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document number: 93495 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 18-mar-11 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual mode pfc, 60 a vs-EMG050J60N vishay semiconductors features ? npt warp2 pfc igbt with low v ce(on) ? silicon carbide pfc diode ? antiparallel fred pt ? fast recovery ? integrated thermistor ? square rbsoa ? operating frequency 60 khz to 150 khz ? low internal inductances ? low switching loss ? compliant to rohs directive 2002/95/ec description vs-EMG050J60N is an integrated solution for dual stage pfc converter in a single package. the emipak2 package is easy to use thanks to the solderable terminals and provides improved thermal pe rformance thanks to the exposed substrate. the opti mized layout also helps to minimize stray parameters, allowing for better emi performance. notes ? absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. (1) v cc = 400 v, v ge = 15 v, l = 500 h, r g = 22 ? , t j = 150 c product summary v ces 600 v v ce(on) typical at i c = 50 a 1.8 v i c at t c = 98 c 50 a emipak2 absolute maximum ratings parameter symbol test conditions max. units maximum operating junction temperature t j 150 c storage temperature range t stg - 40 to 125 rms isolation voltage v isol t j = 25 c, all terminals shor ted, f = 50 hz, t = 1 s 3500 v pfc igbt q1 - q2 collector to em itter voltage v ces 600 v gate to emitter voltage v ges 20 v pulsed collector current i cm 150 a clamped inductive load current i lm (1) 150 a continuous coll ector current i c t c = 25 c 88 a t c = 80 c 60 power dissi pation p d t c = 25 c 338 w t c = 80 c 189 antiparallel diode d1 - d2 diode continuous forward current i f t c = 25 c 16 a t c = 80 c 11 single pulse forward current i fsm 10 ms sine or 6 ms rectangular pulse, t j = 25 c 80 a power dissi pation p d t c = 25 c 29 w t c = 80 c 16 pfc diode d3 - d4 repetitive peak reverse voltage v rrm 600 v diode continuous forward current i f t c = 25 c 25 a t c = 80 c 17 single pulse forward current i fsm 10 ms sine or 6 ms rectangular pulse, t j = 25 c 80 a power dissipation p d t c = 25 c 74 w t c = 80 c 41
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93495 2 revision: 18-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMG050J60N vishay semiconductors dual mode pfc, 60 a electrical specifications (t j = 25 c unless otherwise noted) parameter symbol test cond itions min. typ. max. units pfc igbt q1 - q2 collector to emitter breakdown voltage bv ces v ge = 0 v, i c = 500 a 600 - - v temperature coefficient of breakdown voltage ? bv ces / ? t j v ge = 0 v, i c = 500 a (25 c to 125 c) -0.1-v/c collector to em itter voltage v ce(on) v ge = 15 v, i c = 27 a - 1.44 1.75 v v ge = 15 v, i c = 50 a - 1.8 2.1 v ge = 15 v, i c = 27 a, t j = 125 c - 1.7 2.05 v ge = 15 v, i c = 50 a, t j = 125 c - 2.2 2.5 gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 2.9 3.9 5.3 temperature coefficient of threshold voltage ? v ge(th) / ? t j v ce = v ge , i c = 1 ma ( 25 c to 125 c) -- 10-mv/c forward transconductance g fe v ce = 20 v, i c = 50 a - 95 - s transfer characteristics v ge v ce = 20 v, i c = 50 a - 5.9 - v zero gate voltage collector current i ces v ge = 0 v, v ce = 600 v - 3 100 a v ge = 0 v, v ce = 600 v, t j = 125 c - 0.170 3 ma gate to emitter leakage current i ges v ge = 20 v, v ce = 0 v - 200 na antiparallel diode d1 - d2 forward voltage drop v f i f = 20 a - 2.19 2.4 v i