|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 ! " # $ % &' ( $) * ++ & , -) . / - 0-) ) 1& 2# /& +3 4 ? 5)) / 67221++428 999 ( )$ advanced process technology ultra low on-resistance dual n channel mosfet surface mount available in tape & reel 150c operating temperature lead-free these hexfet ? power mosfet's in a dual so-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of these hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. the efficient so-8 package provides enhanced thermal characteristics and dual mosfet die capability making it ideal in a variety of power applications. this dual, surface mount so-8 can dramatically reduce board space and is also available in tape & reel. so-8 www.irf.com 1 www.irf.com 2 ++ : ." & 999 999 ;4 ? ? : ." & 2# << 999 999 ) / < 24 999 999 4 999 999 5 4 * = =& 999 999 ;4 & '" 999 999 4 999 999 999 999 * ++ '" % .& 999 999 * ++ / - % .& 999 999 + + > * =& 999 999 4 > * ++ =& 999 999 > * ++?@6 @a =& 999 999 ! '&( +b 02 999 (5 999 / 2 999 999 4 +b<< 02 999 999 / ( ? '2 999 !! 999 / ( ?, '& : " # < # # 999 999 b# # 999 5 999 #' / - < # 999 ! 999 c 6de '& 6b'f 028 ?:0 a ="& = & - ?:0 a #+g '" & 999 999 54 / - / - 02 999 ! ! 4 > / - / - 0 =& 999 ( 5 ) 4); '"+b2 / # - &h# "=2 80 27g 2# ? <& a i sd 4) !4); "= ;h00 i !" #$% +2 &&8 ?+2 80% 3% a 999 999 999 999 4 s d g ++ % .& % 999 ( 999 % 999 999 d 4 ;4 ? / ++ b+/ s d g < 2 '/+8 www.irf.com 3 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20s pulse width t = 25c a 4.5v j 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20s pulse width t = 150c a 4.5v j 10 100 45678910 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 15v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 4.0a d www.irf.com 4 !" # $ $ 0 200 400 600 800 1000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 5 10 15 20 25 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 12 i = 2.4a v = 24v d ds 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms www.irf.com 5 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) + - v ds 90% 10% v gs t d(on) t r t d(off) t f 1 !"# 0.1 % !" #% &' / / j !"( ' ) *+ #% 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) i , drain current (a) c d www.irf.com 6 ,$ &' $ d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge -. www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - /(0( 1 *<%&% - - / ? -) 80/ ? - 2 0# j ? 800'@@ ? j+ - j %0 ? %"0 ? * ? %"% .& <2 1 www.irf.com 8 so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l ine conf or ms t o j e de c ou t l i ne ms - 01 2aa. not e s : 1. dimens ioning & t olerancing pe r as me y14.5m-1994. 2. controlling dimension: millimeter 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl ude mol d pr ot r us ions . 6 dime ns ion doe s not incl ude mol d pr ot r us ions . mold protrus ions not t o exceed 0.25 [.010]. 7 dimension is the length of lead for soldering to a s ubst rate. mold protrus ions not t o exceed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx int ernat ional rect ifier logo f 7101 y = last digit of the year part number lot code ww = we e k e xample : t his is an irf 7101 (mos f et ) p = de s i gn at e s l e ad -f r e e product (optional) a = assembly site code notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/ www.irf.com 9 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/2010 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. |
Price & Availability of IRF7303QPBF10 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |