2SB1197 pnp silicon epitaxial transistors features ? small package ? mounting:any ? rohs omp onents 20736 marilla street chatsworth
mcc revision: 2 2007/03/01 tm micro commercial components x case material: molded plastic. ul flammability classification rating 94v-0 www. mccsemi .com 1 of 2 sot-23 suggested solder pad layout dimensions inches mm dim min max min max note a .110 .120 2.80 3.04 b .083 .098 2.10 2.64 c .047 .055 1.20 1.40 d .035 .041 .89 1.03 e .070 .081 1.78 2.05 f .018 .024 .45 .60 g .0005 .0039 .013 .100 h .035 .044 .89 1.12 j .003 .007 .085 .180 k .015 .020 .37 .51 a b c d e f g h j .079 2.000 in c h es mm . 03 1 .800 .035 .900 . 03 7 .950 .037 .950 k position compliant e b c maximum ratings @ t a = 25 (unless otherwise noted) symbol parameter value unit i c collector current -0.8 a p d total device dissipation 0.2 w t j junction temperature 150 t stg storage temperature range -55 to +150 electrical characteristics @ 25 o c unless otherwise specified symbol parameter min max units off characteristics v( br )ceo collector-emitter breakdown voltage (i c =-1madc,i b =0) -32 v v( br )cbo collector-base breakdown voltage (i c =-50uadc,i e =0) -40 v v( br )ebo collector-base breakdown voltage (i e =-50uadc,i c =0) -5.0 v i cbo collector-base cutoff current (v cb =-20vdc, i e =0) -0.5 adc i ebo emitter-base cutoff current (v eb =-4.0vdc, i c =0) -0.5 uadc on characteristics h fe dc current gain (i c =-100madc, v ce =-3.0vdc) 82 390 v ce(sat) collector-emitter saturation voltage (i c =-500madc, i b =-50madc) -0.5 vdc f t transition frequency (v ce =-5vdc,i c =-50madc,f=100mhz) 50 mhz classification of h fe rank p q r range 82-180 120-270 180-390 marking ahp ahq ahr 2SB1197-p 2SB1197-q 2SB1197-r
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