es1a-lfr thru es1j-lfr page: 1 frontier electronics corp. 667 e. cochran street, simi valley, ca 93065 tel: (805) 522-9998 fax: (805) 522-9989 e-mail: frontiersales@frontierusa.com web: http://www.frontierusa.com 1a surface mount fast efficient recovery rectifiers es1a-lfr thru es1j-lfr features z for surface mounted applications z low profile package z built-in strain relief z easy pick and place z glass passivated chip junction z plastic material used carries underwriters laboratory classification 94 v-0 z high temperature soldering:250c/10 seconds at terminals z rohs mechanical data z case: molded plastic, do- 214ac (sma), dimensions in inches and (millimeters) z terminals: solder plated z polarity: indicated by cathode band z weight: 0.064 grams maximum ratings and electrical characteristics ratings at 25 c ambient temperature unless otherwise specified single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% ratings symbol es1a-lfr es1b-lfr ES1D-LFR es1e-lfr es1g-lfr es1j-lfr units maximum recurrent peak reverse voltage v rrm 50 100 200 300 400 600 v maximum rms voltage v rms 35 70 140 210 280 420 v maximum dc blocking voltage v dc 50 100 200 300 400 600 v maximum average forward rectified current at tl=90 c i o 1.0 a maximum overload surge 8.3ms single half sine-wave i fsm 30 a typical junction capacitance (note 1) c j 15 10 pf typical thermal resistance (note 2) jl 30 c/w storage temperature range t stg -55 to + 150 operating temperature range t op -55 to + 125 electrical characteristics (a t t a =25 c unless otherwise noted) characteristics symbol es1a-lfr es1b-lfr ES1D-LFR es1e-lfr es1g-lfr es1j-lfr units maximum forward voltage at 1.0a and 25 v f 0.98 1.25 1.75 v maximum reverse current at 25 i r 10 a maximum reverse recovery time (note 3) t rr 25 ns marking es1a es1b es1d es1e es1g es1j note: 1. measured at 1.0 mhz and applied reverse voltage of 4.0 v 2. thermal resistance from junction to terminal 5.0mm 2 (.013 mm thick) land areas 3. reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a .220(5.6) .192(4.9) .190(4.8) .157(4.0) .071(1.8) .035(0.9) .110(2.8) .090(2.3) .080(2.0) .100(2.6) .080(2.0) .065(1.65) .040(1.25) cathode soldering pad .220(5.58) ref .052(1.32) min .08(2.03) min .094(2.38) max
es1a-lfr thru es1j-lfr page: 2 ratings and characteristic curve es1a-lfr thru es1j-lfr fig. 5-maximun non-repetitive forward surge current 40 30 25 20 15 10 5 0 1 5 10 20 50 100 number of cycles at 60 hz peak forward surge current ( a ) 8.3 ms single half sine wave (jedec method) +0.5a 0 -0.25a trr 1cm set time base for 10/20 ns/cm fig. 4-typical instantaneous forward characteristics 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 instantaneous forward voltage (v) es1a-lf~es1d-lf es1j-lf 10 1.0 .1 .01 .001 instantaneous forward current (a) es1e-lf~es1g-lf fig. 6-typical junction capacitance .1 .2 .4 1.0 2 4 10 20 40 100 reverse voltage (v) 200 100 40 20 10 6 4 2 1 junction capacitance (pf) t j =25 o c es1a-lf~es1d-lf es1e-lf~es1j-lf fig. 3-typical reverse characteristics 0 20 40 60 80 100 120 140 t j =25 o c t j =80 o c t j =100 o c instantaneous reverse current (ua) 100 10 1.0 0.1 0.01 percent of rated peak reverse voltage (%) average forward current ( a ) 2.0 1.0 0 25 50 7 5 10 0 12 5 15 0 17 5 lead temperature ( o c) fig. 2-typical forward current derating curve single phase half wave 60 hz resistive or inductive load p.c.b mounted on 0.30.3?(8.08.0mm) copper pad areas fig. 1-test circuit diagram and reverse recovery time characteristic pulse generator ( note 2 ) (+) 25 v dc (approx) (-) d.u.t. 1 non inductive oscilloscope ( note 1 ) 50 no inductive 100 no inductive (-) (+) note: 1. rise time=7ns max. input impedance=1 mohms 22pf 2. rise time =10ns max. source impedance=50 ohms
|
