STT3599C (n-ch) 3.7 a, 30 v, r ds(on) 63 m ? (p-ch) -2.7 a, -30 v, r ds(on) 112 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 19-jul-2010 rev. a page 1 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ?? g1 s2 g2 d1 s1 d2 6 1 3 2 5 4 rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mo sfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmc ia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe tsop-6 saves board space. ? fast switching speed. ? high performance trench technology. product summary product summary v ds (v) r ds (on) ( ? ? i d (a) 30 0.063@v gs = 10v 3.7 0.090@v gs = 4.5v 3.1 -30 0.112@v gs = -10v -2.7 0.172@v gs = -4.5v -2.2 absolute maximum ratings(t a =25 unless otherwise noted) parameter symbol ratings unit n-channel p-channel drain-source voltage v ds 30 -30 v gate-source voltage v gs 20 20 v continuous drain current a i d @t a =25 i d @t a =70 3.7 -2.7 a 2.9 -2.1 pulsed drain current b i dm 8 -8 a continuous source current (diode conduction) a i s 1.05 -1.05 a power dissipation a p d @t a =25 1.15 w p d @t a =70 0.7 operating junction and st orage temperature range tj, tstg -55 ~ +150 thermal resistance ratings parameter symbol n-channel p-channel unit typ max typ max maximum junction to ambient a t Q 10 sec r ? ja 93 110 93 110 / w steady state 130 150 130 150 notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature. ? ? gate ? ? source ? ? drain ? ? gate ? ? source ? ? drain ref. millimete r ref. millimete r min. max. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e
STT3599C (n-ch) 3.7 a, 30 v, r ds(on) 63 m ? (p-ch) -2.7 a, -30 v, r ds(on) 112 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 19-jul-2010 rev. a page 2 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions gate-threshold voltage n-ch v gs(th) 1 1.6 2.5 v v ds =v gs , i d =250ua p-ch -1 -1.6 -2.5 v ds =v gs , i d = -250ua gate-body leakage current n-ch i gss - 4.5na 100 ua v ds = 0 v, v gs = 20 v p-ch - -4.5na -100 v ds = 0 v, v gs = -20 v zero gate voltage drain current n-ch i dss - 12na 1 ua v ds =24 v, v gs =0 v p-ch - -12na -1 v ds =-24v, v gs =0 v n-ch - - 10 v ds =24v, v gs =0 v, t j =55 p-ch - - -10 v ds = -24v, v gs =0 v, t j =55 on-state drain current a n-ch i d(on) 5 - - a v ds = 5v, v gs =10 v p-ch -5 - - v ds = -5v, v gs = -10 v drain-source on-resistance a n-ch r ds(on) - 0.057 0.063 ? v gs =10v, i d = 3.7a p-ch - 0.100 0.112 v gs =-10v, i d = -2.7a n-ch - 0.075 0.090 v gs =4.5v, i d = 3.1a p-ch - 0.148 0.172 v gs =-4.5v, i d = -2.2a forward transconductance a n-ch g fs - 10 - s v ds = 5v, i d = 3.7a p-ch - 5 - v ds = -5v, i d = 3.1a diode forward voltage a n-ch v sd - 0.80 - s i s = 1.05a, v gs = 0v p-ch - -0.83 - i s = -1.05a, v gs = 0v
STT3599C (n-ch) 3.7 a, 30 v, r ds(on) 63 m ? (p-ch) -2.7 a, -30 v, r ds(on) 112 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 19-jul-2010 rev. a page 3 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. dynamic b total gate charge n-ch q g - 2.2 5 nc n-channel v ds =15v, v gs = 4.5v, i d = 2.7a p-channel v ds = -15v, v gs = -4.5v, i d = -3.1a p-ch - 3.8 8 gate-source charge n-ch q gs - 0.5 1 p-ch - 0.6 2 gate-drain charge n-ch q gd - 0.8 2 p-ch - 1.5 3 input capacitance n-ch c iss - 184 400 pf n-channel v ds = 15v, v gs = 0v, f= 1mhz p-channel v ds = -15v, v gs = 0v, f= 1mhz p-ch - 378 800 output capacitance n-ch c oss - 62 200 p-ch - 126 300 reverse transfer capacitance n-ch c rss - 30 200 p-ch - 52 300 turn-on delay time n-ch t d(on) - 5 10 ns n-channel v dd = 15v, r gen = 15 , v gs = 4.5v, i d = 1a p-channel v dd = -15v, r gen = 15 v gs = -4.5v, i d = -1a p-ch - 5 10 rise time n-ch t r - 12 30 p-ch - 15 30 turn-off delay time n-ch t d(off) - 13 30 p-ch - 20 40 fall time n-ch t f - 7 20 p-ch - 20 40 notes a. pulse test pw Q 300 us duty cycle Q 2%. b. guaranteed by design, not su bject to production testing.
STT3599C (n-ch) 3.7 a, 30 v, r ds(on) 63 m ? (p-ch) -2.7 a, -30 v, r ds(on) 112 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 19-jul-2010 rev. a page 4 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves (n-channel)
STT3599C (n-ch) 3.7 a, 30 v, r ds(on) 63 m ? (p-ch) -2.7 a, -30 v, r ds(on) 112 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 19-jul-2010 rev. a page 5 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually.
STT3599C (n-ch) 3.7 a, 30 v, r ds(on) 63 m ? (p-ch) -2.7 a, -30 v, r ds(on) 112 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 19-jul-2010 rev. a page 6 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves (p-channel)
STT3599C (n-ch) 3.7 a, 30 v, r ds(on) 63 m ? (p-ch) -2.7 a, -30 v, r ds(on) 112 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 19-jul-2010 rev. a page 7 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed individually.
|