unisonic technologies co., ltd 15N06 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2009 unisonic technologies co., ltd qw-r502-260.c n -channel enhancement mode low threshold power mos transistor ? description the utc 15N06 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) < 100m ? @ v gs =5v, i d =7.5a * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 15N06l-ta3-t 15N06g-ta3-t to-220 g d s tube 15N06l-tf3-t 15N06g-tf3-t to-220f g d s tube 15N06l-tn3-r 15N06g-tn3-r to-252 g d s tape reel
15N06 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-260.c ? absolute maximum ratings (ta=25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 60 v drain-gate voltage (r g =20k ? ) v dgr 60 v gate-source voltage v gss 15 v continuous drain current (t c =25c) i d 15 a pulsed drain current (note 2) i dm 60 a avalanche current (note 3) i ar 15 a single pulsed (note 4) e as 50 mj avalanche energy repetitive (note 3) e ar 12 mj to-220 2.2 w to-220f 2.0 w power dissipation (ta=25c) to-252 p d 1.5 w junction temperature t j +175 c storage temperature t stg -65 ~ +175 c note: 1. 2. 3. 4. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by safe operating area. pulse width limited by t j(max) , < 1% starting t j =25c, i d =i ar , v dd =25v ? thermal data parameter symbol min typ max unit to-220 58 c/w to-220f 62 c/w junction to ambient to-252 ja 100 c/w to-220 4.38 c/w to-220f 5 c/w junction to case to-252 jc 3 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 60 v drain-source leakage current i dss v ds =max rating 250 a gate-source leakage current i gss v ds =0v, v gs =15v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250 a 1 1.7 2.5 v on state drain current i d(on) v ds >i d(on) r ds(on)max , v gs =10v 15 a static drain-source on-resistance r ds(on) v gs =5v, i d =7.5a 75 100 m ? forward transconductance (note 1) g fs v ds >i d(on) r ds(on)max , i d =7.5a 3 5 s dynamic parameters input capacitance c iss 700 950 pf output capacitance c oss 230 310 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1mhz 80 110 pf switching parameters total gate charge q g 18 30 nc gate source charge q gs 8 nc gate drain charge q gd v dd =40v, v gs =5v, i d =15a 9 nc turn-on delay time t d(on) 15 60 ns turn-on rise time t r v gs =5v, v dd =30v, r g =4.7 ? , i d =7.5a 160 200 ns turn-off delay time t d(off) 52 80 ns turn-off fall-time t f v gs =10v, v dd =48v, r g =47 ? i d =15a 100 140 ns
15N06 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-260.c ? electrical characteristics parameter symbol test conditions min typ max unit source- drain diode ratings and characteristics diode forward voltage v sd i sd =15 a,v gs =0v(note 1) 1.5 v source-drain current i sd 15 a source-drain current (pulse) i sdm (note 2) 60 a note: 1. pulse width=300 s, duty cycle=1.5% note: 2. pulse width limited by safe operating area
15N06 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-260.c ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + fig. 1a peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period fig. 1b peak diode recovery dv/dt waveforms
15N06 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-260.c ? test circuits and waveforms (cont.) v gs d.u.t. r g 10v v ds r l v dd pulse width 1 s duty factor 0.1% v ds 90% 10% v gs t d(on) t r t d(off) t f fig. 2a switching test circuit fig. 2b switching waveforms 10v charge q gs q gd q g v gs fig. 3a gate charge test circuit fig. 3b gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) fig. 4a unclamped inductive switching test circui t fig. 4b unclamped inductive switching waveforms
15N06 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-260.c ? typical characteristics utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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