SMG2310N 2.2a, 30v, r ds(on) 65 m ? n-channel enhancement mode mosfet elektronische bauelemente 11-feb-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are lower voltage application, power management in portable and battery-powered products such as computers, prin ters, pcmcia card s, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low gate charge ? fast switch package information package mpq leadersize sc-59 3k 7? inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 8 v continuous drain current 1 i d @ t a =25 c i d 2.2 a i d @ t a =70 c1.7 a pulsed drain current 2 i dm 10 a continuous source current (diode conduction) 1 i s 0.45 a power dissipation 1 p d @ t a =25 c p d 0.5 w p d @ t a =70 c0.42 w operating junction and st orage temperature range tj, tstg -55 ~ 150 c thermal resistance ratings maximum junction to ambient 1 t Q 5 sec r ? ja 250 c / w steady state 285 notes: 1 surface mounted on 1? x 1? fr4 board. 2 pulse width limited by maximum junction temperature. sc-59 ref. millimete r ref. millimete r min. max. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50
SMG2310N 2.2a, 30v, r ds(on) 65 m ? n-channel enhancement mode mosfet elektronische bauelemente 11-feb-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions switch off characteristics drain-source breakdown voltage v (br)dss 30 - - v gs =0, i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs = 8v zero gate voltage drain current i dss - - 1 a v ds =24v, v gs =0 - - 10 v ds =24v, v gs =0, t j =55 c switch on characteristics gate-threshold voltage v gs(th) 0.43 0.7 1 v v ds =v gs , i d =250 a on-state drain current 1 i d(on) 10 - - a v ds =5v, v gs =4.5v drain-source on-resistance 1 r ds(on) - 54 65 m ? v gs =4.5v, i d =2.2a - 80 99 v gs =4.5v, i d =2.2a, t j =55 c - 70 82 v gs =2.5v, i d =2a forward transconductance 1 g fs - 13 - s v ds =5v, i d =2.2a diode forward voltage v sd - 0.65 1.2 v i s =0.45a, v gs =0 dynamic 2 total gate charge q g - 7 9 nc v ds =10v, v gs =4.5v, i d = 2.2a gate-source charge q gs - 1.1 - gate-drain charge q gd - 1.9 - switching turn-on delay time t d(on) - 4 11 ns v ds =10v, v gen =4.5v, r g =6 ? , i d =1a rise time t r - 11 19 turn-off delay time t d(off) - 18 30 fall time t f - 5 10 notes: 1 pulse test pw Q 300 us duty cycle Q 2%. 2 guaranteed by design, not s ubject to production testing.
SMG2310N 2.2a, 30v, r ds(on) 65 m ? n-channel enhancement mode mosfet elektronische bauelemente 11-feb-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
SMG2310N 2.2a, 30v, r ds(on) 65 m ? n-channel enhancement mode mosfet elektronische bauelemente 11-feb-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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