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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon pnp power transistor 2SB1007 description collector-emitter breakdown voltage- : v (br)ceo = -80v(min) good linearity of h fe complement to type 2sd1378 applications designed for low frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -80 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current-continuous -0.7 a collector power dissipation @ t c =25 10 p c collector power dissipation @ t a =25 1 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon pnp power transistor 2SB1007 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = -50 a; i e = 0 -80 v v (br)ceo collector-emitter breakdown voltage i c = -2ma; i b = 0 -80 v v (br)ebo emitter-base breakdown vltage i e = -50 a; i c =0 -5 v v ce( sat ) collector-emitter saturation voltage i c = -500ma; i b = -50ma -0.4 v i cbo collector cutoff current v cb = -50v; i e = 0 -0.5 a i ebo emitter cutoff current v eb = -4v; i c = 0 -0.5 a h fe dc current gain i c = -100ma; v ce = -3v 82 390 f t current-gain?bandwidth product i c = -50ma; v ce = -10v 100 mhz c ob output capacitance i e = 0; v cb = -10v, f test = 1mhz 14 pf ? h fe classifications p q r 82-180 120-270 180-390 |
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