inchange semiconductor isc product specification isc silicon npn power transistor BDY74 description excellent safe operating area collector-emitter sustaining voltage- : v ceo(sus) = 120v(min.) collector-emitter saturation voltage- : v ce(sat )= 1.0v(max)@ i c = 3a applications designed for use in industrial and commercial equipment including high fidelity audio am plifiers, series and shunt regulators and power switches. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 7 v i c collector current-continuous 10 a i cp collector current-peak 15 a i b b base current-continuous 7 a p c collector power dissipation@t c =25 117 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.5 /w isc website www.iscsemi.cn 1
inchange semiconductor isc product specification isc silicon npn power transistor BDY74 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 200ma; i b = 0; l= 25mh 120 v v cex(sus) collector-emitter sustaining voltage i c = 100ma; v be = -1.5v 150 v v ce (sat) collector-emitter saturation voltage i c = 3a; i b = 0.3a b 1.0 v v be( on ) base-emitter on voltage i c = 3a; v ce = 4v 1.7 v i cbo collector cutoff current v cb = 130v; i e = 0 1.0 ma i cex collector cutoff current v ce = 130v; v be( off ) = 1.5v v ce = 130v; v be( off ) = 1.5v, t c = 150 1.0 10 ma i ebo emitter cutoff current v eb = 7v; i c = 0 5.0 ma h fe dc current gain i c = 3a; v ce = 4v 50 150 f t current gain-bandwidth product i c = 1a; v ce = 10v 0.8 mhz isc website www.iscsemi.cn 2
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