72 ics 1-1-4 linear regulator ics features compact surface-mount package (to263-5) output current: 1.0a low dropout voltage: v dif 0.6v (at i o = 1.0a) low circuit current consumption: iq 350 a (600 a for si-3010kd, si-3050kd) low circuit current at output off: iq (off) 1 a built-in overcurrent, thermal protection circuits compatible with low esr capacitors (si-3012kd and si-3033kd) absolute maximum ratings unit v a w c c c/w c/w symbol v in i o p d *2 t j t stg j-a j-c parameter dc input voltage dc output current power dissipation junction temperature storage temperature thermal resistance (junction to ambient air) thermal resistance (junction to case) *1: a built-in input-overvoltage-protection circuit shuts down the output voltage at the input overvoltage shutdown voltage of the electrical characteristics. *2: when mounted on glass-epoxy board of 1600mm 2 (copper laminate area 100%). (t a =25 c) electrical characteristics 1 (low input voltage type compatible with low esr output capacitor) ratings si-3012kd/ 3033kd si-3010kd/3050kd 17 35 *1 1.0 3 ?0 to +125 ?0 to +125 33.3 3 unit v v mv mv v a a mv/ c db a v a a parameter input voltage output voltage (reference voltage for si-3012kd) line regulation load regulation dropout voltage quiescent circuit current circuit current at output off t emperature coefficient of output voltage ripple rejection overcurrent protection starting current *1 control voltage (output on) *2 control voltage (output off) v c control current (output on) t erminal control current (output off) symbol v in v o (v adj ) conditions ? v oline conditions ? v oload conditions v dif conditions conditions i q conditions i q (off) conditions ? v o / ? t a conditions r rej conditions i s1 conditions v c , ih v c , il i c , ih conditions i c , il conditions *1: i s1 is specified at the 5% drop point of output voltage v o under the condition of output voltage parameter. *2: output is off when the output control terminal (v c terminal) is open. each input level is equivalent to ls-ttl level. therefore, the device can be driven directly by ls-ttls. *3: refer to the dropout voltage parameter. *4: v in (max) and i o (max) are restricted by the relation p d = (v in - v o ) i o . please calculate these values referring to the copper laminate area vs. power dissipation data. ratings si-3012kd (variable type) si-3033kd min. typ. max. min. typ. max. 2.4 *3 *4 *3 *4 1.24 1.28 1.32 3.234 3.300 3.366 v in =3.3v, i o =10ma v in =5v, i o =10ma 15 15 v in =3.3 to 8v, i o =10ma (v o =2.5v) v in =5 to 10v, i o =10ma 40 50 v in =3.3v, i o =0 to 1a (v o =2.5v) v in =5v, i o =0 to 1a 0.4 0.4 i o =0.5a (v o =2.5v) i o =0.5a 0.6 0.6 i o =1a (v o =2.5v) i o =1a 350 350 v in =3.3v, i o =0a, v c =2v, r2=2.4k ? v in =5v, i o =0a,v c =2v 11 v in =3.3v, v c =0v v in =5v, v c =0v 0.3 0.3 t j =0 to 100 c (v o =2.5v) t j =0 to 100 c 55 55 v in =3.3v, f=100 to 120h z , i o =0.1a (v o =2.5v) v in =5v, f=100 to 120h z , i o =0.1a 1.1 1.1 v in =3.3v v in =5v 22 0.8 0.8 40 40 v c =2v v c =2v ? 0 5 0 v c =0v v c =0v (t a =25 c, v c =2v, unless otherwise specified) surface-mount, low current consumption, low dropout voltage si-3000kd series applications secondary stabilized power supply (local power supply)
73 ics si-3000kd series electrical characteristics 2 (high input voltage type) *1: refer to the dropout voltage parameter. *2: i s1 is specified at the 5% drop point of output voltage v o under the condition of output voltage parameter. *3: output is off when the output control terminal (v c terminal) is open. each input level is equivalent to ls-ttl level. therefore, the device can be driven directly by ls-ttls. *4: si-3010kd, si-3050kd, cannot be used in the following applications because the built-in foldback-type overcurrent protection may cause errors during start-up stage. (1) constant current load (2) positive and negative power supply (3) series-connected power supply (4) v o adjustment by raising ground voltage *5: v in (max) and i o (max) are restricted by the relation p d = (v in - v o ) ? i o . please calculate these values referring to the copper laminate area vs. power dissipation data as shown hereinafter. external dimensions (to263-5) (unit : mm) pin assignment q v c w v in e gnd (common to the rear side of product) r v o t sense (adj for si-3010kd/3012kd) plastic mold package type flammability: ul94v-0 product mass: approx. 