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| inchange semiconductor product specification silicon npn power transistors BU2722AF description ? with to-3pfa package ? high voltage ? high speed switching applications ? for use in horizontal deflection circuits of high resolution monitors pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1700 v v ceo collector-emitter voltage open base 825 v v ebo emitter-base voltage open collector 7.5 v i c collector current (dc) 10 a i cm collector current-peak 25 a i b base current (dc) 10 a i bm base current-peak 14 a p t total power dissipation t c =25 ?? 45 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon npn power transistors BU2722AF characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0,l=25mh 825 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7.5 13.5 v v cesat collector-emitter saturation voltage i c =4.5a ;i b =1.0a 1.0 v v besat base-emitter saturation voltage i c =4.5a ;i b =1.0a 1.0 v i ces collector cut-off current v ce =bv ces; v be =0 t j =125 ?? 1.0 2.0 ma i ebo emitter cut-off current v eb =7.5v; i c =0 1.0 ma h fe-1 dc current gain i c =0.1a ; v ce =5v 22 h fe-2 dc current gain i c =4.5a ; v ce =1v 4.5 10 inchange semiconductor product specification 3 silicon npn power transistors BU2722AF package outline fig.2 outline dimensions (unindicated tolerance: ? 0.30mm) |
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