IS31AP4990D integrated silicon solution, inc. ? www.issi.com 1 rev.a, 11/22/2011 1.2w audio power amplifier with active-low shutdown mode december 2011 description the IS31AP4990D has been designed for demanding audio applications such as mobile phones and permits the reduction of the number of external components. it is capable of delivering 1.2w of continuous rms output power into an 8 ? load @ 5v. an externally-controlled shutdown mode reduces the supply current to less than 1 a. it also includes internal thermal shutdown protection. the unity-gain stable amplifier can be configured by external gain setting resistors. features ? operating from v dd = 2.7v to 5.5v ? 1.2w output power @ v dd = 5v, thd+n= 1%, ? f = 1khz, with 8 ? load ? ultra-low consumption in shutdown mode (1 a) ? near-zero pop & click ? ultra-low distortion ? unity gain stable ? utqfn-9l (1.5mm 1.5mm) package applications ? mobile phones ? pdas ? portable electronic devices ? notebook computer typical application circuit figure 1 typical application circuit copyright ? ? ? 2011 ? integrated ? silicon ? solution, ? inc. ? all ? rights ? reserved. ? issi ? reserves ? the ? right ? to ? make ? changes ? to ? this ? specification ? and ? its ? products ? at ? any ? time ? without ? notice. ? issi ? assumes ? no ? liability ? arising ? out ? of ? the ? application ? or ? use ? of ? any ? information, ? products ? or ? services ? described ? herein. ? customers ? are ? advised ? to ? obtain ? the ? latest ? version ? of ? this ? device ? specification ? before ? relying ? on ? any ? published ? information ? and ? before ? placing ? orders ? for ? products. ? integrated ? silicon ? solution, ? inc. ? does ? not ? recommend ? the ? use ? of ? any ? of ? its ? products ? in ? life ? support ? applications ? where ? the ? failure ? or ? malfunction ? of ? the ? product ? can ? reasonably ? be ? expected ? to ? cause ? failure ? of ? the ? life ? support ? system ? or ? to ? significantly ? affect ? its ? safety ? or ? effectiveness. ? products ? are ? not ? authorized ? for ? use ? in ? such ? applications ? unless ? integrated ? silicon ? solution, ? inc. ? receives ? written ? assurance ? to ? its ? satisfaction, ? that: ? a.) ? the ? risk ? of ? injury ? or ? damage ? has ? been ? minimized; ? b.) ? the ? user ? assume ? all ? such ? risks; ? and ? c.) ? potential ? liability ? of ? integrated ? silicon ? solution, ? inc ? is ? adequately ? protected ? under ? the ? circumstances
IS31AP4990D integrated silicon solution, inc. ? www.issi.com 2 rev.a, 11/22/2011 pin configuration package pin configuration (top view) utqfn-9l pin description no. pin function description a1 in- negative input of the first amplifier. connected to the feedback resistor r f and to the input resistor r i . a2 out- negative output. connected to the load and to the feedback resistor r f . a3 in+ positive input of the first amplifier. b1,b2 gnd ground. b3 vdd supply voltage. c1 bypass bypass capacitor pin which provides the common mode voltage (v dd /2). c2 out+ positive output. connected to the load. c3 sdb the device enters in shutdown mode when a low level is applied on this pin.
