CPH5541 no.8223-1/5 applications ? mosfet gate drivers, relay drivers, lamp drivers, motor drivers. features ? composite type with a pnp / npn transistor contained in one package, facilitating high-density mounting. ? ultrasmall package permitting applied sets to be small and slim. specifications ( ) : pnp absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--30)40 v collector-to-emitter voltage v ceo (--30)30 v emitter-to-base voltage v ebo (--)5 v collector current i c (--)700 ma collector current (pulse) i cp pw 10 m s (--)3 a collector dissipation p c mounted on a ceramic board (600mm 2 5 0.8m) 0.6 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)30v, i e =0 (--)100 na emitter cutoff current i ebo v eb =(--)4v, i c =0 (--)100 na dc current gain h fe v ce =(--)2v, i c =(--10)50ma (200)300 (500)800 gain-bandwidth product f t v ce =(--)2v, i c =(--)50ma (520)540 mhz output capacitance cob v cb =(--)10v, f=1mhz (4.7)3.3 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)200ma, i b =(--)10ma (--110)85 (--220)190 mv base-to-emitter saturation voltage v be (sat) i c =(--)200ma, i b =(--)10ma (--)0.9 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 m a, i e =0 (--30)40 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)30 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 m a, i c =0 (--)5 v marking : ej continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn8223 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 21005ea ts im tb-00001169 CPH5541 pnp / npn epitaxial planar silicon transistor push-pull circuit applications
CPH5541 no.8223-2/5 continued from preceding page. ratings parameter symbol conditions min typ max unit turn-on time ton see specified test circuit. 35 ns storage time t stg see specified test circuit. (125)255 ns fall time t f see specified test circuit (25)40 ns package dimensions electrical connection unit : mm 2218 switching time test circuit 543 12 top view 1 : collector1 2 : collector2 3 : base2 4 : emitter common 5 : base1 [pnp] [npn] 0 0 --200 --100 i c -- v ce it05049 --400 --300 --600 --500 --700 --200 --600 --400 --800 --1000 --100 --500 --300 --700 --900 i b =0 --500 m a --1ma --2ma --5ma --3ma --7ma --10ma --15ma --40ma --50ma --30ma --20ma --25ma collector-to-emitter voltage, v ce -- mv collector current, i c -- ma 0 0 500 400 300 700 600 200 200 100 500 1000 800 900 100 300 400 600 700 i c -- v ce it05082 i b =0 200 m a 400 m a 1ma 2ma 3ma 5ma 7ma 10ma 50ma 15ma 30ma 20ma collector-to-emitter voltage, v ce -- mv collector current, i c -- ma 1 : collector1 2 : collector2 3 : base2 4 : emitter common 5 : base1 sanyo : cph5 1.6 0.6 0.6 2.8 0.2 2.9 0.05 0.4 0.95 0.2 0.9 0.7 0.15 0.4 12 3 4 5 v r r b v cc =12v v be = --5v + + 50 w input output r l 220 m f 470 m f pw=20 m s i b1 d.c. 1% i b2 20i b1 = --20i b2 =i c =300ma for pnp, minus sign is omitted.
