high speed. high reliability. suitable for hig packing density layout. ultra high speed switching silicon epitaxial planar type no. marking package code DAN202 n sot-23 maximum rating @ ta=25 unless otherwise specified parameter symbol limits unit non-repetitive peak reverse voltage v rm 80 v dc reverse voltage v r 80 v forward continuous current(single) i fm 300 ma forward continuous current(double) i fm 450 ma average rectified forward current(single) i o 100 ma average rectified forward current(double) i o 150 ma non-repetitive forward surge current @t=1.0us(single) @t=1.0us(double) i surge 4 6 a power dissipation p d 200 mw thermal resistance,junction to ambient air r ja 357 /w junction temperature t j 150 storage temperature range t stg -55 -+150 pb lead-free DAN202 dual surface mount fast switching diode features applications ordering information ? ? ? ? ? dimensions in inches and (millimeters) sot-23 http://www.luguang.cn mail:lge@luguang.cn
electrical characteristics @ ta=25 unless otherwise specified parameter symbol test conditions min max unit reverse voltage leakage current i r v r =70v 0.1 a forward voltage v f i f =100ma 1.2 v total capacitance c t v r =6v,f=1mhz 3.5 pf reverse recovery time t rr i f =5ma,v r =6v, r l =50 ? 4 ns typical characteristics @ ta=25 unless otherwise specified DAN202 dual surface mount fast switching diode http://www.luguang.cn mail:lge@luguang.cn
|
