n-channel power mosfet semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8886 issue 1 page 1 of 3 SML0505FN low r ds(on) hermetic to-39 metal package. fast switching absolute maximum ratings (t a = 25c unless otherwise stated) v dss drain-source voltage 50v i d drain current ? continuous t c = 25c 16a i dm drain current ? pulsed 150a v gs gate ? source voltage 20v p d total power dissipation at t c = 25c 25w derate above 25c 0.17w/c t j junction temperature range -55 to +150c t stg storage temperature range -55 to +150c thermal properties symbols parameters min. typ. max. units r jc thermal resistance, junction to case 5.8 c/w
n-channel power mosfet SML0505FN semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8886 issue 1 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs = 0 i d = 250 a 50 60 v gs(th) gate threshold voltage v ds = v gs i d = 250 a 2.0 4.0 v i gss gate-source leakage current v gs = 20v v ds = 0v 100 na v ds = 40v v gs = 0 25 i dss zero gate voltage drain current v ds = 40v t c = 125c 250 a r ds(on) (1) static drain-source on-state resistance v gs = 10v i d = 16a 50 m g fs (1) forward transconductance v ds = 15v i d = 16a 6 s (1) pulse test: tp 300 s , 2% dynamic characteristics c iss input capacitance v gs = 0 1500 c oss output capacitance v ds = 25v 53 c rss reverse transfer capacitance f = 1.0mhz 750 pf t d(on) turn-on delay time v dd = 30v 23 t r rise time i d = 16a 130 t d(off) turn-off delay time r g = 5 81 t f fall time 79 ns
n-channel power mosfet SML0505FN semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8886 issue 1 page 3 of 3 mechanical data dimensions in mm (inches) 0.89 (0.035) max. 12.70 (0.500) min. 4.06 (0.16) 4.57 (0.18) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 0.41 (0.016) 0.53 (0.021) dia. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2.54 (0.100) 5.08 (0.200) typ. 45 1 2 3 to - 39 (to - 205af) metal package underside view pin 1 - source pin 2 - gate pin 3/case ? drain
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