CPH5541 no.8223-3/5 [pnp] [npn] [pnp] [npn] [pnp] [npn] it05051 3 100 h fe -- i c --1.0 2 3 5 7 --10 2 3 5 7 2 3 5 7 --100 --1000 2 3 5 1000 7 5 7 v ce = --2v ta=75 c 25 c --25 c it05054 --1.0 v ce (sat) -- i c 23 57 --10 23 57 23 57 --100 --1000 --1000 --100 2 3 5 7 2 3 5 7 --10 ta=75 c --25 c 25 c i c / i b =20 collector current, i c -- ma dc current gain, h fe collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv it05055 v ce (sat) -- i c --1.0 23 57 --10 23 57 23 57 --100 --1000 --10 3 --1000 2 2 3 5 7 2 3 5 7 --100 ta=75 c --25 c 25 c i c / i b =50 collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv v ce (sat) -- i c it05086 10 100 1000 7 5 3 2 7 5 3 2 1.0 23 5 10 100 1000 7 23 5 7 23 5 7 i c / i b =50 75 c --25 c ta=25 c collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- ma 1.0 10 100 1000 3 2 57 3 2 57 3 2 57 1000 100 2 3 5 7 h fe -- i c it05084 v ce (sat) -- i c it05085 ta=75 c --25 c 25 c v ce =2v 2 3 5 7 2 3 5 7 10 1.0 100 2 3 5 7 1000 1.0 23 5 10 100 1000 7 2357 2357 75 c --25 c ta=25 c i c / i b =20 collector current, i c -- ma dc current gain, h fe collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv [pnp] [npn] it05050 0 0 i c -- v be --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --200 --800 --500 --700 --400 --300 --600 --100 ta=75 c 25 c --25 c v ce = --2v base-to-emitter voltage, v be -- v collector current, i c -- ma 0 300 400 200 800 700 600 500 100 0 0.2 0.4 0.6 0.8 1.0 i c -- v be it05083 ta=75 c --25 c 25 c v ce =2v base-to-emitter voltage, v be -- v collector current, i c -- ma
CPH5541 no.8223-4/5 [pnp] [npn] [pnp] [npn] [pnp] [npn] it05053 --1.0 0.1 cob -- v cb --10 2 3 5 7 2 3 5 2 3 5 7 10 f=1mhz it05052 --1.0 f t -- i c 23 57 23 57 23 57 --10 --100 --1000 100 1000 5 7 2 3 v ce = --10v collector current, i c -- ma gain-bandwidth product, f t -- mhz collector-to-base voltage, v cb -- v output capacitance, cob -- pf f=1mhz --0.1 0.1 base current, i b -- ma ron -- i b on resistance, ron -- w it06403 7 5 3 2 10 7 5 3 2 7 5 3 2 1.0 100 3 2 57 3 2 57 --1.0 --10 out in 1k w 1k w i b it05089 f t -- i c 100 1000 7 3 5 2 10 1.0 100 23 57 23 57 1000 23 57 v ce =10v cob -- v cb it05088 2 10 1.0 7 3 5 1.0 10 23 5 23 5 7 f=1mhz collector current, i c -- ma output capacitance, cob -- pf collector-to-base voltage, v cb -- v gain-bandwidth product, f t -- mhz base current, i b -- ma ron -- i b on resistance, ron -- w f=1mhz 0.1 0.1 it06793 10 7 5 3 2 7 5 3 2 1.0 3 2 57 3 2 57 1.0 10 out in 1k w 1k w i b [pnp] [npn] 2 5 7 --1.0 23 57 --10 23 57 23 57 --100 --1000 it05056 v be (sat) -- i c 3 --1.0 2 5 7 3 --10 --0.1 ta= --25 c 75 c 25 c i c / i b =20 collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- v v be (sat) -- i c it05087 1.0 0.1 10 3 2 5 7 3 2 5 7 1.0 23 5 10 100 1000 7 23 5 7 23 5 7 i c / i b =20 75 c ta= --25 c 25 c collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- v
CPH5541 no.8223-5/5 ps specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of february, 2005. specifications and information herein are subject to change without notice. 0 0 it08993 100 200 300 400 500 600 700 40 20 100 120 60 80 140 160 it08992 2 3 5 7 2 5 0.1 2 3 3 5 7 2 1.0 0.01 23 57 0.1 1.0 23 57 10 23 5 100ms dc operation 100 m s 500 m s 10ms 1ms mounted on a ceramic board (600mm 2 5 0.8mm) ambient temperature, ta -- c p c -- ta collector dissipation, p c -- mw collector-to-emitter voltage, v ce -- v a s o collector current, i c -- a ta=25 c single pulse mounted on a ceramic board (600mm 2 5 0.8mm) for pnp, minus sign is omitted [pnp / npn] [pnp / npn] i cp =3a i c =0.7a
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