april 2012 ?2012 fairchild semiconductor corporation FDMA910PZ rev.c2 www.fairchildsemi.com 1 FDMA910PZ single p-channel powertrench ? mosfet FDMA910PZ single p-channel powertrench ? mosfet -20 v, -9.4 a, 20 m features ? max r ds(on) = 20 m at v gs = -4.5 v, i d = -9.4 a ? max r ds(on) = 24 m at v gs = -2.5 v, i d = -8.6 a ? max r ds(on) = 34 m at v gs = -1.8 v, i d = -7.2 a ? low profile - 0.8 mm maximum in the new package microfet 2x2 mm ? hbm esd protection level > 2.8k v typical (note 3) ? free from halogenated compounds and antimony oxides ? rohs compliant general description this device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.it features a mosfet with low on-state resistance and zener diode protection against esd. the microfet 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. d d s g d d pin 1 drain source microfet 2x2 (bottom view) 5 1 6 2 3 4 d d s d d g bottom drain contact mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -20 v v gs gate to source voltage 8 v i d -continuous t a = 25c (note 1a) -9.4 a -pulsed -45 p d power dissipation t a = 25c (note 1a) 2.4 w power dissipation t a = 25c (note 1b) 0.9 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 52 c/w r ja thermal resistance, junction to ambient (note 1b) 145 device marking device package reel size tape width quantity 910 FDMA910PZ microfet 2x2 7? 12mm 3000 units
FDMA910PZ single p-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2012 fairchild semiconductor corporation FDMA910PZ rev.c2 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = -250 a, v gs = 0 v -20 v bv dss t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25 c -12 mv/c i dss zero gate voltage drain current v ds = -16 v, v gs = 0 v -1 a i gss gate to source leakage current v gs = 8 v, v ds = 0 v 1 a v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 a -0.4 -0.5 -1.5 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = -250 a, referenced to 25 c 3 mv/c r ds(on) static drain to source on resistance v gs = -4.5 v, i d = -9.4 a 16 20 m v gs = -2.5 v, i d = -8.6 a 19 24 v gs = -1.8 v, i d = -7.2 a 24 34 v gs = -4.5 v, i d = -9.4 a, t j = 125 c 20 25 g fs forward transconductance v dd = -5 v, i d = -9.4 a 52 s c iss input capacitance v ds = -10 v, v gs = 0 v, f = 1 mhz 2110 2805 pf c oss output capacitance 414 620 pf c rss reverse transfer capacitance 388 580 pf t d(on) turn-on delay time v dd = -10 v, i d = -9.4 a, v gs = -4.5 v, r gen = 6 9.4 19 ns t r rise time 19 34 ns t d(off) turn-off delay time 135 216 ns t f fall time 103 165 ns q g total gate charge v gs = -4.5 v, v dd = -10 v, i d = -9.4 a 21 29 nc q gs gate to source charge 2.5 nc q gd gate to drain ?miller? charge 6 nc v sd source to drain diode forward voltage v gs = 0 v, i s = -2 a (note 2) -0.6 -1.2 v v gs = 0 v, i s = -9.4 a (note 2) -0.8 -1.2 v t rr reverse recovery time i f = -9.4 a, di/dt = 100 a/ s 23 37 ns q rr reverse recovery charge 6.3 13 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ja is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. the diode connected between the gate and source serves only as protection against esd. no gate overvoltage rating is implied . a. 52 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 145 c/w when mounted on a minimum pad of 2 oz copper.
FDMA910PZ single p-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2012 fairchild semiconductor corporation FDMA910PZ rev.c2 typical characteristics t j = 25 c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 0 15 30 45 v gs = -1.5 v v gs = -4.5 v v gs = -2.5 v v gs = -1.8 v v gs = -3.5 v pulse duration = 80 p s duty cycle = 0.5% max -i d , drain current (a) -v ds , drain to source voltage (v) on-region characteristics figure 2. 01 53 04 5 0 1 2 3 v gs = -2.5 v v gs = -1.8 v v gs = -3.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance - i d , drain current (a) v gs = -4.5 v v gs = -1.5 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 1.3 1.4 i d = -9.4 a v gs = -4.5 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 1.01.52.02.53.03.54.04.5 0 15 30 45 60 t j = 125 o c i d = -9.4 a t j = 25 o c - v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.5 1.0 1.5 2.0 0 15 30 45 t j = 25 o c v ds = -5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 150 o c -i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMA910PZ single p-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2012 fairchild semiconductor corporation FDMA910PZ rev.c2 figure 7. 0 5 10 15 20 25 0.0 1.5 3.0 4.5 i d = -9.4 a v dd = -12 v v dd = -8 v -v gs , gate to source voltage (v) q g , gate charge (nc) v dd = -10 v gate charge characteristics figure 8. 0.1 1 10 20 100 1000 5000 f = 1 mhz v gs = 0 v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 03691215 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 v ds = 0 v t j = 125 o c t j = 25 o c -v gs , gate to source voltage (v) -i g , gate leakage current (a) g a t e l e a k a g e c u r r e n t v s g a t e t o source voltage figure 10. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 this area is limited by r ds(on) 100 p s 1 ms 100 ms 1 s dc 10 s 10 ms single pulse t j = max rated r t ja = 145 o c/w t a = 25 o c -i d , drain current (a) -v ds , drain to source voltage (v) f o r w a r d b i a s s a f e operating area figure 11. single pulse maximum power dissipa tion 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.5 1 10 100 1000 p (pk) , peak transient power (w) single pulse r t ja = 145 o c/w t a = 25 o c t, pulse width (sec) typical characteristics t j = 25 c unless otherwise noted
FDMA910PZ single p-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2012 fairchild semiconductor corporation FDMA910PZ rev.c2 figure 12. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 2 single pulse r t ja = 145 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
FDMA910PZ single p-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2012 fairchild semiconductor corporation FDMA910PZ rev.c2 b. dimensions are in millimeters. c. dimensions and tolerances per a. does not fully conform to jedec registration asme y14.5m, 1994 0.10 cab 0.05 c recommended land pattern opt 1 0.10 c 0.08 c c 2.000 2.000 0.05 0.00 0.10 c 2x 2x 0.8 max seating plane 0.10 c (0.20) 0.33 0.20 1 3 4 6 4 6 3 1 pin #1 ident 0.65 1.30 1.35 (0.47) 1.05 0.40 typ 0.65 typ 0.25~0.35 1.000 0.800 2.30 1.00 mo-229 dated aug/2003 (0.56) (0.30) 0.66 recommended land pattern opt 2 4 6 3 1 1.35 (0.47) 1.05 0.40 typ 0.65 typ 2.30 1.00 0.66 no drain or gate traces allowed in this area pin#1 location 1.05 0.95 d. drawing filename: mkt-mlp06lrev2. dimensional outline and pad layout
7 www.fairchildsemi.com FDMA910PZ single p-channel powertrench ? mosfet ?2012 fairchild semiconductor corporation FDMA910PZ rev.c2 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * p serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing de lays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages cu stomers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our custom ers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i61 ?
|
