regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
feb.1999 6.5 2.3 2.3 0.9max. 1.0max. 2.3 1.0 0.5 0.1 5.5 0.2 10max. 2.3min. 1.5 0.2 0.5 0.2 0.8 5.0 0.2 a q gate w drain e source r drain wr q qwe r e FS50AS-03 outline drawing dimensions in mm mp-3 mitsubishi nch power mosfet FS50AS-03 high-speed switching use application motor control, lamp control, solenoid control dc-dc converter, etc. 30 20 50 200 50 50 200 35 C55 ~ +150 C55 ~ +150 0.26 v gs = 0v v ds = 0v l = 30 m h typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche drain current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature weight v v a a a a a w c c g v dss v gss i d i dm i da i s i sm p d t ch t stg symbol maximum ratings (tc = 25 c) parameter conditions ratings unit 10v drive v dss .................................................................................. 30v r ds (on) (max) .............................................................. 23m w i d ......................................................................................... 50a integrated fast recovery diode (typ.) ............. 60ns
feb.1999 mitsubishi nch power mosfet FS50AS-03 high-speed switching use electrical characteristics (tch = 25 c) 0 10 20 30 40 50 0 20050 100 150 power dissipation derating curve case temperature t c (?) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) 10 0 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 0 357 2 10 1 357 2 10 2 357 2 3 23 tw = 10 m s t c = 25? single pulse 100 m s 10ms 1ms dc 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2.0 v gs = 20v 10v 8v 5v 6v t c = 25? pulse test p d = 35w 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0 v gs = 20v 7v 6v 4v 5v t c = 25? pulse test 10v v (br) dss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) t rr v m a ma v m w v s pf pf pf ns ns ns ns v c/w ns 30 2.0 3.0 17 0.425 23 1300 500 240 25 120 55 68 1.0 60 0.1 0.1 4.0 23 0.575 1.5 3.57 drain-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v v gs = 20v, v ds = 0v v ds = 30v, v gs = 0v i d = 1ma, v ds = 10v i d = 25a, v gs = 10v i d = 25a, v gs = 10v i d = 25a, v ds = 10v v ds = 10v, v gs = 0v, f = 1mhz v dd = 15v, i d = 25a, v gs = 10v, r gen = r gs = 50 w i s = 25a, v gs = 0v channel to case i s = 25a, dis/dt = C50a/ m s performance curves
feb.1999 mitsubishi nch power mosfet FS50AS-03 high-speed switching use 0 20 40 60 80 100 0 4 8 12 16 20 t c = 25? v ds = 10v pulse test on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) (m w ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) drain current i d (a) forward transfer admittance y fs (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) 10 0 10 1 23457 10 2 23457 10 0 10 1 2 3 4 5 7 10 2 2 3 4 5 7 t c = 25? v ds = 10v pulse test 75? 125? 10 2 3 5 7 10 3 2 3 5 7 10 4 2 3 2 5 7 10 0 210 1 357357 2 10 2 357 23 2 tch = 25? f = 1mh z v gs = 0v ciss coss crss 0 1.0 2.0 3.0 4.0 5.0 0 4 8 12 16 20 t c = 25? pulse test 30a 50a i d = 80a 0 10 20 30 40 50 10 0 210 1 357 2 10 2 357 2 10 3 357 v gs = 10v 20v t c = 25? pulse test 10 0 10 1 23457 10 2 23457 10 1 10 2 2 3 4 5 7 10 3 2 3 4 5 7 tch = 25? v dd = 15v v gs = 10v r gen = r gs = 50 w t d(off) t d(on) t f t r
feb.1999 mitsubishi nch power mosfet FS50AS-03 high-speed switching use gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch (?) drain-source on-state resistance r ds (on) (t?) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch (?) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch?) (?/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25?) channel temperature tch (?) drain-source breakdown voltage v (br) dss (t?) drain-source breakdown voltage v (br) dss (25?) 10 ? 10 0 2 3 4 5 7 10 1 2 3 4 5 7 ?0 0 5 0 100 150 v gs = 10v i d = 1/2i d pulse test 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 5 0 100 150 v gs = 0v i d = 1ma 0 4 8 12 16 20 0 1020304050 v ds = 10v tch = 25? i d = 50a 20v 25v 0 25 50 75 100 0 0.4 0.8 1.2 1.6 2.0 v ds = 0v pulse test t c = 125? 75? 25? 0 1.0 2.0 3.0 4.0 5.0 ?0 0 5 0 100 150 v ds = 10v i d = 1ma 10 ? 10 ? 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? p dm tw d = t tw t d = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 single pulse
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