zxtns618mc document number ds31933 rev. 2 - 2 1 of 10 www.diodes.com january 2010 ? diodes incorporated a product line o f diodes incorporated zxtns618mc 20v npn low saturation transistor and 40v, 1a schottky diode combination dual features ? pnp transistor ? v ceo = 20v ? r sat = 47m? ? i c = 4.5a ? schottky diode ? v r = 40v ? v f = 500mv (@1a) ? i c = 1a ? i c = 4.5a continuous collector current ? low saturation voltage (150mv @ 1a) ? h fe characterized up to 6a ? low v f , fast switching schottky ? lead, halogen, and antimony free/rohs compliant (note 1) ? ?green? devices (note 2) mechanical data ? case: dfn3020b-8 ? terminals: pre-plated nipdau leadframe ? nominal package height: 0.8mm ? ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? solderable per mil-std-202, method 208 ? weight: 0.013 grams (approximate) applications ? dc ? dc converters ? charging circuits ? mobile phones ? motor control ordering information product status package marking reel size (inches) tape width (mm) quantity per reel ZXTNS618MCTA active dfn3020b-8 bs1 7 8 3000 notes: 1. no purposefully added lead. halogen and antimony free. 2. diodes inc?s ?green? policy can be found on our website https://www.diodes.com marking information bs1 = product type marking code dot denotes pin 1 top view pin configuration device symbol dfn3020b-8
zxtns618mc document number ds31933 rev. 2 - 2 2 of 10 www.diodes.com january 2010 ? diodes incorporated a product line o f diodes incorporated zxtns618mc maximum ratings, transistor parameter symbol limit unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 7.5 v peak pulse current i cm 12 a continuous collector current (notes a and f) i c 4.5 a continuous collector current (notes b and f) i c 5 a base current i b 1 a thermal characteristics, transistor characteristic symbol value unit power dissipation at t a = 25 c (notes a and f) linear derating factor p d 1.5 12 w mw/ c power dissipation at t a = 25 c (notes b and f) linear derating factor p d 2.45 19.6 w mw/ c power dissipation at t a = 25 c (notes c and f) linear derating factor p d 1 8 w mw/ c power dissipation at t a = 25 c (notes d and f) linear derating factor p d 1.13 9 w mw/ c power dissipation at t a = 25 c (notes d and g) linear derating factor p d 1.7 13.6 w mw/ c power dissipation at t a = 25 c (notes e and g) linear derating factor p d 3 24 w mw/ c junction to ambient (notes a and f) r ja 83 c/w junction to ambient (notes b and f) r ja 51 c/w junction to ambient (notes c and f) r ja 125 c/w junction to ambient (notes d and f) r ja 111 c/w junction to ambient (notes d and g) r ja 73.5 c/w junction to ambient (notes e and g) r ja 41.7 c/w junction temperature t j 150 c operating and storage temperature range t stg -55 to +150 c notes: a. for a dual device surface mounted on 8 sq cm single si ded 2 oz copper on fr4 pcb, in still air conditions with all exposed pads attached . the copper area is split down the centre line into two separate ar eas with one half connected to each half of the dual device. b. measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on fr4 pcb, in still air conditi ons with all exposed pads attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device . c. for a dual device surface mounted on 8 sq cm single sided 2 oz copper on fr4 pcb, in still air conditions with minimal lead connections only. d. for a dual device surface mounted on 10 sq cm single si ded 1 oz copper on fr4 pcb, in still air conditions with all exposed pads attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. e. for a dual device surface mounted on 85 sq cm single si ded 2 oz copper on fr4 pcb, in still air conditions with all exposed pads attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. f. for a dual device with one active die. g. for dual device with 2 active die running at equal power.
zxtns618mc document number ds31933 rev. 2 - 2 3 of 10 www.diodes.com january 2010 ? diodes incorporated a product line o f diodes incorporated zxtns618mc thermal characteristics and derating information, transistor
zxtns618mc document number ds31933 rev. 2 - 2 4 of 10 www.diodes.com january 2010 ? diodes incorporated a product line o f diodes incorporated zxtns618mc maximum ratings, schottky diode parameter symbol limit unit continuous reverse voltage v r 40 v forward voltage @ i f = 1000ma (typ) v f 425 mv forward current i f 1850 ma average peak forward current d=50% i fav 3 a non repetitive forward current t 100s t 10ms i fsm 12 7 a a thermal characteristics, schottky diode characteristic symbol value unit power dissipation at t a = 25 c (note a and f) linear derating factor p d 1.2 12 w mw/ c power dissipation at t a = 25 c (note b and f) linear derating factor p d 2 20 w mw/ c power dissipation at t a = 25 c (note c and f) linear derating factor p d 0.8 8 w mw/ c power dissipation at t a = 25 c (note d and f) linear derating factor p d 0.9 9 w mw/ c power dissipation at t a = 25 c (note d and g) linear derating factor p d 1..36 13.6 w mw/ c power dissipation at t a = 25 c (note e and g) linear derating factor p d 2.4 24 w mw/ c junction to ambient (note a and f) r ja 83 c/w junction to ambient (note b and f) r ja 51 c/w junction to ambient (note c and f) r ja 125 c/w junction to ambient (note d and f) r ja 111 c/w junction to ambient (note d and g) r ja 73.5 c/w junction to ambient (note e and g) r ja 41.7 c/w junction temperature t j 125 c operating and storage temperature range t stg -55 to +150 c notes: a. for a dual device surface mounted on 8 sq cm single si ded 2 oz copper on fr4 pcb, in still air conditions with all exposed pads attached . the copper area is split down the centre line into two separate ar eas with one half connected to each half of the dual device. b. measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on fr4 pcb, in still air conditi ons with all exposed pads attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device . c. for a dual device surface mounted on 8 sq cm single sided 2 oz copper on fr4 pcb, in still air conditions with minimal lead connections only. d. for a dual device surface mounted on 10 sq cm single si ded 1 oz copper on fr4 pcb, in still air conditions with all exposed pads attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. e. for a dual device surface mounted on 85 sq cm single si ded 2 oz copper on fr4 pcb, in still air conditions with all exposed pads attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. f. for a dual device with one active die. g. for dual device with 2 active die running at equal power.
