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| inchange semiconductor product specification silicon npn power transistors 2SC1308 description with to-3 package high voltage low collector saturation voltage applications color tv horizontal output applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 5 v i c collector current 7 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC1308 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ;i b =0 400 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 5 v v cesat collector-emitter saturation voltage i c =6a; i b =1.2a 5.0 v v besat base-emitter saturation voltage i c =6a; i b =1.2a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =5v 8 h fe-2 dc current gain i c =4a ; v ce =5v 3 inchange semiconductor product specification 3 silicon npn power transistors 2SC1308 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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