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silicon rf power semiconductors rd00hhs1 rohs compliance, silicon mosfet power transistor 30mhz,0.3w rd00hhs1 17 aug 2010 1/7 electrostatic sensitive device observe handling precautions description rd00hhs1 is a mos fet ty pe transistor specifically designed for hf rf amplifiers applications. features high power gain pout>0.3w, gp>19db @vdd=12.5v,f=30mhz application for output stage of high power amplifiers in hf band mobile radio sets. rohs compliant rd00hhs1-101,t113 is a rohs compliant products. this product includes the lead in high melting temperature type solders. how ever, it applicable to the followi ng exceptions of rohs directions. 1.lead in high melting temperature type solders (i.e.ti n-lead solder alloys cont aining more than85% lead.) absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit v dss drain to source voltage vgs=0v 30 v v gss gate to source voltage vds=0v 10 v pch channel dissipation tc=25 c 3.1 w pin input power zg=zl=50 ? 10 mw id drain current - 200 ma tch channel temperature - 150 c tstg storage temperature - -40 to +125 c rth j-c thermal resistance junction to case 40 c/w note 1: above paramet ers are guaranteed independently. electrical characteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zero gate voltage drain current v ds =17v, v gs =0v - - 25 ua i gss gate to source leak current v gs =10v, v ds =0v - - 1 ua vth gate threshold voltage v ds =12v, i ds =1ma 1 2 3 v pout output power 0.3 0.7 - w d drain efficiency v dd =12.5v, pin=4mw, f=30mhz,idq=50ma 55 65 - % note : above parameters , ratings , lim its and conditions are subject to change. outline drawing lot no. 0.4+/-0.07 123 0.4+/-0.07 0.8 min 0.5+/-0.07 1.5+/-0.1 0.1 max 1.5+/-0.1 2.5+/-0.1 type name 1.6+/-0.1 0. 1 4.4+/-0.1 +0.03 -0.05 terminal no. 1 : gate 2 : sourse 3 : drain unit : mm 0.4 1.5+/-0.1 3.9+/-0.3
silicon rf power semiconductors rd00hhs1 rohs compliance, silicon mosfet power transistor 30mhz,0.3w rd00hhs1 17 aug 2010 2/7 electrostatic sensitive device observe handling precautions typical characteristics channel dissipat ion v s. ambient temperature 0 1 2 3 4 0 40 80 120 160 200 a mbient tempera ture ta ( c) channel dissipation pch(w ) ... on pcb(*1) on pcb(*1) with heat-sink *1:the material of the pcb glass epoxy (t=0.6 mm) vgs-ids characteristics 0.0 0.1 0.2 0.3 0.4 0.5 0.6 01 23 45 vgs(v) ids(a) ta=+ 25c vds=10v vds-ids characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0246810 vds(v) ids(a) ta=+25c vg s=9v vg s=8v vg s=7v vg s=6v vg s=5v vg s=4v vg s=3v vg s=10v vds vs. ciss characteristics 0 5 10 15 20 0 5 10 15 20 vds(v) ciss(pf) ta=+25c f=1mhz vds vs. coss characteristics 0 5 10 15 20 0 5 10 15 20 vds(v) coss(pf) ta=+25c f=1mhz vds vs. crss characteristics 0 1 2 3 4 0 5 10 15 20 vds(v) crss(pf) ta=+25c f=1mhz silicon rf power semiconductors rd00hhs1 rohs compliance, silicon mosfet power transistor 30mhz,0.3w rd00hhs1 17 aug 2010 3/7 electrostatic sensitive device observe handling precautions typical characteristics pin-po characteristics 10 15 20 25 30 35 -20 -15 -10 -5 0 5 10 pin(dbm) po(dbm) , gp(db) , idd(a) 0 20 40 60 80 100 d(%) ta=+25c f=30mhz vdd=12.5v idq=50ma po 3 gp pin-po characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0246810 pin(mw) pout(w) , idd(a) 40 50 60 70 80 90 100 d(%) po d idd ta=25c f=30mhz vdd=12.5v idq=50ma vdd-po characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2468101214 vdd(v) po(w) 0 40 80 120 idd(ma) po idd ta=25c f=30mhz pin=4mw icq=50ma zg=zi=50 ohm vgs-ids charactoristics 2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 012345 vgs(v) ids(a) vds=10v tc=-25~+75c -25c +75c +25c vgs-gm charactoristics 0.0 0.1 0.2 0.3 0.4 0.5 0.6 012345 vgs(v) gm(s) vds=10v tc=-25~+75c -25c +75c +25c silicon rf power semiconductors rd00hhs1 rohs compliance, silicon mosfet power transistor 30mhz,0.3w rd00hhs1 17 aug 2010 4/7 electrostatic sensitive device observe handling precautions test circuit(f=30mhz) 3 % ) ) 4 n n - q ' q ' n n q ' 1 j o q ' 7 e e 7 h h - - " - / " 3 ) n n n n $ l 1 p v u $ $ q ' ' ' j o q b s b m m f m / p u f # p b s e n b u f s j b m h m b t t f q p y j t v c t u s b u f n j d s p t u s j q m j o f x j e u i n n |