for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 gaas phemt mmic low noise amplifier, 5 - 10 ghz v01.0310 general description features functional diagram l ow noise f igure: 1.8 db high gain: 19 db high p 1db o utput p ower: 16 dbm s ingle s upply: +3.5 v @ 80 ma o utput ip 3: +28 dbm 50 o hm matched i nput/ o utput 16 l ead 3x3mm sm t p ackage: 9mm2 electrical specifcations , t a = +25 c, vdd1 = vdd2 = +3.5v, idd = 80 ma [2] typical applications this h m c902 lp 3 e is ideal for: ? p oint-to- p oint r adios ? p oint-to- m ulti- p oint r adios ? m ilitary & s pace ? test i nstrumentation the h m c902 lp 3 e is a gaas mmi c l ow noise amplifer housed in a leadless 3x3 mm plastic sur- face mount package. the amplifer operates between 5 and 10 ghz, providing 19 db of small signal gain, 1.8 db noise fgure, and output ip 3 of +28 dbm, while requiring only 80 ma from a +3.5v supply. the p 1db output power of +16 dbm enables the l na to function as a lo driver for balanced, i /q or image reject mixers. the h m c902 lp 3 e also features i / o s that are dc blocked and internally matched to 50 o hms, making it ideal for high capacity microwave radios and c-band v s at applications. HMC902LP3E p arameter m in. typ. m ax. units f requency r ange 5 - 10 ghz gain [1] 17 19.5 db gain variation over temperature 0.01 db / c noise f igure [1] 1.8 2.2 db i nput r eturn l oss 12 db o utput r eturn l oss 15 db o utput p ower for 1 db compression [1] 16 dbm s aturated o utput p ower ( p sat) [1] 17.5 dbm o utput third o rder i ntercept ( ip 3) 28 dbm s upply current ( i dd) (vdd = 3.5v, set vgg2 = 0v, vgg1 = 0v typ.) 80 110 ma [1] board loss removed from gain, power and noise fgure measurement. [2] vgg1 = vgg2 = open for normal, self-biased operation.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 HMC902LP3E v01.0310 gaas phemt mmic low noise amplifier, 5 - 10 ghz gain vs. temperature [1] output return loss vs. temperature broadband gain & return loss [1] input return loss vs. temperature output ip3 vs. temperature noise figure vs. temperature [1] [1] board loss removed from gain, power and noise fgure measurement. -50 -40 -30 -20 -10 0 4 5 6 7 8 9 10 11 +25c +85c -40c return loss (db) frequency (ghz) 10 15 20 25 30 35 4 5 6 7 8 9 10 11 +25c +85c -40c ip3 (dbm) frequency (ghz) -50 -40 -30 -20 -10 0 4 5 6 7 8 9 10 11 +25c +85c -40c return loss (db) frequency (ghz) 0 1 2 3 4 5 6 4 5 6 7 8 9 10 11 +25c +85c -40c noise figure (db) frequency (ghz) 15 17 19 21 23 25 4 5 6 7 8 9 10 11 +25c +85c -40c gain (db) frequency (ghz) -25 -15 -5 5 15 25 3 5 7 9 11 13 s21 s11 s22 response (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 HMC902LP3E v01.0310 gaas phemt mmic low noise amplifier, 5 - 10 ghz psat vs. temperature [1] power compression @ 7 ghz [1] p1db vs. temperature [1] reverse isolation vs. temperature gain, noise figure & power vs. supply voltage @ 7 ghz [1] -4 0 4 8 12 16 20 24 -21 -18 -15 -12 -9 -6 -3 0 3 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 8 10 12 14 16 18 20 22 0 1 2 3 4 5 6 7 3 3.5 4 gain (db), p1db (dbm) noise figure (db) vdd (v) 0 5 10 15 20 25 30 0 20 40 60 80 100 120 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 gain ip3 idd gain (db), ip3 (dbm) idd (ma) vgg1, vgg2 gate volltage (vdc) -60 -50 -40 -30 -20 -10 0 4 5 6 7 8 9 10 11 +25c +85c -40c isolation (db) frequency (ghz) 0 5 10 15 20 25 4 5 6 7 8 9 10 11 +25c +85c -40c psat (dbm) frequency (ghz) 0 5 10 15 20 25 4 5 6 7 8 9 10 11 +25c +85c -40c p1db (dbm) frequency (ghz) gain, output ip3 & idd vs. gate voltage @ 7 ghz [2][3] [1] board loss removed from gain, power and noise fgure measurement. [2] board loss removed from gain measurement [3] data taken at vdd1 = vdd2 = 3v
