stp stp stp stp 4403 4403 4403 4403 p channel enhancement mode mosfet - 10.0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stp 4403 20 1 0. v1 description description description description st p4403 is the p-channel logic enhancement mode power field effect transistor s are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application , such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. pin pin pin pin configuration configuration configuration configuration sop-8 sop-8 sop-8 sop-8 part part part part marking marking marking marking sop-8 sop-8 sop-8 sop-8 y:year y:year y:year y:year code code code code a:process a:process a:process a:process code code code code feature feature feature feature ? - 20 v/- 10.0 a, r ds(on) = 20 m @v gs = - 4.5 v ? - 20 v/- 8.6 a, r ds(on) = 25 m @v gs = - 2.5 v ? - 20 v/- 7.6 a, r ds(on) = 35 m @v gs = - 1.8 v ? super high density cell design for extremely low r ds(on) ? exceptional on-resistance and maximum dc current capability ? sop-8 package design
stp stp stp stp 4403 4403 4403 4403 p channel enhancement mode mosfet - 10.0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stp 4403 20 1 0. v1 absoulte absoulte absoulte absoulte maximum maximum maximum maximum ratings ratings ratings ratings (ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol typical typical typical typical unit unit unit unit drain-source voltage vdss - 20 v gate-source voltage vgss 12 v continuous drain current (tj=150 ) ta=25 ta=70 id - 10.0 - 8.0 a pulsed drain current idm -30 a continuous source current (diode conduction) is -2.3 a power dissipation ta=25 ta=70 pd 2 .8 1 .8 w operation junction temperature tj -55/ 150 storgae temperature range tstg -55/150 thermal resistance-junction to ambient r ja 70 /w
stp stp stp stp 4403 4403 4403 4403 p channel enhancement mode mosfet - 10.0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stp 4403 20 1 0. v1 electrical electrical electrical electrical characteristics characteristics characteristics characteristics ( ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol condition condition condition condition min min min min typ typ typ typ max max max max unit unit unit unit static static static static drain-source breakdown voltage v (br)dss v gs =0v,id=-250ua - 20 v gate threshold voltage v gs(th) v ds =v gs ,id=- 2 50ua -0.35 - 0.9 v gate leakage current i gss v ds =0v,v gs = 12 v 10 0 na zero gate voltage drain current i dss v ds =- 16 v,v gs =0v -1 ua v ds =- 20 v,v gs =0v t j = 5 5 - 10 on-state drain current i d(on) v ds = -5v,v gs =-4.5v - 20 a drain-source on- resistance r ds(on) v gs =- 4.5 v,i d = - 10 a v gs =- 2.5 v,i d =- 8.6 a v gs =- 1.8 v,i d =- 7.6 a 16 20 28 20 25 35 m forward transconductance gfs v ds =- 5.0 v,i d =- 10a 36 s diode forward voltage v sd i s =-2. 5 a,v gs =0v - 0.8 -1.2 v dynamic dynamic dynamic dynamic total gate charge q g v ds =-1 0 v,v gs =- 5 v i d - 10.0 a 30 45 nc gate-source charge q gs 4.5 gate-drain charge q gd 8.0 input capacitance c iss v ds ==-1 0 v,vgs=0v f=1mhz 2670 pf output capacitance c oss 520 reverse transfer c apacitance c rss 480 turn-on time t d(on) tr v dd =-1 0 v,r l =15 i d =-1a,v gen =- 4.5 v r g =6 25 40 ns 45 70 turn-off time t d(off) tf 145 240 70 115
stp stp stp stp 4403 4403 4403 4403 p channel enhancement mode mosfet - 10.0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stp 4403 20 1 0. v1 typical typical typical typical characterictics characterictics characterictics characterictics
stp stp stp stp 4403 4403 4403 4403 p channel enhancement mode mosfet - 10.0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stp 4403 20 1 0. v1 typical typical typical typical characterictics characterictics characterictics characterictics
stp stp stp stp 4403 4403 4403 4403 p channel enhancement mode mosfet - 10.0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stp 4403 20 1 0. v1 package package package package outline outline outline outline sop-8p sop-8p sop-8p sop-8p
|