f = 20 a, t j = 125 c - 1.93 2.15 pfc diode d3 - d4 cathode to anode breakdown voltage v br i r = 500 a 600 - - v reverse leakage current i rm v r = 600 v - 27 250 a v r = 600 v, t j = 125 c - 0.1 1 ma forward voltage drop v f i f = 10 a - 1.34 1.63 v i f = 10 a, t j = 125 c - 1.36 1.65 switching characteristics (t j = 25 c unless otherwise noted) parameter symbol test cond itions min. typ. max. units pfc igbt q1 - q2 (with freewheeling d3 - d4 pfc diode) total gate charge (turn-on) q g i c = 70 a v cc = 400 v v ge = 15 v - 480 720 nc gate to emitter charge (turn-on) q ge -82164 gate to collector charge (turn-on) q gc - 160 260 turn-on switching loss e on i c = 50 a v cc = 400 v v ge = 15 v r g = 4.7 ? l = 500 h t j = 25 c (1) -0.155- mj turn-off switching loss e off -0.471- total switching loss e tot -0.626- turn-on delay time t d(on) - 196 - ns rise time t r -29- turn-off delay time t d(off) - 220 - fall time t f -67-
document number: 93495 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 18-mar-11 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMG050J60N dual mode pfc, 60 a vishay semiconductors note (1) energy losses include tail and diode reverse recovery. turn-on switching loss e on i c = 50 a v cc = 400 v v ge = 15 v r g = 4.7 ? l = 500 h t j = 125 c (1) - 0.182 - mj turn-off switching loss e off - 0.615 - total switching loss e tot - 0.797 - turn-on delay time t d(on) -198- ns rise time t r -29- turn-off delay time t d(off) -227- fall time t f -75- input capacitance c ies v ge = 0 v v cc = 30 v f = 1 mhz -9500- pf output capacitance c oes -780- reverse transfer capacitance c res -116- reverse bias safe operating area rbsoa t j = 150 c, i c = 150 a v cc = 400 v, v p = 600 v r g = 22 ? , v ge = 15 v to 0 v fullsquare antiparallel diode d1 - d2 diode reverse recovery time t rr v r = 200 v i f = 20 a dl/dt = 500 a/s, t j = 25 c - 65 110 ns diode peak reverse current i rr -1115a diode reverse charge q rr - 350 825 nc diode reverse recovery time t rr v r = 200 v i f = 20 a dl/dt = 500 a/s, t j = 125 c - 83 130 ns diode peak reverse current i rr -1520a diode reverse charge q rr - 587 1300 nc pfc diode d3 - d4 diode reverse recovery time t rr v r = 200 v i f = 10 a dl/dt = 200 a/s, t j = 25 c -43- ns diode peak reverse current i rr -2.13- a diode reverse charge q rr - 45.5 - nc diode reverse recovery time t rr v r = 200 v i f = 10 a dl/dt = 200 a/s, t j = 125 c -44- ns diode peak reverse current i rr -2.14- a diode reverse charge q rr - 46.5 - nc thermistor electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units resistance r 25 4500 5000 5500 ? r 100 t j = 100 c 468 493 518 b value b t j = 25 c/t j = 50 c 3206 3375 3544 k switching characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93495 4 revision: 18-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMG050J60N vishay semiconductors dual mode pfc, 60 a fig. 1 - typical pfc igbt output characteristics fig. 2 - typical pfc igbt output characteristics fig. 3 - maximum dc pfc igbt collector current vs. case temperature per junction fig. 4 - typical pfc igbt co llector to emitter voltage vs. junction temperature thermal and mechanical specifications parameter symbol min. typ. max. units junction to case pfc igbt thermal resistance r thjc - - 0.37 c/w junction to case pfc diod e thermal resistance - - 1.69 junction to case ap diod e thermal resistance - - 4.29 case to sink, flat, greased surface (per module) r thcs -0.1- mounting