utc 2SD880 npn epitaxial planar transistor utc unisonic technologies co., ltd. 1 qw-r203-013,b npn epitaxial transistor description the utc 2SD880 is designed for audio frequency power amplifier applications. feature *high dc current gain: hfe=300(max.)(v ce =5v,i c =0.5a) *low saturation voltage: v ce (sat)=1.0v(max.)(i c =3a,i b =0.3a) *high power dissipation: p c =30w (ta=25 c ) *complementary to 2sb834 to-220 1 1:base 2:collector 3:emitter *pb-free plating product number: 2SD880l absolute maximum ratings (ta=25 c) parameter symbol value unit maximum voltages and currents collector to base voltage vcbo 60 v collector to emitter voltage vceo 60 v emitter to base voltage vebo 7 v collector current ic 3 a base current ib 0.5 a maximum power dissipation total power dissipation pd 30 w maximum temperature junction temperature range t opr 150 c storage temperature range t stg -55 ~ +150 c electrical characteristics (ta=25 c) parameter symbol test conditions min. typ. max. unit collector-emitter breakdown voltage bv ceo i c =50ma,i e =0 60 v collector cut-off current i cbo v cb =60v,i e =0 100 a emitter cut-off current i ebo v eb =7v,i c =0 100 a collector-emitter saturation voltage v ce(sat) i c =3a, i b =300ma 1 v base-emitter saturation voltage v be(on) v ce =5v, i c =500ma 1 v dc current gain hfe i c =500ma, v ce =5v 60 300 current gain bandwidth product ft v ce =5v, i c =500ma 3 mhz
utc 2SD880 npn epitaxial planar transistor utc unisonic technologies co., ltd. 2 qw-r203-013,b classification of hfe rank o y gr range 60-120 100-200 150-300 typical characteristics 40 0 temperature, t c ( ) p o w e r d i s s i p a t i o n , p d ( w a t t s ) 100 0 power derating 125 150 50 25 10 15 75 5 20 25 30 35 3.0 2.0 collector-emitter voltage, v ce (v) c o l l e c t o r c u r r e n t , i c ( a ) 1.0 2.5 1.5 3.0 6.0 i b = 10ma 4.0 5.0 2.0 1.0 0.5 0 ic-vce t c = 25 20 30 40 50 60 70 80 90 300 collector current, i c (ma) d c c u r r e n t c a i n , h f e 50 100 100 3k 200 1k 20 2 30 10 dc current gain 25 510 50 500 t c = 100 -25 v ce = 5.0v 3.0 base-emitter voltage, v be (v) c o l l e c t o r c u r r e n t , i c ( a ) 1.5 2.0 0.8 1.6 1.0 1.4 0.6 1.0 0 0.2 0.4 1.2 v ce = 5.0v 2.5 0.5 ic-vbe t c = 100 25 -25 0.5 collector current, i c (ma) v o l t a g e , v ( v o l t s ) 0.1 0.2 100 3k 200 1k 20 2 0.05 0.02 v ce(sat) -i c 5 10 50 500 t c = 100 -25 2k 1.0 25 common emitter i c /i b = 10 5.0 collector emitter voltage, v ce (volts) c o l l e c t o r c u r r e n t , i c ( a m p ) 1.0 2.0 10 100 5.0 1.0 0.5 0.1 active-region safe operating area (soa) 2.0 7.0 20 bonding wire limit second breakdown limit thermally limited at t c = 25 (single pulse) 70 10 100ms 50 0.2 10ms 1ms dc
utc 2SD880 npn epitaxial planar transistor utc unisonic technologies co., ltd. 3 qw-r203-013,b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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