IS31AP4990D integrated silicon solution, inc. ? www.issi.com 3 rev.a, 11/22/2011 ordering information industrial range: -40c to +85c order part no. package qty/reel IS31AP4990D-utls2-tr utqfn-9, lead-free 3000
IS31AP4990D integrated silicon solution, inc. ? www.issi.com 4 rev.a, 11/22/2011 absolute maximum ratings (note 1) supply voltage, v dd - 0.3v ~ +6.0v voltage at any input pin - 0.3v ~ v dd +0.3v junction temperature, t jmax - 40c ~ +150c storage temperature range, tstg - 65c ~ +150c operating temperature ratings ? 40c ~ +85c power dissipation (note 2) internally limited note 1: stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note 2: the maximum power dissipation must be derated at elevated temperatures and is dictated by t jmax , ja , and the ambient temperature t a . the maximum allowable power dissipation is p dmax = (t jmax ?t a )/ ja or the number given in absolute maximum ratings, whichever is lower. for the IS31AP4990D, see power derating curves for additional information. electrical characteristics t a = -40c ~ +85c, v dd = 2.7v ~ 5.5v, unless otherwise noted. typical value are t a = +25c. symbol parameter condition min. typ. max. unit v dd power supply 2.7 5.5 v i dd quiescent current v dd = 5v, v in = 0v, i o = 0a, no load 3.8 6.4 ma v dd = 3v, v in = 0v, i o = 0a, no load 2.8 5.1 i sd shutdown current v sdb = gnd, no load 1 a v ih shutdown voltage input high 1.4 v v il shutdown voltage input low 0.4 v v os output offset voltage 25 mv po output power (8 ? ) v dd = 5v thd+n = 1%, f = 1khz 1.20 w thd+n = 10%, f = 1khz 1.50 v dd = 3v thd+n = 1%, f = 1khz 0.418 thd+n = 10%, f = 1khz 0.525 t wu wake-up time (note 3) v dd = 5v, c bypass = 1 f 115 ms v dd = 3v, c bypass = 1 f 102 thd+n total harmonic distortion + noise (note 3) v dd = 5v, p o = 0.5wrms, f = 1khz 0.23 % v dd = 3v, po = 0.3wrms, f = 1khz 0.15 psrr power supply rejection ratio (note 3) v dd = 5v v ripple p-p = 200mv input grounded f = 217hz 61 db f = 1khz 65 v dd = 3.6v, 4.2v v ripple p-p = 200mv input grounded f = 217hz 62 f = 1khz 66 note 3: guaranteed by design.
IS31AP4990D integrated silicon solution, inc. ? www.issi.com 5 rev.a, 11/22/2011 typical performance characteristic thd+n(%) 10m 20m 50m 100m 200m 500m 1 2 output power(w) 20 0.1 0.2 0.5 1 2 5 10 r l = 8 ? f = 1khz v dd = 3v v dd = 5v figure 2 thd+n vs. output power psrr(db) 20 20k 50 100 200 500 1k 2k 5k 10k frequency(h z) -120 +0 -100 -80 -60 -40 -20 v dd = 3.6v, 4.2v r l = 8 ? input grounded figure 4 psrr vs. frequency output voltage(v) 20 20k 50 100 200 500 1k 2k 5k 10k frequency(hz) 10u 20u 30u 50u 70u 100u v dd = 3v, 5v r l = 8 ? figure 6 noise floor 0.01 0.02 0.05 0.1 0.2 1 2 10 thd+n(%) 20 20k 50 100 200 500 1k 2k 5k 10k frequency(h z) 20 r l = 8 ? v dd = 3v p o = 250mw v dd = 5v p o = 800mw figure 3 thd+n vs. frequency psrr(db) 20 20k 50 100 200 500 1k 2k 5k 10k frequency(h z) -120 +0 -100 -80 -60 -40 -20 v dd = 5v r l = 8 ? input float input grounded figure 5 psrr vs. frequency power supply(v) output power(w) 0 0.4 0.8 1.0 1.8 1.4 0.2 0.6 1.2 1.6 2.0 33.544.555.5 r l = 8 ? f = 1khz thd+n = 10% thd+n = 1% figure 7 output power vs. power supply
IS31AP4990D integrated silicon solution, inc. ? www.issi.com 6 rev.a, 11/22/2011 output power(w) efficiency(% 0 10 20 30 40 50 60 70 0 0.2 0.4 0.6 0.8 1 1.2 v dd = 5v r l = 8 ? f = 1khz thd+n<1% figure 8 efficiency vs. output power
IS31AP4990D integrated silicon solution, inc. ? www.issi.com 7 rev.a, 11/22/2011 application information btl configuration principle the IS31AP4990D is a monolithic power amplifier with a btl output type. btl (bridge tied load) means that each end of the load is connected to two single-ended output amplifiers. thus, we have: single-ended output 1 = v out+ = v out (v) single ended output 2 = v out - = -v out (v) and v out+ - v out - = 2v out (v) the output power is: l out out r v p rms 2 ) 2 ( ? for the same power supply voltage, the output power in btl configuration is four times higher than the output power in