1.48g (0.40) 2.54 0.3 (4.6) 9.2 0.2 1.2 0.2 4.9 0.2 (0.75) 2.0 0.1 15.3 0.3 9.9 0.2 case temperature measurement point (15 ) (0.5) 2-r0.3 10.0 0.02 3-r0.3 (r0.3) (r0.3) 0.88 0.10 1.5 dp: 0.2 (1.7 0.25 ) 12345 (1.7 0.25 ) 0.8 0.1 4.5 0.2 1.3 0.10 0.15 2.4 0.2 +0.10 ?.05 (3 ) (3 ) (3 ) (3 ) (3 ) 0 to 6 15.30 0.3 (6.8) 9.2 0.2 4.9 0.2 (1.75) (2 r0.45) (1.7 0.25 ) (1.7 0.25 ) 0.8 0.1 10.0 0.2 (4.4) (8.0) unit v v mv mv v a a mv/ c db a v a a v pa r ameter input voltage output voltage (reference voltage v adj f or si-3010kd) line regulation load regulation dropout voltage quiescent circuit current circuit current at output off t emperature coefficient of output voltage ripple rejection overcurrent protection starting current *2 *4 control voltage (output on) *3 control voltage (output off) *3 v c control current (output on) te r minal control current (output off) input overvoltage shutdown v oltage symbol v in v o (v adj ) conditions ? v oline conditions ? v oload conditions v dif conditions conditions i q conditions i q (off) conditions ? v o / ? t a conditions r rej conditions i s1 conditions v c , ih v c , il i c , ih conditions i c , il conditions v ovp conditions ratings si-3010kd (variable type) si-3050kd min. typ. max. min. typ. max. 2.4 *1 27 *5 *1 15 *5 0.98 1.00 1.02 4.90 5.00 5.10 v in =7v, i o =10ma v in =7v, i o =10ma 30 30 v in =6 to 11v, v in =6 to 11v, i o =10ma i o =10ma (v o =5v) 75 75 v in =7v, v in =7v, i o =0 to 1a i o =0 to 1a (v o =5v) 0.3 0.3 i o =0.5a (v o =5v) i o =0.5a 0.6 0.6 i o =1a (v o =5v) i o =1a 600 600 v in =7v, i o =0a, v c =2v v in =7v, i o =0a, r2=10k ? v c =2v 11 v in =7v, v c =0v v in =7v, v c =0v 0.5 0.5 t j =0 to 100 c (v o =5v) t j =0 to 100 c 75 75 v in =7v, v in =7v, f=100 to 120hz, i o =0.1a (v o =5v) f=100 to 120hz, i o =0.1a 1.1 1.1 v in =7v v in =7v 2.0 2.0 0.8 0.8 40 40 v c =2v v c =2v ? 0 5 0 v c =0v v c =0v 33 26 i o =10ma i o =10ma
74 ics 1-1-4 linear regulator ics reference data ? higher heat radiation effect can be achieved by enlarging the copper laminate area connected to the inner frame to which a monolithic ics is mounted. obtaining the junction temperature measure the case temperature t c with a thermocouple, etc. then, substitute this value in the following formula to obtain the junction temperature. t j =p d j? + t c ( j? = 3 c/w) p d = (v in v o )? out copper laminate area (on glass-epoxy board) vs. thermal resistance (from junction to ambient temperature) (typical value) 55 50 45 40 35 30 0 200 400 600 800 1000 copper laminate area (mm 2 ) 1200 1400 1600 1800 when using glass-epoxy board of 40 40 mm j unction to ambient temperature thermal resistance j-a ( c/w) block diagram si-3010kd/si-3012kd si-3033kd/si-3050kd 2 v in 1 ref v c v o adj gnd 5 3 4 tsd - + 2 v in 1 ref v c vo sense gnd 5 3 4 tsd - + t ypical connection diagram si-3033kd/si-3050kd si-3010kd/si-3012kd gnd 3 v in c in 2 v o c o 4 v c 1 sense 5 + + d1 *2 *1 load gnd 3 v in c in r1 r2 2 v o 4 v c 1 adj 5 + d1 *2 c o + *1 r3 *3 load c in :i nput capacitor (22 f or larger) c o : output capacitor *1: si-3012kd/3033kd (22 f or larger) co has to be a low esr capacitor such as a ceramic capacitor. when using the electrolytic capacitor, oscillation may occur at a low temperature. si-3010kd/3050kd/ (47 f or larger) if a low esr capacitor is used, oscillation may occur. *2: d1: reverse bias protection diode this diode is required for protection against reverse biasing between the input and output. (sanken sjpl-h2 is recommended.) this diode is not required at v o 3.3v. r1, r2: output voltage setting resistors the output voltage can be set by connecting r1 and r2 as shown above. the recommended value for r2 is 10 ? (24k ? for si-3012kd). r1=(v o ? adj ) (v adj /r2) *3: for si-3010kd, insert r3 in case of setting v o to v o 1.5v. the recommended value for r3 is 10k ? .
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