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 current vs. input power @ 7 ghz 78 80 82 84 86 88 -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 3 idd (ma) input power (dbm) outline drawing absolute maximum ratings ele ct ros tat ic se n si t i v e de v ic e o b ser v e hand li ng pre caut io n s drain bias voltage +4.5v rf i nput p ower +10 dbm gate bias voltage, vgg1 -0.8v to +0.2v gate bias voltage, vgg2 -0.8v to +0.2v channel temperature 150 c continuous p diss (t = 85 c) (derate 7 m w /c above 85 c) 0.45 w thermal r esistance (channel to ground paddle) 143.8 c/ w s torage temperature -65 to +150 c o perating temperature -40 to +85 c HMC902LP3E v01.0310 gaas phemt mmic low noise amplifier, 5 - 10 ghz n ot es : 1. p ackag e b o dy m at eri a l : low s t ress i nj e ct io n mol d e d pl a s t i c sili ca and sili c o n impre gnat e d. 2. le ad and g ro und p add le m at eri a l : c opper a llo y. 3. le ad and g ro und p add le pl at i ng: 100% m att e t i n 4. d ime n sio n s a re i n i nch es [ millime t ers ]. 5. le ad sp ac i ng t oler anc e is n o n-cu m u l at i v e . 6. p ad bu rr le ngth s ha ll b e 0.15mm m ax. p ad bu rr h ei ght s ha ll b e 0.05mm m ax. 7. p ackag e w a rp s ha ll n ot e xc ee d 0.05mm 8. a ll g ro und le ad s and g ro und p add le m u s t b e sol d ere d to p cb rf g ro und. 9. refer to h i tt i t e a ppli cat io n n ot e for s ugg es t e d p cb l and p att er n. p art number p ackage body m aterial l ead f inish p ackage m arking [1] h m c902 lp 3 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n [2] 902 xxxx [1] 4-digit lot number xxxx [2] m ax peak refow temperature of 260 c package information
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 HMC902LP3E v01.0310 gaas phemt mmic low noise amplifier, 5 - 10 ghz pin descriptions p in number f unction description i nterface s chematic 1, 2, 5, 8, 11 - 13, 16 n/c the pins are not connected internally; however, all data shown herein was measured with these pins connected to rf / dc ground externally. 3 rfi n this pin is ac coupled and matched to 50 o hms 4, 9 gnd p ackage bottom has exposed metal ground paddle that must be connected to rf /dc ground. 6, 7 vgg1, vgg2 o ptional gate control for amplifer. i f left open, the amplifer will run self-biased at standard current. negative volt - age applied will reduce drain current. e xternal capacitors required, see application circuits herein. 10 rfo ut this pin is ac coupled and matched to 50 o hms 14, 15 vdd2, vdd1 p ower supply voltage for the amplifer. s ee assembly for required external components.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 HMC902LP3E v01.0310 gaas phemt mmic low noise amplifier, 5 - 10 ghz i tem description j1, j2 sm a connector j3, j4, j6 - j8 dc p ins c1, c4, c7, c10 100 p f capacitor, 0402 p kg. c2, c5, c8, c11 10 kp f capacitor, 0402 p kg. c3, c6, c9, c12 4.7 f capacitor, tantalum u1 h m c902 lp 3 e amplifer p cb [2] 128395 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon 25 fr list of material for evaluation pcb 129787 [1] the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the pack - age ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. evaluation pcb
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 7 HMC902LP3E v00.0210 gaas phemt mmic low noise amplifier, 5 - 10 ghz application circuit - standard (self-biased) operation application circuit - gate control, reduced current operation
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 8 HMC902LP3E v00.0210 gaas phemt mmic low noise amplifier, 5 - 10 ghz notes:
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