single ended configuration. gain in a typical application schematic the typical application schematic is shown in figure 1 on page 1. in the flat region (no c in effect), the output voltage of the first stage is (in volts): in f in out r r v v ) ( ? ? ? for the second stage: v out+ = -v out- (v) the differential output voltage is (in volts): in f in out out r r v v v 2 ? ? ? ? the differential gain, g v , in shourt, is given by: in f in in out out v r r v v v v g 2 ? ? ? ? ? v out+ is in phase with v in and v out- is phased 180 with v in . this means that the positive terminal of the loudspeaker should be connected to v out+ and the negative to v out- . low and high frequency response in the low frequency region, c in starts to have an effect. c in forms with r in a high-pass filter with a -3db cut-off frequency. f cl is in hz. in in cl c r f ? 2 1 ? in the high frequency region, you can limit the bandwidth by adding a capacitor (c f ) in parallel with r f . it forms a low-pass filter with a -3db cut-off frequency. f ch is in hz. f f ch c r f ? 2 1 ? decoupling of the circuit two capacitors are needed to correctly bypass the IS31AP4990D: a power supply bypass capacitor c s and a bias voltage bypass capacitor c bypass . c s has particular influence on the thd+n in the high frequency region (above 7khz) and an indirect influence on power supply disturbances. with a value for c s of 1 f, you can expect thd+n levels similar to those shown in the datasheet. in the high frequency region, if c s is lower than 1 f, i t increases thd+n and disturbances on the power supply rail are less filtered. on the other hand, if c s is higher than 1 f, those disturbances on the power supply rail are more filtered. c bypass has an influence on thd+n at lower frequencies, but its function is critical to the final result of psrr (with input grounded and in the lower frequency region). if c bypass is lower than 1 f, thd+n increases at lower frequencies and psrr worsens. if c bypass is higher than 1 f, the benefit on thd+n at lower frequencies is small, but the benefit to psrr is substantial. note that c in has a non-negligible effect on psrr at lower frequencies. the lower the value of c in , the higher the psrr is. wake-up time (t wu ) when the sdb pin is released to put the device on, the bypass capacitor c bypass will not be charged immediately. as c bypass is directly linked to the bias of the amplifier, the bias will not work properly until the c bypass voltage is correct. the time to reach this voltage is called wake-up time or t wu and specified in the electrical characteristics table with c bypass = 1 f. pop performance pop performance is intimately linked with the size of the input capacitor c in and the bias voltage bypass capacitor c bypass . the size of c in is dependent on the lower cut-off frequency and psrr values requested. the size of c bypass is dependent on thd+n and psrr values requested at lower frequencies. moreover, c bypass determines the speed with which the amplifier turns on.
IS31AP4990D integrated silicon solution, inc. ? www.issi.com 8 rev.a, 11/22/2011 classification reflow profiles profile feature pb-free assembly preheat & soak temperature min (tsmin) temperature max (tsmax) time (tsmin to tsmax) (ts) 150c 200c 60-120 seconds average ramp-up rate (tsmax to tp) 3c/second max. liquidous temperature (tl) time at liquidous (tl) 217c 60-150 seconds peak package body temperature (tp)* max 260c time (tp)** within 5c of the specified classification temperature (tc) max 30 seconds average ramp-down rate (tp to tsmax) 6c/second max. time 25c to peak temperature 8 minutes max. figure 9 classification profile
IS31AP4990D integrated silicon solution, inc. ? www.issi.com 9 rev.a, 11/22/2011 tape and reel information note: all dimensions in millimeters unless otherwise stated.
IS31AP4990D integrated silicon solution, inc. ? www.issi.com 10 rev.a, 11/22/2011 packaging information utqfn-9l
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