1 motorola bipolar power transistor device data
so8 for surface mount applications ? collector emitter sustaining voltage e v ceo(sus) = 30 vdc (min) @ i c = 10 madc ? high dc current gain e h fe = 140 (min) @ i c = 1.2 adc = 125 (min) @ i c = 3.0 adc ? low collector emitter saturation voltage e v ce(sat) = 0.24 vdc (max) @ i c = 1.2 adc = 0.60 vdc (max) @ i c = 5.0 adc ? miniature so8 surface mount package saves board space ?????????????????????????????????? ?????????????????????????????????? maximum ratings (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? rating ?????? ?????? symbol ??????? ??????? value ????? ????? unit ??????????????????? ??????????????????? collectorbase voltage ?????? ?????? v cb ??????? ??????? 45 ????? ????? vdc ??????????????????? ??????????????????? collectoremitter voltage ?????? ?????? v ceo ??????? ??????? 30 ????? ????? vdc ??????????????????? ??????????????????? emitterbase voltage ?????? ?????? v eb ??????? ??????? 8.0 ????? ????? vdc ??????????????????? ? ????????????????? ? ??????????????????? collector current e continuous collector current e peak ?????? ? ????? ?????? i c ??????? ? ????? ? ??????? 3.0 5.0 ????? ? ??? ? ????? adc ??????????????????? ??????????????????? base current e continuous ?????? ?????? i b ??????? ??????? 1.0 ????? ????? adc ??????????????????? ??????????????????? operating and storage junction temperature range ?????? ?????? t j , t stg ??????? ??????? 55 to + 150 ????? ????? c ?????????????????????????????????? ?????????????????????????????????? thermal characteristics ??????????????????? ??????????????????? characteristic ?????? ?????? symbol ??????? ??????? max ????? ????? unit ??????????????????? ? ????????????????? ? thermal resistance junction to ambient (1) ?????? ? ????? r q jc ??????? ? ????? ? 62.5 ????? ? ??? ? c/w ??????????????????? ? ????????????????? ? ??????????????????? total power dissipation @ t a = 25 c (1) derate above 25 c ?????? ? ????? ?????? p d ??????? ? ????? ? ??????? 2.0 16 ????? ? ??? ? ????? watts mw/ c ??????????????????? ??????????????????? maximum temperature for soldering ?????? ?????? t l ??????? ??????? 260 ????? ????? c (1) mounted on 2o sq. fr4 board (1o sq. 2 oz. cu 0.06o thick single sided) with one die operating, 10 seconds max. this document contains information on a new product. specifications and information are subject to change without notice. preferred devices are motorola recommended choices for future use and best overall value. rev 2
semiconductor technical data order this document by MMDJ3P03BJT/d ? motorola, inc. 1997
dual bipolar power transistor pnp silicon 30 volts 3 amperes case 75105, style 16 (so8) motorola preferred device emitter1 1 2 3 4 8 7 6 5 top view pinout base1 emitter2 base2 collector1 collector1 collector2 collector2 c b e c b e schematic
2 motorola bipolar power transistor device data ?????????????????????????????????? ?????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ???????????????????? ???????????????????? characteristic ???? ???? symbol ???? ???? min ???? ???? typ ???? ???? max ??? ??? unit ?????????????????????????????????? ? ???????????????????????????????? ? off characteristics ???????????????????? ? ?????????????????? ? ???????????????????? collectoremitter sustaining voltage (i c = 10 madc, i b = 0 adc) ???? ? ?? ? ???? v ceo(sus) ???? ? ?? ? ???? 30 ???? ? ?? ? ???? e ???? ? ?? ? ???? e ??? ?? ? ??? vdc ???????????????????? ? ?????????????????? ? ???????????????????? collector cutoff current (v ce = 25 vdc, r be = 200 ) ???? ? ?? ? ???? i cer ???? ? ?? ? ???? e ???? ? ?? ? ???? e ???? ? ?? ? ???? 20 ??? ?? ? ??? m adc ???????????????????? ? ?????????????????? ? ???????????????????? emitter cutoff current (v be = 5.0 vdc) ???? ? ?? ? ???? i ebo ???? ? ?? ? ???? e ???? ? ?? ? ???? e ???? ? ?? ? ???? 10 ??? ?? ? ??? m adc ?????????????????????????????????? ?????????????????????????????????? on characteristics (1) ???????????????????? ? ?????????????????? ? ? ?????????????????? ? ???????????????????? collectoremitter saturation voltage (i c = 0.8 adc, i b = 20 madc) (i c = 1.2 adc, i b = 20 madc) (i c = 5.0 adc, i b = 1.0 adc) ???? ? ?? ? ? ?? ? ???? v ce(sat) ???? ? ?? ? ? ?? ? ???? e e e ???? ? ?? ? ? ?? ? ???? 