zxtns618mc document number ds31933 rev. 2 - 2 5 of 10 www.diodes.com january 2010 ? diodes incorporated a product line o f diodes incorporated zxtns618mc thermal characteristics and derating information, schottky diode
zxtns618mc document number ds31933 rev. 2 - 2 6 of 10 www.diodes.com january 2010 ? diodes incorporated a product line o f diodes incorporated zxtns618mc electrical character istics, transistor @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage v ( br ) cbo 40 100 - v i c = 100a collector-emitter breakdown voltage (note 3) v ( br ) ceo 20 27 - v i c = 10ma emitter-base breakdown voltage v ( br ) ebo 7.5 8.2 - v i e = 100a collector cutoff current i cbo - - 25 na v cb = 32v emitter cutoff current i ebo - - 25 ?na v eb = 6v collector emitter cutoff current i ces - - 25 na v ces = 16v static forward current transfer ratio (note 3) h fe 200 300 200 100 400 450 360 180 - - - - - i c = 10ma, v ce = 2v i c = 200ma, v ce = 2v i c = 2a, v ce = 2v i c = 6a, v ce = 2v collector-emitter saturation voltage (note 3) v ce(sat) - - - - - 8 90 115 190 210 15 150 135 250 270 mv i c =0.1a, i b = 10ma i c = 1a, i b = 10ma i c = 2a, i b = 50ma i c = 3a, i b = 100ma i c = 4.5a, i b = 125ma base-emitter turn-on voltage (note 3) v be ( on ) - 0.88 -0.95 v i c = 4.5a, v ce = 2v base-emitter saturation voltage (note 3) v be ( sat ) - 0.98 -1.05 v i c = 4.5a, i b = -125ma output capacitance c obo - 23 30 pf v cb = 10v. f = 1mhz transition frequency f t 100 140 - mhz v ce = 10v, i c = 50ma, f = 100mhz turn-on time t on - 170 - ns v cc =10v, i c =3a i b1 = i b2 = 10ma turn-off time t off - 400 - ns electrical characteris tics, schottky diode @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition reverse breakdown voltage v ( br ) r 40 60 v i r = -300a forward voltage (note 3) v f - - - - - - - - 240 265 305 355 390 425 495 420 270 290 340 400 450 500 600 - mv i f = 50ma i f = 100ma i f = 250ma i f = 500ma i f = 750ma i f = 1000ma i f = 1500ma i f = 1000ma, t a = 100 c reverse current i r - 50 100 a v r = 30v diode capacitance c d - 25 - pf v r = 25v, f = 1mhz reverse recovery time t rr - 12 - ns switched from i f = 500ma to i r = 500ma measured at i r = 50ma notes: 3. measured under pulsed conditions.
zxtns618mc document number ds31933 rev. 2 - 2 7 of 10 www.diodes.com january 2010 ? diodes incorporated a product line o f diodes incorporated zxtns618mc typical characteristics, transistor
zxtns618mc document number ds31933 rev. 2 - 2 8 of 10 www.diodes.com january 2010 ? diodes incorporated a product line o f diodes incorporated zxtns618mc typical characteristics, schottky diode
zxtns618mc document number ds31933 rev. 2 - 2 9 of 10 www.diodes.com january 2010 ? diodes incorporated a product line o f diodes incorporated zxtns618mc package outline dimensions suggested pad layout dfn3020b-8 dim min max typ a 0.77 0.83 0.80 a1 0 0.05 0.02 a3 - - 0.15 b 0.25 0.35 0.30 d 2.95 3.075 3.00 d2 0.82 1.02 0.92 d4 1.01 1.21 1.11 e - - 0.65 e 1.95 2.075 2.00 e2 0.43 0.63 0.53 l 0.25 0.35 0.30 z - - 0.375 all dimensions in mm dimensions value (in mm) c 0.650 g 0.285 g1 0.090 x 0.400 x1 1.120 y 0.730 y1 0.500 y2 0.365 b e e2 d2 l d e a z a1 a3 d4 d4 c x1 g1 x y1 y y2 g
zxtns618mc document number ds31933 rev. 2 - 2 10 of 10 www.diodes.com january 2010 ? diodes incorporated a product line o f diodes incorporated zxtns618mc important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to ma ke modifications, enhancements, im provements, corrections or ot her changes without further notice to this doc ument and any product described herein. diodes incorporated does not assume any liabi lity arising out of the application or use of this document or any produc t described herein; neither does diodes incorporated convey any lic ense under its patent or trademark rights, nor the rights of others. any cu stomer or user of this docum ent or products described herein i n such applications shall assume all risks of such use and will agree to hold diodes incorporated and a ll the companies whose products are represented on diodes incorporated w ebsite, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customer s shall indemnify and hold diodes incorporated and its representatives harmless against all claims, dam ages, expenses, and attorney fee s arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicati on. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or mo re united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical co mponents in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or system s are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to resu lt in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible fo r all legal, regulatory and safety-related requirements concerning their products and any use of diodes incorporated products in such safety-critical, lif e support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of di odes incorporated products in such safety- critical, life support devices or systems. copyright ? 2009, diodes incorporated www.diodes.com
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