rev.1.00, aug.06.2003, page 1 of 4 H7N0602AB silicon n channel mos fet high speed power switching rej03g0068-0100z preliminary rev.1.00 aug.06.2003 features ? low on-resistance r ds(on) = 4.1 m ? typ. ? low drive current ? capable of 4.5 v gate drive outline to-220ab 1 2 3 1. gate 2. drain (flange) 3. source d g s
H7N0602AB rev.1.00, aug.06.2003, page 2 of 4 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current i d 85 a drain peak current i d (pulse) note1 340 a body-drain diode reverse drain current i dr 85 a avalanche current i ap note3 65 a avalanche energy e ar note3 362 mj channel dissipation pch note2 100 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. tc = 25 c 3. value at tch = 25 c, rg 50 ?
H7N0602AB rev.1.00, aug.06.2003, page 3 of 4 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 60 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 ? ? v i g = 100 a, v ds = 0 gate to source leak current i gss ?? 10 av gs = 16 v, v ds = 0 zero gate voltage drain current i dss ??10 av ds = 60 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.5 ? 2.5 v i d = 1 ma, v ds = 10 v note1 static drain to source on state r ds(on) ?4.15.2m ? i d = 45 a, v gs = 10 v note1 resistance ? 6.2 9.0 m ? i d = 45 a, v gs = 4.5 v note1 forward transfer admittance |y fs | 70 120 ? s i d = 45 a, v gs = 10 v note1 input capacitance ciss ? 9000 ? pf v ds = 10 v output capacitance coss ? 1000 ? pf v gs = 0 reverse transfer capacitance crss ? 470 ? pf f = 1 mhz total gate charge qg ? 140 ? nc v dd = 25 v gate to source charge qgs ? 30 ? nc v gs = 10 v gate to drain charge qgd ? 30 ? nc i d = 85 a turn-on delay time t d(on) ?55?nsv gs = 10 v, i d = 45 a rise time t r ? 290 ? ns r l = 0.67 ? turn-off delay time t d(off) ? 140 ? ns rg = 4.7 ? fall time t f ?50?ns body?drain diode forward voltage v df ?0.95?v i f = 85 a, v gs = 0 body?drain diode reverse recovery time t rr ?45?nsi f = 85 a, v gs = 0 dif/dt = 100 a/ s notes: 1. pulse test
H7N0602AB rev.1.00, aug.06.2003, page 4 of 4 package dimensions 0.5 0.1 2.54 0.5 0.76 0.1 14.0 0.5 15.0 0.3 2.79 0.2 18.5 0.5 7.8 0.5 10.16 0.2 2.54 0.5 1.26 0.15 4.44 0.2 2.7 max 1.5 max 11.5 max 9.5 8.0 1.27 6.4 +0.2 ?0.1 3.6 +0.1 ?0.08 package code jedec jeita mass (reference value) to-220ab conforms conforms 1.8 g as of january, 2003 unit: mm
keep safety first in your circuit designs! 1. renesas technology corporation puts the maximum effort into making semiconductor products better and more reliable, but ther e is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corporation p roduct best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas technology corporat ion or a third party. 2. renesas technology corporation assumes no responsibility for any damage, or infringement of any third-party's rights, origin ating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents i nformation on products at the time of publication of these materials, and are subject to change by renesas technology corporation without notice due to product improvements or other reas ons. it is therefore recommended that customers contact renesas technology corporation or an authorized renesas technology corporation product distributor for the latest produ ct information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracie s or errors. please also pay attention to information published by renesas technology corporation by various means, including the renesas te chnology corporation semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, a nd algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp oration assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corporation semiconductors are not designed or manufactured for use in a device or system that is used un der circumstances in which human life is potentially at stake. please contact renesas technology corporation or an authorized renesas technology corporation product distributor wh en considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or u ndersea repeater use. 6. the prior written approval of renesas technology corporation is necessary to reprint or reproduce in whole or in part these materials. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lic ense from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is pro hibited. 8. please contact renesas technology corporation for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com ? 2003. renesas technology corp., all rights reserved. printed in japan. colophon 0.0
|
