elektronische bauelemente tb2s ~ tb10s voltage 200v ~ 1000v 1.0 amp silicon bridge rectifiers 14-feb-2012 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? glass passivated chip junction ? high surge overload rating 30a peak ? save space on printed circuit boards ? high temperature soldering guaranteed 260c / 10 seconds at 5 lbs. (2.3 kg) tension mechanical data ? case: molded plastic body over passivated junctions ? terminals: plated leads solderable per mil-std-750, method 2026 ? polarity: polarity symbols marked on body dimensions in inches and (millimeters) ? mounting position: any package information package mpq leader size tbs 4k 13 inch maximum ratings and electrical characteristics (rating 25 c ambient temperature unless otherwise specified. single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20% .) part number parameter symbol tb2s tb4s tb6s TB8S tb10s unit maximum recurrent reverse voltage v rrm 200 400 600 800 1000 v maximum rms voltage v rms 140 280 420 560 700 v maximum dc blocking voltage v dc 200 400 600 800 1000 v maximum instantaneous forward voltage @ i fm =0.4a v f 0.95 v 0.8 1 maximum average forward rectified current @ t l =100c i f(av) 1.0 2 a peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 30 a on aluminum substrate 62.5 typical thermal resistance junction to ambient on glass-epoxy substrate r ja 80 typical thermal resistance junction to lead r jl 25 c / w maximum dc reverse current at rated dc blocking voltage@ t a =25c i r 10 a operating & storage temperature range t j ,t stg -55~150 c notes: 1. on glass epoxy p.c.b. 2. on aluminum substrate. tbs millimeter millimeter ref. min. max. ref. min. max. a 4.25 4.55 f 6.30 6.70 b 4.85 5.15 g 0.05 0.15 c 1.15 1.45 h 4.25 4.55 d 0.60 0.70 i 0.50 0.70 e 3.90 4.10 b a c d e + - g h f i
elektronische bauelemente tb2s ~ tb10s voltage 200v ~ 1000v 1.0 amp silicon bridge rectifiers 14-feb-2012 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ratings and characteristic curves
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