? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1200 v v dgr t j = 25 c to 150 c, r gs = 1m 1200 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 0.2 a i dm t c = 25 c, pulse width limited by t jm 0.6 a i a t c = 25 c 0.2 a e as t c = 25 c40mj dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c33w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-220 3.00 g to-252 0.35 g ds100201(10/09) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1200 v v gs(th) v ds = v gs , i d = 100 a 2.0 4.0 v i gss v gs = 20v, v ds = 0v 50 na i dss v ds = v dss , v gs = 0v 1 a t j = 125c 25 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 60 75 polar tm power mosfet n-channel enhancement mode avalanche rated IXTP02N120P ixty02n120p v dss = 1200v i d25 = 0.2a r ds(on) 75 features z international standard packages z avalanche rated z low package inductance advantages z easy to mount z space savings z high power density applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls advance technical information g = gate d = drain s = source tab = drain to-252 (ixty) g s d (tab) to-220 (ixtp) d (tab) g d s
ixys reserves the right to change limits, test conditions, and dimensions. IXTP02N120P ixty02n120p note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain to-220 (ixtp) outline to-252 (ixty) outline pins: 1 - gate 2,4 - drain 3 - source dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 0.2 a i sm repetitive, pulse width limited by t jm 0.8 a v sd i f = i s , v gs = 0v, note 1 1.3 v t rr 1.6 s i rm 3.5 a q rm 2.8 c i f = 0.2a, -di/dt = 50a/ s, v r = 100v, v gs = 0v symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 30v, i d = 0.5 ? i d25 , note 1 0.12 0.20 s c iss 104 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 8.6 pf c rss 1.9 pf t d(on) 6 ns t r 10 ns t d(off) 21 ns t f 39 ns q g(on) 4.70 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 0.37 nc q gd 3.20 nc r thjc 3.8 c/w r thcs to-220 0.50 c/w resistive switching times v gs = 10v, v ds = 60v, i d = 0.5 ? i d25 , r g = 50 (external)
? 2009 ixys corporation, all rights reserved IXTP02N120P ixty02n120p fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 200 02468101214 v ds - volts i d - milliamperes v gs = 10v 7v 6v 5 v 4 v 3 v fig. 2. extended output characteristics @ t j = 25oc 0 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 250 300 350 v ds - volts i d - milliamperes v gs = 10v 8v 7v 5 v 4 v 6 v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 v ds - volts i d - milliamperes v gs = 10v 7v 5 v 4v 6v fig. 4. r ds(on) normalized to i d = 100ma value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 200ma i d = 100ma fig. 5. r ds(on) normalized to i d = 100ma value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 100 200 300 400 500 600 700 800 900 1000 i d - milliamperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 200 220 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - milliamperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTP02N120P ixty02n120p ixys ref: t_02n120p(f2)10-01-09 fig. 7. input admittance 0 50 100 150 200 250 300 350 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v gs - volts i d - milliamperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 i d - milliamperes g f s - millisiemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 100 200 300 400 500 600 700 800 0.3 0.4 0.5 0.6 0.7 0.8 0.9 v sd - volts i s - milliamperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 q g - nanocoulombs v gs - volts v ds = 600v i d = 100ma i g = 1ma fig. 11. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.1 1.0 10.0 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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