10v drive nch mosfet RCX450N20 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) high speed switching. 3) gate-source voltage v gss garanteed to be 30v 4) high power package (to-220fm). ? application ? inner circuit switching ? packaging specifications package bulk code - basic ordering unit (pieces) 500 RCX450N20 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 200 v gate-source voltage v gss ? 30 v continuous i d ? 45 a pulsed i dp ? 180 a continuous i s 45 a pulsed i sp 180 a avalanche current i as 22.5 a avalanche energy e as 160 mj power dissipation(tc=25 ? c) p d 40 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 l P 500 ? h, v dd =50v, r g =25 ? , starting tch=25c *3 limited only by maximum temperature allowed. ? thermal resistance symbol limits unit channel to case rth (ch-c) 3.12 ? c / w * t c =25c parameter type source current (body diode) drain current parameter *1 *1 to-220fm 4.5 2.8 0.75 3.2 ( 2 )( 3 )( 1 ) 0.8 2.54 2.6 2.54 1.3 1.2 14.0 12.0 8.02.5 10.0 15.0 (1) gate (2) drain (3) source ? 1 body diode (1) (3) (2) ?1 *3 *3 *2 *2 * 1/6 2011.09 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RCX450N20 symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = ? 30v, v ds =0v drain-source breakdown voltage v (br)dss 200 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =200v, v gs =0v gate threshold voltage v gs (th) 3-5vv ds =10v, i d =1ma forward transfer admittance l y fs l17 - - si d =22.5a, v ds =10v input capacitance c iss - 4200 - pf v ds =25v output capacitance c oss - 270 - pf v gs =0v reverse transfer capacitance c rss - 160 - pf f=1mhz turn-on delay time t d(on) - 52 - ns i d =22.5a, v dd 100v rise time t r - 210 - ns v gs =10v turn-off delay time t d(off) - 90 - ns r l =4.4? fall time t f - 70 - ns r g =10 ? total gate charge q g - 80 - nc i d =45a, gate-source charge q gs - 28 - nc v dd 100v gate-drain charge q gd - 28 - nc v gs =10v *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =45a, v gs =0v *pulsed ? electrical characteristics (ta = 25 ? c) conditions m ? parameter static drain-source on-state resistance r ds (on) i d =22.5a, v gs =10v -4255 parameter conditions * * * * * * * * * * 2/6 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RCX450N20 ? electrical characteristic curves (ta=25 ? c) 0 2 4 6 8 10 12 14 16 18 20 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig. 1 typical output characteristics ( ) v gs = 6.5 v v gs = 10.0 v v gs = 8.0 v v gs = 6.0 v v gs = 7.0 v t a = 25 c pulsed 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig. 2 typical output characteristics ( ) v gs = 10.0 v v gs = 6.5 v v gs = 8.0 v v gs = 6.0 v v gs = 7.0 v t a = 25 c pulsed 0.001 0.01 0.1 1 10 100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 drain current : i d [a] gate - source voltage : v gs [v] fig. 3 typical transfer characteristics v ds = 10 v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150 gate threshold voltage : v gs(th) [v] channel temperature : t ch [ ] fig. 4 gate threshold voltage vs. channel temperature v ds = 10 v i d = 1 ma pulsed 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m w ] drain current : i d [a] fig. 5 static drain - source on - state resistance vs. drain current v gs = 10 v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0 20 40 60 80 100 120 -50 -25 0 25 50 75 100 125 150 static drain - source on - state resistance r ds(on) [m w ] channel temperature : t ch [ ] fig. 6 static drain - source on - state resistance vs. channel temperature v gs = 10 v pulsed i d = 22.5 a i d = 45 a 3/6 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RCX450N20 0.01 0.1 1 10 100 0.01 0.1 1 10 100 forward transfer admittance |y fs | [s] drain current : i d [a] fig. 7 forward transfer admittance vs. drain current v ds = 10 v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 source current : i s [a] source - drain voltage : v sd [v] fig. 8 source current vs. source - drain voltage v gs = 0 v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 30 40 50 60 70 80 90 100 0 2 4 6 8 10 12 14 16 18 20 static drain - source on - state resistance r ds(on) [m w ] gate - source voltage : v gs [v] fig. 9 static drain - source on - state resistance vs. gate - source voltage i d = 22.5 a i d = 45.0 a t a = 25 c pulsed 10 100 1000 0.1 1 10 100 switching time : t [ns] drain current : i d [a] fig. 10 switching characteristics t d(on) t r t d(off) t f v dd P 100 v v gs = 10 v r g = 10 w t a = 25 c pulsed 0 5 10 15 0 20 40 60 80 100 120 gate - source voltage : v gs [v] total gate charge : q g [nc] fig. 11 dynamic input characteristics t a = 25 c v dd = 100 v i d = 45 a pulsed 10 100 1000 10000 0.01 0.1 1 10 100 1000 capacitance : c [pf] drain - source voltage : v ds [v] fig. 12 typical capacitance vs. drain - source voltage t a = 25 c f= 1 mhz v gs = 0 v c iss c oss c rss 4/6 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RCX450N20 10 100 1000 0.1 1 10 100 reverse recovery time : t rr [ns] source current : i s [a] fig. 13 reverse recovery time vs. source current t a = 25 c v gs = 0 v di/dt= 100 a/us pulsed 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 drain current : i d [ a ] drain - source voltage : v ds [ v ] fig. 14 maximum safe operating area t a = 25 c single pulse operation in this area is limited by r ds(on) (v gs = 10 v) p w = 100 s p w = 1 ms p w = 10 ms 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig. 15 normalized transient thermal resistance v.s. pulse width t a = 25 c single pulse rth (ch - a) = 46.0 c /w rth (ch - a) (t)=r(t) rth(ch - a) 5/6 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RCX450N20 ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v ds d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 6/6 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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