bf 799 oct-26-1999 1 npn silicon rf transistor for linear broadband amplifier application up to 500 mhz saw filter driver in tv tuners 1 2 3 vps05161 type marking pin configuration package bf 799 lks 1 = b 2 = e 3 = c sot-23 maximum ratings parameter symbol unit value collector-emitter voltage v ceo 20 v collector-emitter voltage v ces 30 collector-base voltage v cbo 30 emitter-base voltage v ebo 3 collector current i c 35 ma peak collector current , i cm 50 peak base current i bm 15 280 total power dissipation , t a 25 c 1) p tot mw junction temperature t j 150 c storage temperature t stg -65 ... 150 thermal resistance junction-ambient 1) r thja 450 k/w 1 t s is measured on the collector lead at the soldering point to the pcb
bf 799 oct-26-1999 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter values unit symbol min. max. typ. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo - v - 20 v (br)cbo 30 - - collector-base breakdown voltage i c = 10 a, i e = 0 base-emitter breakdown voltage i e = 10 a, i c = 0 v (br)ebo 3 - - collector-base cutoff current v cb = 20 v, i e = 0 na 100 - - i cbo h fe 95 100 dc current gain i c = 5 ma, v ce = 10 v i c = 20 ma, v ce = 10 v 35 40 - 250 - v cesat - v 0.5 collector-emitter saturation voltage i c = 20 ma, i b = 2 ma 0.15 v besat - - base-emitter saturation voltage i c = 20 ma, i b = 2 ma 0.95 ac characteristics transition frequency i c = 5 ma, v ce = 10 v, f = 100 mhz i c = 20 ma, v ce = 8 v, f = 100 mhz f t - - 800 1100 - - mhz output capacitance v cb = 10 v, i e = 0 ma, f = 1 mhz c ob - 0.96 - pf collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 0.7 - collector-emitter capacitance v ce = 10 v, f = 1 mhz c ce - 0.28 - noise figure i c = 5 ma, v ce = 10 v, f = 100 mhz, z s = 50 f - 3 - db output conductance i c = 20 ma, v ce = 10 v, f = 35 mhz g 22e - 60 - s
bf 799 oct-26-1999 3 total power dissipation p tot = f ( t a ) 0 eht07115 bf 799 100 200 300 150 100 50 t a ?c 0 tot p mw transition frequency f t = f ( i c ) f = 100mhz 0 0 eht07116 bf 799 20 ma 50 200 400 600 800 1000 mhz 1200 10 30 40 v ce = 5 2 v v c t f collector-base capacitance c cb = f ( v cb ) f = 1 mhz 0 eht07117 bf 799 0.5 1.0 pf 1.5 20 v 10 v cb 0 cb c
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