1999. 11. 30 1/2 semiconductor technical data bc517 epitaxial planar npn transistor revision no : 1 general purpose high darlington transistor. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. collector 2. base 3. emitter + _ electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 10 v collector current i c 500 ma collector power dissipation p c 625 mw junction temperature t j 150 storage temperature t stg -55 150 characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage v (br)cbo i c =0.1ma, i e =0 40 - - v collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 30 - - v emitter-base breakdown voltage v (br)ebo i e =1.0ma, i c =0 10 - - v collector cut-off current i cbo v cb =40v, i e =0 - - 1.0 a emitter cut-off current i ebo v eb =10v, i c =0 - - 1.0 a dc current gain h fe i c =100ma, v ce =2v 30k - - collector-emitter saturation voltage v ce(sat) i c =100ma, i b =1ma - - 1.0 v base-emitter saturation voltage v be(sat) i c =100ma, i b =1ma - 1.5 2.0 v current gain bandwidth product f t i c =100ma, v ce =2v, f=100mhz - 220 - mhz collector output capacitance c ob v cb =10v, f=1mhz, i e =0 - 5.0 - pf
1999. 11. 30 2/2 bc517 revision no : 1 10 collector current i (ma) c 0 collector-emitter saturation ce(sat) i - v h - i c collector current i (ma) 10 fe dc current gain h 10 collector current i (ma) c base-emitter voltage v (v) be i - v fe c -1 0 10 1 10 2 10 3 10 3 10 10 4 10 5 10 6 ta=125 c ta=25 c ta=-55 c c ce(sat) voltage v (v) 0.20.40.60.81.01.2 0 1 10 2 10 3 10 ta=125 c t a = 25 c ta=-55 c cbe 0 1 10 2 10 3 10 0.8 1.0 1.2 1.4 1.6 1.8 p (mw) 0 c 0 ambient temperature ta ( c) c p - ta collector power dissipation 25 50 75 100 125 150 175 100 200 300 400 500 625 700
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