconductance a g fs v ds = 15 v, i d = 19 a 40 s diode forward voltage a v sd i s = 4.1 a, v gs = 0 v 0.75 1.1 v dynamic b total gate charge q g 16.3 24 gate-source charge q gs v ds = 15 v, v gs = 5.0 v, i d = 19 a 4 nc gate-drain charge q gd 5.9 turn-on delay time t d(on) 14 20 rise time t r v dd = 15 v, r l = 15 10 15 turn-off delay time t d(off) v dd = 15 v, r l = 15 i d 1 a, v gen = 10 v, r g = 6 44 70 ns fall time t f 20 30 source-drain reverse recovery time t rr i f = 3 a, di/dt = 100 a/ s 40 70 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 10 20 30 40 50 0246810 v gs = 10 thru 3 v 25 c t c = 125 c 1 v -55 c 2 v output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d
SI7388DP vishay siliconix new product document number: 71919 s-21518 ? rev. b, 26-aug-02 www.vishay.com 3 typical characteristics (25 c unless noted) 0.000 0.004 0.008 0.012 0.016 0.020 0 1020304050 0 2 4 6 8 10 0 7 14 21 28 35 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 c rss c oss c iss v ds = 15 v i d = 16 a v gs = 10 v i d = 16 a v gs = 10 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction temperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) v gs = 4.5 v 1.0 1.2 0.00 0.01 0.02 0.03 0.04 0.05 0246810 1 10 50 i d = 16 a 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c source-drain diode forward voltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s
SI7388DP vishay siliconix new product www.vishay.com 4 document number: 71919 s-21518 ? rev. b, 26-aug-02 typical characteristics (25 c unless noted) -0.8 -0.6 -0.4 -0.2 -0.0 0.2 0.4 -50 -25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j - temperature ( c) 0.001 0 1 200 80 120 10 0.01 single pulse power time (sec) 40 160 power (w) 0.1 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 68 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm safe operating area, junction-to-case v ds - drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 - drain current (a) i d 0.1 limited by r ds(on) t c = 25 c single pulse 10 ms 100 ms dc 1 ms 1 s 10 s
SI7388DP vishay siliconix new product document number: 71919 s-21518 ? rev. b, 26-aug-02 www.vishay.com 5 typical characteristics (25 c unless noted) 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.05 single pulse 0.02
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