? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m 800 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c8a i dm t c = 25 c, pulse width limited by t jm 40 a i ar t c = 25 c7a e ar t c = 25 c30mj e as t c = 25 c 1.2 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 5 p d t c = 25 c 130 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms, t = 1, leads-to-tab 2500 v~ f c mounting force 11..65/2.5..15 n/lb weight 2g g = gate d = drain s = source ds99594e(07/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 800 v v gs(th) v ds = v gs , i d = 4 ma 3.0 5.5 v i gss v gs = 30 v, v ds = 0 v 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 7 a 770 m pulse test, t 300 s, duty cycle d 2 % v dss = 800 v i d25 = 8 a r ds(on) 770 m trr 250 ns n-channel enhancement mode avalanche rated fast intrinsic diode isoplus220 tm (ixfc) e153432 g d s (isolated tab) features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low drain to tab capacitance(<30pf) applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control advantages z easy assembly z space savings z high power density ixfc 14n80p polarhv tm hiperfet power mosfet isoplus 220 tm (electrically isolated tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixfc 14n80p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 7 a, pulse test 8 15 s c iss 3900 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 250 pf c rss 19 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 7 a 27 ns t d(off) r g = 5 (external) 75 ns t f 21 ns q g(on) 61 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 7 a 18 nc q gd 20 nc r thjc 0.75 0.95 c/w r thcs 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 14 a i sm repetitive 40 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 250 ns -di/dt = 100 a/ s q rm v r = 100 v, v gs = 0 v 0.4 c i rm 7a isoplus220 tm (ixfc) outline ref: ixys co 0177 r0 note: 1. bottom heatsink (pin 4) is electrically isolated from pin 1, 2, or 3. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2006 ixys all rights reserved ixfc 14n80p fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 0123456789101112 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 3 6 9 12 15 18 21 24 27 0 3 6 9 12 15 18 21 24 27 30 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fig. 3. output characteristics @ 125oc 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 16 18 20 22 24 26 v ds - volts i d - amperes v gs = 10v 6v 5v fig. 4. r ds(on) normalized to i d = 7a value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 14a i d = 7a fig. 5. r ds(on) normalized to i d = 7a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 0 4 8 1216202428 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfc 14n80p fig. 7. input admittance 0 2 4 6 8 10 12 14 16 18 20 3.5 4 4.5 5 5.5 6 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 3 6 9 12 15 18 21 24 27 30 0 2 4 6 8 101214161820 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 35 40 45 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060 q g - nanocoulombs v gs - volts v ds =400v i d = 7a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal resistance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w ixys ref: f_14n80p (8j) 6-22-06.xls
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