? 2006 ixys all rights reserved ds99425e(01/06) polarhv tm hiperfet power mosfet ixfk 32n80p v dss = 800 v ixfx 32n80p i d25 = 32 a r ds(on) 270 m ? ? ? ? ? t rr 250 ns n-channel enhancement mode avalanche rated fast intrinsic diode features l international standard packages l fast recovery diode l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 800 v v gs(th) v ds = v gs , i d = 8 ma 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 1000 a r ds(on) v gs = 10 v, i d = 0.5 i d25 270 m ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c32a i dm t c = 25 c, pulse width limited by t jm 70 a i ar t c = 25 c16a e ar t c = 25 c50mj e as t c = 25 c 2.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 830 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-264) 1.13/10 nm/lb.in. weight to-264 10 g plus247 6 g s g d (tab) to-264 (ixfk) plus247 (ixfx) g = gate d = drain s = source tab = drain (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixfk 32n80p ixfx 32n80p symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 23 38 s c iss 8800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 700 pf c rss 26 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d =0.5 i d25 24 ns t d(off) r g = 2 ? (external) 85 ns t f 24 ns q g(on) 150 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 40 nc q gd 44 nc r thjc 0.15 c/w r thcs 0.15 c/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 32 a i sm repetitive 70 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/ s 250 ns q rm v r = 100v, v gs = 0 v 0.8 c i rm 6.0 a dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm outline to-264 outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2
? 2006 ixys all rights reserved ixfk 32n80p ixfx 32n80p fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 v d s - volts i d - amperes v gs = 10v 7v 6v 5v fig. 3. output characteristics @ 125 o c 0 5 10 15 20 25 30 35 0 3 6 9 12 15 18 21 24 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 1. output characteristics @ 25 o c 0 5 10 15 20 25 30 35 01 234 5678 910 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 32a i d = 16a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) no r m aliz e d t o 0.5 i d25 value vs. i d 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 10203040506070 i d - amperes r d s ( o n ) - normalized t j = 125 o c t j = 25 o c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixfk 32n80p ixfx 32n80p fig. 11. capacitance 10 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rs f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v g s - volts v ds = 400v i d = 16a i g = 10ma fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 33.5 44.5 5 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 45 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 100 0.30.40.50.60.70.80.9 1 1.11.2 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. maxim um transient therm al resistance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w
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