torque (m4) -23nm weight -39- g i c (a) v ce (v) 0 1.5 3.0 1.0 2.5 0.5 2.0 3.5 0 93495_01 100 20 50 80 40 70 90 10 30 60 t j = 125 c t j = 150 c t j = 25 c v g e = 15 v i c (a) v ce (v) 0 1.5 2.5 3.0 3.5 0.5 1.0 2.0 4.0 0 93495_02 100 10 60 40 20 80 50 30 90 70 v g e = 8 v v g e = 10 v v g e = 12 v v g e = 15 v v g e = 18 v t j = 125 c allowable case temperature (c) i c - continuous collector current (a) 80 60 40 20 100 0 100 160 0 40 60 140 80 120 20 93495_03 dc v ce (v) t j (c) 10 160 60 110 0.5 1.0 1.5 2.0 2.5 3.0 3.5 93495_04 4.0 100 a 50 a 27 a v g e = 15 v
document number: 93495 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 18-mar-11 5 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMG050J60N dual mode pfc, 60 a vishay semiconductors fig. 5 - typical pfc igbt transfer characteristics fig. 6 - typical pfc igbt gate threshold voltage fig. 7 - igbt reverse bias soa t j = 150 c, v ge = 15 v, r g = 22 ? fig. 8 - typical pfc igbt zero gate voltage collector current fig. 9 - typical antiparallel diode forward characteristics fig. 10 - maximum dc antiparallel diode forward current vs. case temperatur e per junction i ce (a) v g e (v) 38 7 456 0 93495_05 100 30 40 10 50 60 20 80 90 70 t j = 25 c v ce = 20 v t j = 125 c v geth (v) i c (ma) 01.0 0.2 0.1 0.3 0.5 0.7 0.9 0.4 0.6 0.8 2.0 2.5 3.0 3.5 4.0 93495_06 4.5 t j = 25 c t j = 125 c i c (a) v ce (v) 1 10 100 1000 0.01 0.1 1 93495_07 1000 10 100 i ce s (ma) v ce s (v) 100 600 200 300 400 500 0.0001 93495_08 1 0.1 0.01 0.001 125 c 25 c i f (a) v fm (v) 04.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 93495_09 100 40 30 80 20 60 90 70 10 50 t j = 25 c t j = 125 c allowable case temperature (c) i f - continuous forwar d current (a) 10 6 4 214 12 816 18 0 100 160 0 40 60 140 80 120 20 93495_10
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93495 6 revision: 18-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMG050J60N vishay semiconductors dual mode pfc, 60 a fig. 11 - typical pfc diode forward characteristics fig. 12 - maximum dc pfc diode forward current vs. case temperature per junction fig. 13 - typical pfc diode reverse leakage current fig. 14 - typical pfc ig bt energy loss vs. i c (with freewheeling d3 - d4 pfc diode) t j = 125 c, v cc = 400 v, r g = 4.7 ? , v ge = 15 v, l = 500 h fig. 15 - typical pfc igbt switching time vs. i c (with freewheeling d3 - d4 pfc diode) t j = 125 c, v cc = 400 v, r g = 4.7 ? , v ge = 15 v, l = 500 h fig. 16 - typical antiparallel reverse recovery time vs. di f /dt v r = 200 v, i f = 20 a i f (a) v fm (v) 04.0 0.5 1.0 1.5 2.0 3.0 2.5 3.5 0 93495_11 50 40 30 20 10 t j = 25 c t j = 125 c allowable case temperature (c) i f - continuous forwar d current (a) 20 15 10 525 30 0 100 160 0 40 60 140 80 120 20 93495_12 dc i r (ma) v r (v) 100 200 300 400 500 600 0.00001 0.0001 0.001 0.01 0.1 1 93495_13 125 c 25 c energy (mj) i c (a) 020 6080 40 100 0 93495_14 1.8 0.6 1.2 1.0 0.8 1.4 1.6 0.4 0.2 e on e off s witching time (ns) i c (a) 020 80 60 40 100 10 93495_15 1000 100 t d(off) t d(on) t f t r t rr (ns) d i f / d t (a/s) 100 200 300 400 93495_16 500 50 150 130 70 90 110 125 c 25 c
