utc 2sa1700 pnp epitaxial silicon transistor utc unisonic technologies co. ltd 1 qw-r209-009,a high voltage driver application features *high breakdown voltage. *excellent h fe linearity. to-252 1 1: base 2:collector 3:emitter absolute maximum ratings ( ta=25 c) parameter symbol rating unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltage v ebo -5 v collector current ic -200 ma collector current (pulse) icp -400 ma 1 w collector power dissipation pc 10( tc=25 c) w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c = -10 a,i e =0 -400 v collector-emitter breakdown voltage bv ceo i c = -1ma, i b =0, r be = -400 v emitter-base breakdown voltage bv ebo i e = -10 a,i c =0 -5 v collector cutoff current i cbo v cb = -300v,i e =0 -0.1 a emitter cutoff current i ebo v eb = -4v,i c =0 -0.1 a dc current transfer ratio hfe v ce = -10v, ic= -50ma 60 200 collector-emitter saturation voltage v ce(sat) i c = -50ma,i b = -5ma -0.8 v base-emitter saturation voltage v be(sat) i c = -50ma,i b = -5ma -1.0 v output capacitance cob v cb = -30v,f=1mhz 5 pf reverse transfer capacitance cre v cb = -30v,f=1mhz 4 pf
utc 2sa1700 pnp epitaxial silicon transistor utc unisonic technologies co. ltd 2 qw-r209-009,a parameter symbol test conditions min typ max unit gain-bandwidth product f t v ce = -30v,i c = -10ma 70 mhz turn-on time ton see test circuit 0.25 s turn-off time toff see test circuit 5 s classification of hfe rank d e range 60-120 100-200 test circuit (unit : (resistance : ? , capacitance : f) electrical characteristics curves i(tot) ma -20 0 0 -40 -60 -0.8 -1.2 -1.4 i c -v be base to emitter voltage,v be -v collector current,ic-ma -1.0 -80 -0.2 -0.4 -0.6 -100 -120 v ce = -10v t a = -30 t a =25 t a =70 7 hfe-ic dc current gain,hfe 5 2 2 collector current,ic- ma 3 5 7 100 3 5 7 10 v ce = -10v -1.0 2 3 57 -100 23 5 7 -10 23 t a = -30 t a =25 t a =70 input output -10i b 1= 10i b 2=ic= -50ma r l =3k ,r b =200 at ic= -50ma pw=20 s duty cycle Q 1% i b 1 i b 2rl 50 v be = 1v 100 + 470 + v r r b v cc = -150v
utc 2sa1700 pnp epitaxial silicon transistor utc unisonic technologies co. ltd 3 qw-r209-009,a collector current , ic ma switch time -ic switching time,sw time- s 5 2 collector current,ic- ma 3 5 7 1.0 7 0.1 3 57 -100 23 5 7 -10 23 2 3 5 7 10 5 tstg ton tf aso 5 2 collector to emitter voltage,v ce -v 3 5 -10 -1.0 357 -100 23 5 7 -10 23 5 c o l l e c t o r c u r r e n t , i c - m a 2 3 5 -100 2 3 5 -1000 icp ic 10ms 100ms 1ms d c o p e r a t i o n ( t c = 2 5 ) 7 v ce (sat)-ic collector to emitter saturation voltage,v ce (sat)-v 5 2 2 collector current,ic- ma 3 5 7 -1.0 3 5 7 -0.1 ic/i b =10 -1.0 2 3 57 -100 23 5 7 -10 2 t a =25 t a =70 7 2 collector current,ic- ma 3 5 7 -1.0 3 5 -1.0 2 3 57 -100 23 5 7 -10 23 7 v be (sat)-ic base to emitter saturation voltage,v be (sat)-v ic/i b =10 t a =75 t a =-30 t a =25 t a =-30 2 -10 2 -1.0 v cc =-150v 10ib1=-10ib2=ic ta=25 2 d c o p e r a t i o n ( t a = 2 5 ) t c =25 60 40 20 0 80 140 120 100 8 10 12 pc -ta ambient temperature, 6 2 4 0 collector dissipation,pc -w ta - no heat sink 160
utc 2sa1700 pnp epitaxial silicon transistor utc unisonic technologies co. ltd 4 qw-r209-009,a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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