stn4 stn4 stn4 stn4 346 346 346 346 n channel enhancement mode mosfet 6.8 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 346 20 10 . v1 description description description description stn4 39 2 is the n-channel logic enhancement mode power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as power management and other battery power ed circuits where high-side switching. pin pin pin pin configuration configuration configuration configuration sop-8 sop-8 sop-8 sop-8 part part part part marking marking marking marking sop-8 sop-8 sop-8 sop-8 y y y y year year year year code code code code a a a a process process process process code code code code feature feature feature feature ? 3 0v/ 6.8 a, r ds(on) = 26 m (typ.) @v gs = 10v ? 30v/ 6.0 a, r ds(on) = 34 m @v gs = 4.5 v ? 30v/ 5.6 a, r ds(on) = 40 m @v gs = 2 .5 v ? super high density cell design for extremely low r ds(on) ? exceptional on-resistance and maximum dc current capability ? sop-8 package design STN4346 STN4346 STN4346 STN4346 y y y y a a a a
stn4 stn4 stn4 stn4 346 346 346 346 n channel enhancement mode mosfet 6.8 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 346 20 10 . v1 absoulte absoulte absoulte absoulte maximum maximum maximum maximum ratings ratings ratings ratings (ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol typical typical typical typical unit unit unit unit drain-source voltage vdss 3 0 v gate-source voltage vgss 12 v continuous drain current (tj=150 ) ta=25 ta=70 id 6.8 5.6 a pulsed drain current idm 3 0 a continuous source current (diode conduction) is 2.3 a power dissipation ta=25 ta=70 pd 2. 5 1.6 w operation junction temperature tj -55/ 150 storgae temperature range tstg -55/150 thermal resistance-junction to ambient r ja 8 0 /w
stn4 stn4 stn4 stn4 346 346 346 346 n channel enhancement mode mosfet 6.8 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 346 20 10 . v1 electrical electrical electrical electrical characteristics characteristics characteristics characteristics ( ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol condition condition condition condition min min min min typ typ typ typ max max max max unit unit unit unit static static static static drain-source breakdown voltage v (br)dss v gs =0v,id=250ua 30 v gate threshold voltage v gs(th) v ds =v gs ,id= 2 50ua 1.0 3.0 v gate leakage current i gss v ds =0v,v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 24 v,v gs =0v 1 ua v ds = 24 v,v gs =0v t j = 8 5 100 on-state drain current id(on) v ds 5v,v gs =10v 25 a drain-source on- resistance r ds(on) v gs =10v,i d = 6.8 a v gs = 4.5 v,i d = 6.0 a v gs = 2.5 v,i d = 5.6 a 18 24 36 26 34 40 m forward transconductance gfs v ds =15v,i d = 6.2 a 13 s diode forward voltage v sd i s = 2.3 a,v gs =0v 0.8 1. 2 v dynamic dynamic dynamic dynamic total gate charge q g v ds =15v,v gs =10v i d 2 a 1 6 2 4 nc gate-source charge q gs 3 gate-drain charge q gd 2.5 turn-on time t d(on) tr v dd =15v,r l =15 i d = 1.0 a,v g s =10v r g = 6 15 20 ns 6 1 2 turn-off time t d(off) tf 10 20 40 80
stn4 stn4 stn4 stn4 346 346 346 346 n channel enhancement mode mosfet 6.8 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 346 20 10 . v1 typical typical typical typical characterictics characterictics characterictics characterictics
stn4 stn4 stn4 stn4 346 346 346 346 n channel enhancement mode mosfet 6.8 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 346 20 10 . v1 typical typical typical typical characterictics characterictics characterictics characterictics
stn4 stn4 stn4 stn4 346 346 346 346 n channel enhancement mode mosfet 6.8 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 346 20 10 . v1 package package package package outline outline outline outline sop-8p sop-8p sop-8p sop-8p
stn4 stn4 stn4 stn4 346 346 346 346 n channel enhancement mode mosfet 6.8 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 346 20 10 . v1
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