document number: 93495 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 18-mar-11 7 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMG050J60N dual mode pfc, 60 a vishay semiconductors fig. 17 - typical antiparallel reverse recovery current vs. di f /dt v r = 200 v, i f = 20 a fig. 18 - typical antiparallel reverse recovery charge vs. di f /dt v r = 200 v, i f = 20 a fig. 19 - typical pfc diode reverse recovery time vs. di f /dt v r = 200 v, i f = 10 a fig. 20 - typical pfc diode reverse recovery current vs. di f /dt v r = 200 v, i f = 10 a fig. 21 - typical pfc diode reverse recovery charge vs. di f /dt v r = 200 v, i f = 10 a i rr (a) d i f / d t (a/s) 100 200 300 400 93495_17 500 3 17 9 13 5 11 15 7 125 c 25 c q rr (nc) d i f / d t (a/s) 100 200 300 400 93495_18 500 200 600 300 400 500 350 450 550 250 125 c 25 c t rr (ns) d i f / d t (a/s) 100 200 300 400 93495_19 500 10 70 40 60 30 20 50 125 c i rr (a) d i f / d t (a/s) 100 200 300 400 93495_20 500 0.5 4.5 3.5 2.5 1.5 125 c q rr (nc) d i f / d t (a/s) 100 200 400 300 93495_21 500 36 50 48 40 44 42 46 38
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93495 8 revision: 18-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMG050J60N vishay semiconductors dual mode pfc, 60 a fig. 22 - maximum thermal impedance z thjc characteristics (igbt) fig. 23 - maximum thermal impedance z thjc characteristics (antiparallel diode) fig. 24 - maximum thermal impedance z thjc characteristics (pfc diode) 0.001 0.01 0.1 1 0.00001 93495_22 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impe d ance junction to case (c/w) 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc 0.01 0.1 10 1 0.00001 93495_23 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impe d ance junction to case (c/w) 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc 0.01 0.1 10 1 0.00001 93495_24 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impe d ance junction to case (c/w) 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc
document number: 93495 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 18-mar-11 9 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMG050J60N dual mode pfc, 60 a vishay semiconductors ordering information table typical connection note ? please refer to lead assignment for correct pin configuration. this diagram shows electrical connections only. 1 - vishay semiconductors product 2 - package indicator (em = emipak2) 3 - circuit configuration (g = dual mode pfc) 4 - current rating (050 = 50 a) 5 - die technology (j = warp2 igbt) 6 - voltage rating (60 = 600 v) 7 - n = ultrafast device code 5 1 3 2 4 6 7 vs- em g 050 j 60 n
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93495 10 revision: 18-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-EMG050J60N vishay semiconductors dual mode pfc, 60 a circuit configuration package links to related documents dimensions www.vishay.com/doc?95436 11 33 24 23 th 27 28 6 5 2 1 17 35 14 15 30 d4 d2 d1 d3 q 2 q 1 36 13 17 6 30 36 35 33 24 23 27 28 13 14 5 11 15 21
document number: 95436 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 27-jan-11 1 emipak2 outline dimensions vishay semiconductors dimensions in millimeters 5.1 12.7 8.9 10.2 7.6 7.6 11.4 55 0.3 15.2 14 58 0.3 40.6 1.3 2.6 1.3 5.1 3.8 3.8 10.1 16.5 62 0.3 53 23.8 23 41.5 ? 5 ? 2 ? 4.3 ? 1 0.1 20.5 1 17 1 12 m4 ? 0.4 6.4 16.8 145 62 0.3 39 0.3 3 ref. 0.1 20.5 1 24.1 20.3 16.5 12.7 8.9 2.5 6.3 11.4 20.3 24.1 13.3 12.1 9.5 9.5 5.7 7 3.2 1.9 7 10.8 15.9 1.9 5.7 8.3 12.1 15.9 pin s po s ition with tolerance front view f f top view flat metal plate or with optional m4 thread detail a s cale 10:1 ceramic gap detail a side view
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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