0.14 e e ???? ? ?? ? ? ?? ? ???? 0.20 0.24 0.60 ??? ?? ? ?? ? ??? vdc ???????????????????? ? ?????????????????? ? ???????????????????? baseemitter saturation voltage (i c = 5.0 adc, i b = 1.0 adc) ???? ? ?? ? ???? v be(sat) ???? ? ?? ? ???? e ???? ? ?? ? ???? e ???? ? ?? ? ???? 1.40 ??? ?? ? ??? vdc ???????????????????? ???????????????????? baseemitter on voltage (i c = 3.0 adc, v ce = 4.0 vdc) ???? ???? v be(on) ???? ???? e ???? ???? e ???? ???? 1.10 ??? ??? vdc ???????????????????? ? ?????????????????? ? ? ?????????????????? ? ???????????????????? dc current gain (i c = 1.2 adc, v ce = 4.0 vdc) (i c = 3.0 adc, v ce = 4.0 vdc) ???? ? ?? ? ? ?? ? ???? h fe ???? ? ?? ? ? ?? ? ???? 140 125 ???? ? ?? ? ? ?? ? ???? e 180 ???? ? ?? ? ? ?? ? ???? e e ??? ?? ? ?? ? ??? e ?????????????????????????????????? ?????????????????????????????????? dynamic characteristics ???????????????????? ? ?????????????????? ? ???????????????????? output capacitance (v cb = 10 vdc, i e = 0 adc, f = 1.0 mhz) ???? ? ?? ? ???? c ob ???? ? ?? ? ???? e ???? ? ?? ? ???? 100 ???? ? ?? ? ???? e ??? ?? ? ??? pf ???????????????????? ? ?????????????????? ? ???????????????????? input capacitance (v eb = 8.0 vdc) ???? ? ?? ? ???? c ib ???? ? ?? ? ???? e ???? ? ?? ? ???? 135 ???? ? ?? ? ???? e ??? ?? ? ??? pf ???????????????????? ? ?????????????????? ? ???????????????????? currentgain e bandwidth product (2) (i c = 500 ma, v ce = 10 v, f test = 1.0 mhz) ???? ? ?? ? ???? f t ???? ? ?? ? ???? e ???? ? ?? ? ???? 105 ???? ? ?? ? ???? e ??? ?? ? ??? mhz (1) pulse test: pulse width 300 m s, duty cycle 2%. (2) f t = |h fe | f test
3 motorola bipolar power transistor device data figure 1. dc current gain figure 2. aono voltages figure 3. collector saturation region figure 4. capacitance v r , reverse bias (v) 1.0 0.1 1000 100 10 capacitance (pf) 10 100 c ob 1.0 10 0.01 i c , collector current (a) 1000 100 10 i c , collector current (a) 1.0 10 0.01 0.01 100 1.0 i b , base current (ma) 1.00 0.75 0.50 0.25 0 h fe , dc current gain v, voltage (v) v 1.0 0.1 0.1 0.1 1.0 10 , collectoremitter voltage (v) ce(sat) v ce = 2 v 150 c 25 c 55 c v be(sat) v ce(sat) i c /i b = 125 i c = 1.2 a i c = 0.8 a i c = 0.5 a figure 5. thermal response 0.00001 i c , collector current (amps) 10 0.1 0.001 r 1000 0.0001 0.001 0.01 0.1 1.0 10 100 1.0 0.01 , effective transient thja(t) thermal resistance d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse chip junction ambient 0.0106 0.0431 0.1643 0.3507 0.4302 0.0253 f 0.1406 f 0.5064 f 2.9468 f 177.14 f normalized to ja at 10 s
4 motorola bipolar power transistor device data package dimensions case 75105 issue p seating plane 1 4 5 8 c k 4x p a 0.25 (0.010) m tb ss 0.25 (0.010) m b m 8x d r m j x 45 f a b t dim min max millimeters a 4.80 5.00 b 3.80 4.00 c 1.35 1.75 d 0.35 0.49 f 0.40 1.25 g 1.27 bsc j 0.18 0.25 k 0.10 0.25 m 0 7 p 5.80 6.20 r 0.25 0.50 g notes: 1. dimensions a and b are datums and t is a datum surface. 2. dimensioning and tolerancing per ansi y14.5m, 1982. 3. dimensions are in millimeter. 4. dimension a and b do not include mold protrusion. 5. maximum mold protrusion 0.15 per side. 6. dimension d does not include mold protrusion. allowable dambar protrusion shall be 0.127 total in excess of the d dimension at maximum material condition. style 16: pin 1. emitter, die #1 2. base, die #1 3. emitter, die #2 4. base, die #2 5. collector, die #2 6. collector, die #2 7. collector, die #1 8. collector, die #1 motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.; tatsumispdjldc, 6f seibubutsuryucenter, p.o. box 5405, denver, colorado 80217. 3036752140 or 18004412447 3142 tatsumi kotoku, tokyo 135, japan. 81335218315 mfax ? : rmfax0@email.sps.mot.com touchtone 6 022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 internet : http://www.mot.com/sps/ MMDJ3P03BJT/d ?
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