RSM002P03 transistors rev.a 1/4 4v drive pch mosfet RSM002P03 z structure z dimensions (unit : mm) silicon p-channel mosfet z features 1) low on-resistance. 2) small package (vmt3). 3) 4v drive. z applications switching z packaging specifications z inner circuit package code taping basic ordering unit (pieces) RSM002P03 t2l 8000 type z absolute maximum ratings (ta=25 c) ? 1 parameter v v dss symbol v v gss a i d a i dp limits unit drain-source voltage gate-source voltage drain current continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 each terminal mounted on a recommended land ? 30 20 0.2 0.4 ? 2 w p d c tch c tstg total power dissipation channel temperature range of storage temperature 150 ? 55 to + 150 0.15 z thermal resistance parameter c/w rth(ch-a) symbol limits unit channel to ambient 833 ? each terminal mounted on a recommended land ? (1) gate (2) source (3) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (3) (1) (2) (1)gate (2)source (3)drain vmt3 (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 1.2 0.8 0.2 0.2 ( 2 ) ( 1 ) abbreviated symbol : wp
RSM002P03 transistors rev.a 2/4 z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time ? pulsed ? 10 av gs = 20v, v ds =0v ? 30 ?? vi d = ? 1ma, v gs =0v ??? 1 av ds = ? 30v, v gs =0v ? 1.0 ?? 2.5 v v ds = ? 10v, i d = ? 1ma ? 0.9 1.4 i d = ? 0.2a, v gs = ? 10v ? 1.4 2.1 ? ? ? i d = ? 0.15a, v gs = ? 4.5v ? 1.6 2.4 i d = ? 0.15a, v gs = ? 4.0v 0.2 ?? sv ds = ? 10v, i d = ? 0.15a ? 30 ? pf v ds = ? 10v ? 4 5 ? pf v gs = 0v ? 8 ? pf f=1mhz ? 5 ? ns ? 30 ? ns ? 40 ? ns ?? ns v dd ? 15 v i d = ? 0.15a v gs = ? 10v r l = 100 ? r g = 10 ? z body diode characteristics (source-drain) (ta=25 c) v sd ??? 1.2 v i s = ? 0.1a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions
RSM002P03 transistors rev.a 3/4 total gate charge : qg (nc) 0 0 1 2 3 4 5 6 7 8 0.2 0.4 0.6 0.8 1 gate-source voltage : ? v gs (v) fig.3 dynamic input characteristics ta=25 c v dd = ? 15v i d = ? 250ma r g =10 ? pulsed gate-source voltage : ? v gs (v) 0.001 0.01 0.1 1 1.4 1.6 2.0 1.8 2.8 3.0 3.2 3.4 2.2 2.4 2.6 drain current : ? i d (a) fig.4 typical transfer characteristics v ds = ? 10v pulsed ta=125 c 75 c 25 c ? 25 c source-drain voltage : ? v sd (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 reverse drain current : ? i dr (a) fig.6 reverse drain current vs. source-drain voltage v gs =0v pulsed ta=125 c 75 c 25 c ? 25 c gate-source voltage : ? v gs (v) 0 0 15 5 10 20 210 468 19 357 static drain-source on-state resistance : r ds ( ? ) fig.5 static drain-source on-state resistance vs. gate-source voltage ta=25 c pulsed i d = ? 250ma i d = ? 125ma z electrical characteristics curves drain-source voltage : ? v ds (v) 0.01 1 10 100 0.1 1 10 100 capacitance : c (pf) fig.1 typical capacitance vs. drain-source voltage ta=25 c f=1mhz v gs =0v ciss crss coss drain current : ? i d (a) 0.01 1 10 100 1000 0.1 1 switching time : t (ns) fig.2 switching characteristics ta=25 c v dd = ? 15v v gs = ? 10v r g =10 ? pulsed tf td(off) td(on) tr drain current : ? i d (a) 0.01 0.1 0.1 10 1 1 static drain-source on-state resistance : r ds (on) ( ? ) v gs = ? 10v pulsed ta=125 c 75 c 25 c ? 25 c fig.7 static drain-source on-state resistance vs. drain current ( ) drain current : ? i d (a) 0.01 0.1 0.1 10 1 1 static drain-source on-state resistance : r ds (on) ( ? ) v gs = ? 4.5v pulsed ta=125 c 75 c 25 c ? 25 c fig.8 static drain-source on-state resistance vs. drain current ( ? ) drain current : ? i d (a) 0.01 0.1 0.1 10 1 1 static drain-source on-state resistance : r ds (on) ( ? ) v gs = ? 4v pulsed ta=125 c 75 c 25 c ? 25 c fig.9 static drain-source on-state resistance vs. drain current ( ?? )
RSM002P03 transistors rev.a 4/4 drain current : ? i d (a) static drain-source on-state resistance : r ds (on) ( ? ) fig.10 static drain-source on-state resistance vs. drain current ( ) 0.01 0 1 10 0.1 1 ta=25 c pulsed v gs = ? 4v v gs = ? 10v v gs = ? 4.5v
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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